Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
| 参数名称 | 属性值 |
| 厂商名称 | Motorola ( NXP ) |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 0.2 A |
| 最大漏源导通电阻 | 3.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 25 pF |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 0.35 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| VN0300LRLRF | VN0300LRL1 | VN0300LRLRM | VN0300LZL1 | VN0300LRLRE | VN0300LRLRA | VN0300LRL | VN0300LRLRP | VN0300LRLRB | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| 最大漏源导通电阻 | 3.3 Ω | 3.3 Ω | 3.3 Ω | 3.3 Ω | 3.3 Ω | 1.2 Ω | 3.3 Ω | 3.3 Ω | 3.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF |
| JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Motorola ( NXP ) | - | - | - | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 包装说明 | - | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | - |
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