TCST1230
Vishay
Semiconductors
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emittig-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
Applications
D
Position sensor for shaft encoder
D
Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.
D
Limit switch for mechanical motions in VCR
D
Read/ write head position in data storage
equipment
15130
D
General purpose – wherever the space is limited
96 11969
Features
D
Gap 3 mm
D
Package height: 6 mm
D
Aperture 0.5 mm
D
Plastic polycarbonate housing
D
Current Transfer Ratio
(CTR) of typical 5%
A
E
C
C
Top view
Order Instruction
Ordering Code
TCST1230
Resolution (mm) / Aperture (mm)
0.4
/
0.5
Remarks
High density packing
Document Number 83765
Rev. A4, 08–Jun–99
www.vishay.com
1 (7)
TCST1230
Vishay
Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
6
60
3
100
100
Unit
V
mA
A
mW
°
C
t
p
≤
10
m
A
T
amb
≤
25
°
C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
CEO
V
ECO
I
C
P
V
T
j
Value
70
7
100
150
100
Unit
V
V
mA
mW
°
C
T
amb
≤
25
°
C
Coupler
Parameter
Total power dissipation
Operation temperature range
Storage temperature range
Soldering temperature
Test Conditions
T
amb
≤
25
°
C
Symbol
P
tot
T
amb
T
stg
T
sd
Value
250
–25 to +85
–40 to +100
260
Unit
mW
°
C
°
C
°
C
1.6 mm from case, t
≤
5 s
Electrical Characteristics
(T
amb
= 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I
F
= 60 mA
V
R
= 0, f = 1 MHz
Symbol
V
F
C
j
Min.
Typ.
1.25
50
Max.
1.5
Unit
V
pF
Output (Detector)
Parameter
Collector emittter voltage
Emitter collector voltage
Collector dark current
Test Conditions
I
C
= 1 mA
I
E
= 10
m
A
V
CE
= 25 V, I
F
= 0, E = 0
Symbol
V
CEO
V
ECO
I
CEO
Min.
70
7
Typ.
Max.
Unit
V
V
nA
10
100
Coupler
Parameter
Collector current
Collector emitter
saturation voltage
Test Conditions
V
CE
= 10 V, I
F
= 20 mA
I
F
= 20 mA, I
C
= 0.2 mA
Symbol
I
C
V
CEsat
Min.
0.5
Typ.
Max.
14
0.4
Unit
mA
V
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2 (7)
Document Number 83765
Rev. A4, 08–Jun–99
TCST1230
Vishay
Semiconductors
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Test Conditions
I
C
= 1 mA, V
CE
= 5 V, R
L
= 100 (
(see figure 1)
g
)
W
Symbol
t
on
t
off
Typ.
15.0
10.0
Unit
s
s
m
m
0
I
F
I
F
+5V
I
C
= 2 mA; adjusted through
input amplitude
I
F
96 11698
R
G
= 50
t
p
= 0.01
T
t
p
= 50 s
W
0
t
p
I
C
Channel I
Oscilloscope
R
L
1M
t
m
50
95 10890
W
100
W
Channel II
y
W
C
L
x
20 pF
100%
90%
Figure 1. Test circuit
10%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
pulse duration
delay time
rise time
turn-on time
t
s
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
t
f
t
storage time
fall time
turn-off time
Figure 2. Switching times
Document Number 83765
Rev. A4, 08–Jun–99
www.vishay.com
3 (7)
TCST1230
Vishay
Semiconductors
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
400
P
tot
– Total Power Dissipation ( mW )
10000
I
CEO
– Collector Dark Current,
with open Base ( nA )
V
CE
=25V
I
F
=0
300
Coupled device
200
Phototransistor
100
IR-diode
1000
100
10
0
0
95 11088
1
30
60
90
120
150
95 11090
0
25
50
75
100
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 3. Total Power Dissipation vs.
Ambient Temperature
1000.0
Figure 6. Collector Dark Current vs. Ambient Temperature
10
V
CE
=5V
I
C
– Collector Current ( mA )
I
F
– Forward Current ( mA )
100.0
1
10.0
0.1
1.0
0.01
0.1
0
96 11862
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
95 11083
0.1
1
10
100
I
F
– Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
CTR
rel
– Relative Current Transfer Ratio
2.0
Figure 7. Collector Current vs. Forward Current
10
I
C
– Collector Current ( mA )
V
CE
=5V
I
F
=20mA
1.5
I
F
=50mA
1
20mA
1.0
10mA
0.1
5mA
2mA
0.5
0
–25
95 11089
0.01
0
25
50
75
100
95 11084
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
CE
– Collector Emitter Voltage ( V )
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
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4 (7)
Figure 8. Collector Current vs. Collector Emitter Voltage
Document Number 83765
Rev. A4, 08–Jun–99
TCST1230
Vishay
Semiconductors
100
CTR – Current Transfer Ratio ( % )
I
Crel
– Relative Collector Current
V
CE
=5V
110
100
90
80
70
60
50
40
30
20
10
0
–0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
96 12006
0
A=0.5mm
10
s
1
0.1
0.1
95 11085
1
10
100
I
F
– Forward Current ( mA )
s – Displacement ( mm )
Figure 9. Current Transfer Ratio vs. Forward Current
t
on
/ t
off
– Turn on / Turn off Time (
m
s )
20
Non Saturated
Operation
V
S
=5V
R
L
=100
Figure 11. Relative Collector Current vs. Displacement
15
W
10
t
on
5
t
off
0
0
2
4
6
8
10
95 11086
I
C
– Collector Current ( mA )
Figure 10. Turn on / off Time vs. Collector Current
Document Number 83765
Rev. A4, 08–Jun–99
www.vishay.com
5 (7)
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