80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
TM
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
Cathode
Anode
RoHS
COMPLIANT
• Designed and qualified for industrial level
BENEFITS
PowerTab
TM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
50 ns
80 A
400 V
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and
storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 101 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
400
80
800
160
- 55 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
r
V
F
I
R
= 100 µA
I
F
= 80 A
Forward voltage
I
F
= 80 A, T
J
= 175 °C
I
F
= 80 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
-
-
-
-
TEST CONDITIONS
MIN.
400
-
-
TYP.
-
1.1
0.92
0.98
-
-
50
3.5
MAX.
-
1.3
1.08
1.15
50
2
-
-
µA
mA
pF
nH
V
UNITS
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 80 A
V
R
= 200 V
dI
F
/dt = 200 A/µs
MIN.
-
-
-
-
-
-
-
TYP.
50
87
151
9.3
17.2
405
1300
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device
Case style PowerTab
TM
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
-
0.18
-
MAX.
0.70
K/W
-
5.02
-
2.4
(20)
80EBU04
g
oz.
N·m
(lbf · in)
UNITS
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93025
Revision: 30-Oct-08
80EBU04
Ultrafast Soft Recovery Diode,
Vishay High Power Products
80 A FRED PT
TM
1000
Reverse Current - I
R
(µA)
1000
T
J
= 175˚C
100
125˚C
10
1
0.1
0.01
25˚C
Instantaneous Forward Current - I
F
(A)
100
T = 175˚C
J
J
J
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
T = 125˚C
T = 25˚C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Junction Capacitance - C
T
(pF)
T
J
= 25˚C
100
1
0
0.5
1
1.5
2
2.5
Forward Voltage Drop - V
FM
(V)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
0.1
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
TM
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
180
Allowable Case Temperature (°C)
160
140
120
100
Square wave (D = 0.50)
80% Rated Vr applied
200
IF = 160A
IF = 80A
IF = 40A
trr ( ns )
DC
150
80
see note (1)
100
60
0
20
40
60
80
100
120
50
100
di
F
/dt (A/µs )
Average Forward Current - I
F
(AV)
(A)
1000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
4500
140
RMS Limit
Average Power Loss ( Watts )
4000
3500
3000
Qrr ( nC )
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Average Forward Current - I
F
(AV)
(A)
Vr = 200V
Tj = 125˚C
Tj = 25˚C
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
2500
2000
1500
1000
500
0
100
IF = 160A
IF = 80A
IF = 40A
1000
di
F
/dt (A/µs )
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93025
Revision: 30-Oct-08
80EBU04
Ultrafast Soft Recovery Diode,
Vishay High Power Products
80 A FRED PT
TM
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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