CMOS STATIC RAM
64K (64K x 1-BIT)
Integrated Device Technology, Inc.
IDT7187S
IDT7187L
FEATURES:
• High speed (equal access and cycle time)
— Military: 25/35/45/55/70/85ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (L version
only)
• JEDEC standard high-density 22-pin ceramic DIP, 22-pin
leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• Separate data input and output
• Input and output directly TTL-compatible
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.
Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—I
SB
and I
SB1
. I
SB
provides low-power operation; I
SB1
provides ultra-low-power
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30µW.
Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
A
V
CC
A
A
A
A
A
ROW
SELECT
65,536-BIT
MEMORY ARRAY
GND
CS
DATA
IN
COLUMN I/O
DATA
OUT
WE
A
A
A
A
A
A
A
2986 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY TEMPERATURE RANGE
©1996
Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
AUGUST 1996
6.2
2986/7
1
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
PIN CONFIGURATIONS
INDEX
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
DATA
OUT
WE
GND
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
D22-1
17
16
15
14
13
12
GND
DATA
IN
V
CC
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
DATA
IN
CS
2986 drw 02
A
1
A
0
V
CC
A
15
2
3
4
5
6
7
8
9
10 11 12 13
1
22 21
20
19
18
A
2
A
3
A
4
A
5
A
6
A
7
DATA
OUT
L22-1
17
16
15
14
A
14
A
13
A
12
A
11
A
10
A
9
A
8
WE
CS
2986 drw 03
DIP
TOP VIEW
22-PIN LCC
TOP VIEW
PIN DESCRIPTIONS
Name
A
0
–A
15
Description
Address Inputs
Chip Select
Write Enable
Power
Data Input
Data Output
Ground
2986 tbl 01
TRUTH TABLE
(1)
Mode
Standby
Read
Write
CS
H
L
L
WE
X
H
L
Output
High-Z
D
OUT
High-Z
Power
Standby
Active
Active
2986 tbl 02
CS
WE
V
CC
DATA
IN
DATA
OUT
GND
NOTE:
1. H = V
IH
, L = V
IL
, X = don't care.
6.2
2
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Com’l.
Mil.
Unit
V
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output
Current
0 to +70
–55 to +125
CAPACITANCE
(T
A
= +25°C, F = 1.0MH
Z
)
Symbol
C
IN
C
OUT
°C
°C
°C
W
mA
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
T
A
T
BIAS
T
STG
P
T
I
OUT
NOTE:
2986 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
–55 to +125 –65 to +135
–55 to +125 –65 to +150
1.0
50
1.0
50
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
G
ND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
NOTE:
2986 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE:
2986 tbl 05
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5V
±
10%
5V
±
10%
2986 tbl 06
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%)
IDT7187S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
CC
= Max.,
V
IN
= GND to V
CC
MIL.
COM’L.
MIL.
COM’L.
Min.
—
—
—
—
—
2.4
Max.
10
5
10
5
0.5
0.4
—
IDT7187L
Min.
—
—
—
—
—
—
2.4
Max.
5
2
5
2
0.5
0.4
—
Unit
µA
µA
V
V
2986 tbl 07
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
6.2
3
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7187S25
7187L25
Symbol
I
CC1
Parameter
Operating Power
Supply Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = 0
(2)
Dynamic Operating
Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
Full Standby Power
Supply Current (CMOS
Level)
CS
≥
V
HC
,
V
CC
=Max., V
IN
≥
V
HC
or
V
IN
≤
V
LC
, f = 0
(2)
Power
S
L
S
L
S
L
S
L
Com’l.
Mil.
7187S35
7187L35
Com’l.
Mil.
7187S45
7187L45
Com’l.
Mil.
7187S55/70
7187L55/70
Com’l.
Mil.
7187S85
7187L85
Com’l.
Mil.
Unit
mA
—
—
—
—
—
—
—
—
105
85
130
110
55
50
20
1.5
—
—
—
—
—
—
—
—
105
85
120
100
50
40
20
1.5
—
—
—
—
—
—
—
—
105
85
120
95
50
35
20
1.5
—
—
—
—
—
—
—
—
105
85
120
90
50
30/28
20
1.5
—
—
—
—
—
—
—
—
105
85
120
90
50
28
20
1.5
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
MAX
address and data inputs are cycling at the maximum frequency of read cycles of 1/t
RC
. f = 0 means no input lines change.
2986 tbl 08
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) V
HC
= V
CC
- 0.2V, V
LC
= 0.2V
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR(3)
t
R(3)
|I
LI
|
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Condition
—
MIL.
COM’L.
Min.
2.0
—
—
0
t
RC(2)
—
2.0v
—
10
10
—
—
—
3.0V
—
15
15
—
—
—
2.0V
—
600
150
—
—
2
Max.
V
CC
@
3.0V
—
900
225
—
—
2
Unit
V
µA
ns
ns
µA
2986 tbl 09
CS
≥
V
HC
V
IN
≥
V
HC
or
≤
V
LC
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed, but not tested.
LOW V
CC
DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
4.5V
V
DR
≥2V
t
R
V
IH
V
DR
2986 drw 04
V
CC
4.5V
t
CDR
CS
V
IH
6.2
4
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2986 tbl 10
5V
480
Ω
DATA
OUT
255
Ω
30pF*
5V
480Ω
DATA
OUT
255Ω
5pF*
2986 drw 05
2986 drw 06
Figure 1. AC Test Load
*Includes scope and jig capacitances
Figure 2. AC Test Load
(for t
HZ
, t
LZ
, t
WZ
and t
OW
)
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
7187S25
7187L25
7187S35/45
(1)
7187L35/45
(1)
7187S55
(1)
7187L55
(1)
7187S70
(1)
7187L70
(1)
7187S85
(1)
7187L85
(1)
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
OH
t
LZ(2)
t
HZ(2)
t
PU(2)
t
PD(2)
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Output Selection to Output in Low-Z
Chip Deselect to Output in High-Z
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
25
—
—
5
5
—
0
—
—
25
25
—
—
12
—
20
35/45
—
—
5
5
—
0
—
—
35/45
35/45
—
—
17/20
—
30/35
55
—
—
5
5
—
0
—
—
55
55
—
—
30
—
35
70
—
—
5
5
—
0
—
—
70
70
—
—
30
—
35
85
—
—
5
5
—
0
—
—
85
85
—
—
40
—
40
ns
ns
ns
ns
ns
ns
ns
ns
2986 tbl 11
NOTES:
1. –55°C to +125°C temperature range only.
2. This parameter guaranteed but not tested.
6.2
5
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