1N4614D THRU 1N4627D
SILICON ZENER DIODE
LOW NOISE
1.8 VOLT THRU 6.2 VOLT
250mW, 1% TOLERANCE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4614D series
silicon Zener diode is designed for low leakage, low
current, and low noise applications. Higher voltage
devices are available in the 1N4099 series.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
MIN
V
1N4614D
1N4615D
1N4616D
1N4617D
1N4618D
1N4619D
1N4620D
1N4621D
1N4622D
1N4623D
1N4624D
1N4625D
1N4626D
1N4627D
1.782
1.980
2.178
2.376
2.673
2.970
3.267
3.564
3.861
4.257
4.653
5.049
5.544
6.138
NOM
V
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
MAX
V
1.818
2.020
2.222
2.424
2.727
3.030
3.333
3.636
3.939
4.343
4.747
5.151
5.656
6.262
TEST
CURRENT
IZT
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
Ω
1200
1250
1300
1400
1500
1600
1650
1700
1650
1600
1550
1500
1400
1200
MAXIMUM
REVERSE
CURRENT
IR
μA
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
@ VR
V
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
MAXIMUM
ZENER
CURRENT
IZM
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
4.0
5.0
TYPE
R3 (1-May 2013)
1N4614D THRU 1N4627D
SILICON ZENER DIODE
LOW NOISE
1.8 VOLT THRU 6.2 VOLT
250mW, 1% TOLERANCE
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (1-May 2013)
w w w. c e n t r a l s e m i . c o m