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MAPLAD30KP85CAE3/TR

产品描述Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon
产品类别分立半导体    二极管   
文件大小336KB,共4页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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MAPLAD30KP85CAE3/TR概述

Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon

MAPLAD30KP85CAE3/TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microchip(微芯科技)
包装说明S-PSSO-G1
Reach Compliance Codecompli
最大击穿电压104 V
最小击穿电压94.4 V
击穿电压标称值99.2 V
最大钳位电压137 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码S-PSSO-G1
JESD-609代码e3
最大非重复峰值反向功率耗散30000 W
元件数量1
端子数量1
封装主体材料PLASTIC/EPOXY
封装形状SQUARE
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
最大重复峰值反向电压85 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间40

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 30,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 14 to 400 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD30KP14A thru MPLAD30KP400CA, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA
o
Class 5: MPLAD30KP14A to 400CA (short distance)
o
Class 5: MPLAD30KP14A to 220CA (long distance)
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3: MPLAD30KP14A to 400CA
o
Class 4: MPLAD30KP14A to 220CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: MPLAD30KP10A to 400CA
o
Class 3: MPLAD30KP14A to 220CA
o
Class 4: MPLAD30KP14A to 110CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 30,000 watts at 10/1000 μs (also see Figures 1 and 2)
with impulse repetition rate (duty factor) of 0.05 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 0.5 ºC/W junction to case or 50ºC/W junction to ambient when mounted
on FR4 PC board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 250 watts at T
C
= 25 °C or 2.5 watts at T
A
= 25 °C when
mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional
devices only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01005 Rev D, November 2010
High Reliability Product Group
Page 1 of 4
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