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MAPLAD15KP20AE3/TR

产品描述Trans Voltage Suppressor Diode, 15000W, 20V V(RWM), Unidirectional, 1 Element, Silicon
产品类别分立半导体    二极管   
文件大小291KB,共4页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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MAPLAD15KP20AE3/TR概述

Trans Voltage Suppressor Diode, 15000W, 20V V(RWM), Unidirectional, 1 Element, Silicon

MAPLAD15KP20AE3/TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microchip(微芯科技)
包装说明R-PSSO-G1
Reach Compliance Codecompli
其他特性HIGH RELIABILITY
最大击穿电压24.5 V
最小击穿电压22.2 V
击穿电压标称值23.35 V
外壳连接CATHODE
最大钳位电压32.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PSSO-G1
最大非重复峰值反向功率耗散15000 W
元件数量1
端子数量1
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压20 V
表面贴装YES
技术AVALANCHE
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 15,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 7.0 to 200 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD15KP7.0A thru MPLAD15KP200CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2,3: MPLAD15KP7.0A to 200CA
o
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):
o
Level 4: MPLAD15KP7.0A to 200CA
o
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):
o
Level 4: MPLAD15KP7.0A to 28CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with
impulse repetition rate (duty factor) of 0.05% or less
t
clamping
(0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC
board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C
if mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)
Solder temperatures: 260 °C for 10 s (maximum)
RF01004 Rev C, November 2010
High Reliability Product Group
Page 1 of 4
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