isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in high-voltage, high-speed switching of
inductive circuits where fall time and RBSOA are critical.
they are particularly well-suited for line-operated switch-
mode applications such as:
·Switching
Regulators
·High
resolution deflection circuits
·Inverters
·Motor
drives
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
i
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Base Current-Peak
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
450
6
5
10
4
8
80
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
MJE16004
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
isc Website
：
www.iscsemi.com
1
isc & iscsemi
is registered trademark
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CBO
I
CEO
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 30mA; I
B
= 0
I
C
= 1.5A ;I
B
= 0.15A
I
C
= 3A ;I
B
= 0.3A
T
C
= 100℃
I
C
= 3A ;I
B
= 0.3A
T
C
= 100℃
V
CB
= 850V
;
I
E
= 0
T
C
= 100℃
V
CE
= 450V
;
T
C
= 100℃
V
EB
= 6V; I
C
= 0
I
C
= 5A; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
= 1.0kHz
7
MIN
450
MJE16004
TYP.
MAX
UNIT
V
1.0
2.5
2.5
1.5
1.5
0.25
1.5
2.5
1.0
V
V
V
mA
mA
mA
200
pF
Switching Times; Resistive Load
t
d
t
r
t
s
t
f
Storage Time
Fall Time
Storage Time
Fall Time
I
C
= 3A; V
CC
= 250V;
I
B1
= 0.3A;I
B2
= 0.6A; R
B2
= 8Ω;
PW= 30μs; Duty Cycle≤2%
0.1
0.3
2.7
0.35
μs
μs
μs
μs
isc Website
：
www.iscsemi.com
2
isc & iscsemi
is registered trademark
isc
Silicon NPN Power Transistor
MJE16004
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Website
：
www.iscsemi.com
3
isc & iscsemi
is registered trademark
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
