Preliminary
Datasheet
RJK4502DPD
450V - 2.8A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 3
typ. (at I
D
= 1.4 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0865EJ0100
Rev.1.00
Aug 08, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
S
D
G
12
3
Gate
Drain
Source
Drain
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
2.
4.
Limited by Tch max.
Pulse width limited by safe operating area.
STch = 25C, Tch
150C
Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1
I
D(pulse) Note2
I
DR Note1
I
DR(pulse) Note2
I
AP Note3
Pch
Note4
ch-c
Tch
Tstg
Value
450
30
2.8
5.6
2.8
5.6
2.8
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 1 of 6
RJK4502DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
450
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.00
163
22
2.6
11
12
21
20
6.4
1.5
3.2
0.9
200
Max
—
1
0.1
4.5
3.85
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 450 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.4 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 1.4 A
V
GS
= 10 V
R
L
= 160
Rg = 10
V
DD
= 360 V
V
GS
= 10 V
I
D
= 2.8 A
I
F
= 2.8 A, V
GS
= 0
Note5
I
F
= 2.8 A, V
GS
= 0
V
DD
= 360 V
di
F
/dt = 100 A/s
5. Pulse test
6. Since this device is equipped with high voltage FET chip (V
DSS
450
V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
7. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 2 of 6
RJK4502DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
4
Ta = 25°C
Pulse Test
7V
10 V
6.2 V
5.8 V
2
5.4 V
1
Typical Output Characteristics
I
D
(A)
10
PW
=
10
μ
s
I
D
(A)
Drain Current
3
1
10
Drain Current
0
μ
s
0.1
0.01
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
1000
V
GS
= 5 V
0
0
4
8
12
16
20
0.001
0.1
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
DS
= 10 V
Pulse Test
1
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
100
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
(A)
Drain Current
0.1
Ta = 75°C
25°C
−25°C
10
0.01
0.001
0
2
4
6
8
10
1
0.1
1
10
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
12
10
8
I
D
= 2.8 A
6
4
1.4 A
2
0
−25
0.7 A
V
GS
= 10 V
Ta = 25°C
Pulse Test
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 3 of 6
RJK4502DPD
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
100
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 2.8 A
Ta = 25°C
Capacitance C (pF)
600
V
DS
12
Drain to Source Voltage
400
10
Coss
V
DD
= 100 V
200 V 8
360 V
4
200
Crss
1
0
50
100
150
200
250
V
DD
= 360 V
220 V
100 V
2
4
6
8
0
0
0
10
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
6
8
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
5
4
3
2
1
0
0
0.4
0.8
V
GS
= 0
Ta = 25°C
Pulse Test
1.2
1.6
Gate to Source Cutoff Voltage
V
GS(off)
(V)
6
I
D
= 10 mA
4
1 mA
2
V
DS
= 10 V
0
−25
0
25
50
75
100 125 150
Reverse Drain Current
0.1 mA
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
800
V
GS
16
RJK4502DPD
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.02
0.05
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
10 m
100 m
1
10
100
D=
PW
T
0.01
1shot pulse
0.01
100
μ
1m
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 225 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 5 of 6
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