DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µ
PA1552B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The
µ
PA1552B is N-channel Power MOS FET Array
that built in 4 circuits designed, for solenoid, motor and
lamp driver.
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
10
4.0
FEATURES
• Large Current and Low On-state Resistance
I
D(DC)
=
±5.0
A
R
DS(on)1
≤
0.18
Ω
MAX. (V
GS
= 10 V, I
D
= 3 A)
R
DS(on)2
≤
0.24
Ω
MAX. (V
GS
= 4 V, I
D
= 3 A)
• Low Input Capacitance Ciss = 200 pF TYP.
1 2 3 4 5 6 7 8 9 10
1.4 0.6±0.1
2.5
• 4 V driving is possible
2.54
1.4
0.5±0.1
ORDERING INFORMATION
Type Number
Package
10 Pin SIP
2
3
CONNECTION DIAGRAM
5
7
9
µ
PA1552BH
4
6
8
10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
V
DSS
Note 1
V
GSS
Note 2
I
D(DC)
I
D(pulse)
Note 3
P
T1
Note 4
P
T2
Note 5
T
CH
T
stg
I
AS
Note 6
E
AS
Note 6
60
±20
±5.0
±20
28
3.5
150
–55 to +150
5.0
2.5
V
V
A/unit
A/unit
W
W
˚
C
˚
C
A
mJ
1
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
Notes 1.
V
GS
= 0
3.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
5.
4 Circuits, T
A
= 25 ˚C
2.
V
DS
= 0
4.
4 Circuits, T
C
= 25 ˚C
6.
Starting T
CH
= 25 ˚C, V
DD
= 30 V, V
GS
= 20 V
→
0,
R
G
= 25
Ω,
L = 100
µ
H
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10599EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
10 MIN.
1995
µ
PA1552B
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain Leakage Current
Gate Leakage Current
Gate Cutoff Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| Y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 5.0 A, V
GS
= 0
I
F
= 5.0 A, V
GS
= 0, di/dt = 50 A/
µ
s
V
GS
= 10 V, I
D
= 5.0 A, V
DD
= 48 V
I
D
= 3.0 A, V
GS
= 10 V, V
DD
· ·
30 V,
=
R
L
= 10
Ω
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 4.0 V, I
D
= 3.0 A
V
DS
= 10 V, V
GS
= 0, f = 1.0 MHz
1.0
2.4
0.09
0.12
200
150
55
20
100
670
310
13
2
4.7
1.0
280
820
0.18
0.24
MIN.
TYP.
MAX.
10
±10
2.0
UNIT
µ
A
µ
A
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1
Avalanche Capability
Test Circuit 2
Switching Time
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20 V
→
0
50
Ω
L
D.U.T.
R
L
V
DD
PG.
V
GS
R
G
R
G
= 10
Ω
Wave Form
V
GS
0
I
D
D
Wave Form
10 %
90 %
V
GS (on)
90 %
V
DD
90 %
I
D
10 %
t
d (off)
t
off
t
f
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1
µ
s
Duty Cycle
≤
1 %
I
0
10 %
t
d (on)
t
on
t
r
Starting T
CH
Test Circuit 3
Gate Charge
D.U.T.
I
G
= 2 mA
PG.
R
L
50
Ω
V
DD
2
µ
PA1552B
CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
6
P
T
- Total Power Dissipation - W
µ
PA1552BH
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
P
T
- Total Power Dissipation - W
NEC
,,
,,
,,,
5
4
3
2
1
Lead
Print
Circuit
Boad
Under same
dissipation in
each circuit
4 Circuits operation
3 Circuits operation
2 Circuits operation
1 Circuit operation
Under same
dissipation in
each circuit
4 Circuits operation
3 Circuits operation
2 Circuits operation
1 Circuit operation
20
10
0
50
100
150
T
C
is grease
Temperature on back surface
0
50
100
T
C
- Case Temperature - ˚C
150
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
I
D
- Drain Current - A
10
(o
DS
n)
i
Lim
ted
(V
GS
=1
0
I
D(pulse)
V)
100
80
60
40
20
P
W
=
1
I
D(DC)
10
0
m
50
10
s
s
m
s
s
m
R
m
1
DC
0.1
0.1
T
C
= 25 ˚C
Single Pulse
1
10
100
0
20
40
60
80
100 120 140
160
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
V
GS
= 10 V
I
D
- Drain Current - A
T
C
- Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
V
GS
= 20 V
10 V
Pulsed
I
D
- Drain Current - A
10
V
GS
= 4 V
10
1.0
T
A
= 125 ˚C
75 ˚C
25 ˚C
-25 ˚C
0.1
0
2
4
6
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
3
µ
PA1552B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
Single Pulse,
For each Circuit
R
th(CH-A)
4Circuits
3Circuits
2Circuits
1Circuit
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
10
R
th(CH-C)
1.0
0.1
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - sec
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
10
T
A
= -25 ˚C
25 ˚C
75 ˚C
125 ˚C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
Pulsed
200
I
D
= 5 A
3A
1A
1.0
100
0.1
0.1
1.0
I
D
- Drain Current - A
10
0
10
V
GS
- Gate to Source Voltage - V
20
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
V
GS(off)
- Gate to Source Cutoff Voltage - V
2
V
DS
= 10 V
I
D
= 1 mA
200
V
GS
= 4 V
1
100
V
GS
= 10 V
0
1.0
I
D
- Drain Current - A
10
0
–50
0
50
100
150
T
CH
- Channel Temperature - ˚C
4
µ
PA1552B
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
I
SD
- Diode Forward Current - A
200
V
GS
= 4 V
10
150
1.0
V
GS
= 10 V
100
V
GS
= 10 V
V
GS
= 0
0.1
50
I
D
= 3 A
0
50
100
150
0
- 50
0.01
0
0.5
1.0
1.5
T
CH
- Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1 MHz
t
d(off)
t
f
C
iss
100
C
oss
100
t
r
C
rss
t
d(on)
10
0.1
1.0
10
.
V
DD
= 30 V
.
V
GS
= 10 V
R
G
= 10
Ω
10
0.1
1
10
100
100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
V
DD
= 12 V
30 V
48 V
10
8
6
20
4
2
0
I
D
= 5 A
V
DS
- Drain to Source Voltage - V
di/dt = 50 A/
µ
s
V
GS
= 0
40
100
V
DS
0
2
4
6
8
10
12
14
16
10
0.1
1.0
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
5
V
GS
- Gate to Source Voltage - V
t
rr
- Reverse Recovery time - ns
V
GS
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