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JANSR2N5154L

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小222KB,共3页
制造商Cobham PLC
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JANSR2N5154L概述

Small Signal Bipolar Transistor

JANSR2N5154L规格参数

参数名称属性值
厂商名称Cobham PLC
Reach Compliance Codeunknow
认证状态Not Qualified

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NPN Power Silicon Transistor
2N5152, 2N5152L & 2N5154, 2N5154L
Features
Available in commercial, JAN, JANTX, JANTXV, JANS
and JANSR 100K rads (Si) per MIL-PRF-19500/544
TO-5 Package: 2N5152L, 2N5154L
TO-39 (TO-205AD) Package: 2N5152, 2N5154
Maximum Ratings (TC = +25°C unless otherwise noted)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25 °C
@ TC = +25 °C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
R
θJC
Value
80
100
5.5
2.0
1.0
10
-65 to +200
10
Units
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
Operating & Storage Temperature Range
Thermal Resistance, Junction-to-Case
Electrical Characteristics (TA = +25°C unless otherwise noted)
OFF Characteristics
Collector - Emitter Breakdown Voltage
IC = 100 mAdc, IB = 0
Emitter - Base Cutoff Current
VEB = 4.0 Vdc, IC = 0
VEB = 5.5 Vdc, IC = 0
Collector - Emitter Cutoff Current
VCE = 60 Vdc, VBE = 0
VCE = 100 Vdc, VBE = 0
Collector - Emitter Cutoff Current
VCE = 40 Vdc, IB = 0
Symbol
V(BR)CEO
IEBO
Mimimum
80
---
Maximum
---
1.0
1.0
1.0
1.0
50
Units
Vdc
μAdc
mAdc
μAdc
mAdc
μAdc
ICES
---
ICEO
---
Revision Date: 4/15/2014
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