SM4804DSK
®
Dual N-Channel Enhancement Mode MOSFET
Features
·
30V/8A,
R
DS(ON)
= 17mW(max.) @ V
GS
= 10V
R
DS(ON)
= 23mW(max.) @ V
GS
= 4.5V
Pin Description
D1
D1
D2
D2
·
·
·
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS Tested
S1
G1
S2
G2
Top View of SOP-8
D1 D1
D2 D2
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1
S2
N-Channel MOSFET
Ordering and Marking Information
SM4804DS
Assembly Material
Handling Code
Temperature Range
Package Code
SM4804DS K :
4804
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
1
www.sinopowersemi.com
SM4804DSK
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
Da
I
DMa
I
Sa
I
ASb
E
ASb
T
J
T
STG
P
Da
R
qJA
a
®
(T
A
= 25°C Unless Otherwise Noted)
Rating
30
±20
T
A
=25°C
T
A
=70°C
8
6.5
40
1
9
20
150
-55 to 150
T
A
=25°C
T
A
=70°C
t
£
10s
Steady State
Steady State
1.7
1.08
48
74
32
°C/W
mJ
°C
W
A
Unit
V
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
=10V)
300ms Pulsed Drain Current (V
GS
=10V)
Diode Continuous Forward Current
Avalanche Current (Single Pulse)
Avalanche Energy, Single Pulse (L=0.5mH)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Lead
2
R
qJL
Note a：Surface Mounted on 1in pad area, t
£
10sec. Maximum Power dissipation is calculated from R
q
JA
(worst)
=62.5
°C/W
under t
£
10s.
Note b：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
D SS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
SM4804DSK
Min.
30
-
-
1.3
-
-
-
-
-
-
-
Typ.
-
-
-
1.9
-
13.5
18
32
0.7
15.5
6.5
Max.
-
1
30
2.5
±100
17
23
-
1.1
-
-
Unit
V
GS
=0V, I
D S
=250mA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250mA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=8A
V
GS
=4.5V, I
DS
=8A
V
DS
=5V, I
DS
=8A
I
SD
=1A, V
GS
=0V
I
SD
=8A, dl
SD
/dt=100A/ms
2
V
mA
V
nA
mW
S
V
ns
nC
R
D S(ON) a
Drain-Source On-state Resistance
Gfs
V
SDa
t
rr
b
b
Forward Transconductance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Diode Characteristics
Q
rr
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
www.sinopowersemi.com
SM4804DSK
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C Unless Otherwise Noted)
SM4804DSK
Min.
1.3
-
-
-
-
V
DD
=15V, R
L
=15W,
I
DS
=1A, V
GEN
=10V,
R
G
=6W
-
-
-
V
DS
=15V, V
GS
=10V,
I
DS
=8A
V
DS
=15V, V
GS
=4.5V,
I
DS
=8A
Typ.
1.7
580
95
57
5.9
10
17
4
Max.
2.3
-
-
-
10
17
35
9
®
Test Conditions
Unit
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
W
pF
ns
Gate Charge Characteristics
b
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
10.2
5.3
0.78
1.7
2.2
14
-
-
-
-
nC
Note a : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
3
www.sinopowersemi.com
SM4804DSK
Typical Operating Characteristics
Power Dissipation
2.0
10
®
Drain Current
1.6
8
1.2
I
D
- Drain Current (A)
P
tot
- Power (W)
6
0.8
4
0.4
T
A
=25 C
0
20
40
60
80
100 120 140 160
o
2
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
0.0
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
300
100
Rd
s(
on
)L
im
it
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
I
D
- Drain Current (A)
10
0.1
0.02
0.01
0.05
300
m
s
1
1ms
10ms
100ms
0.01
Single Pulse
0.1
1s
DC
T
A
=25 C
o
0.01
0.01
0.1
1
10
100 300
1E-3
1E-4
Mounted on 1in pad
o
R
q
JA
:48 C/W
2
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
4
www.sinopowersemi.com
SM4804DSK
Typical Operating Characteristics (Cont.)
Output Characteristics
40
35
30
V
GS
=4,4.5,5,6,7,8,9,10V
26
24
®
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mW)
22
20
18
16
14
12
10
8
0
8
16
24
32
40
V
GS
=10V
V
GS
=4.5V
I
D
- Drain Current (A)
25
20
15
10
5
0
0.0
3.5V
3V
2.5V
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
40
35
I
DS
=8A
1.6
Gate Threshold Voltage
I
DS
=250
m
A
1.4
R
DS(ON)
- On - Resistance (mW)
Normalized Threshold Voltage
30
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
5
www.sinopowersemi.com
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