2N5793, 2N5793A, 2N5794
2N5794A, 2N5794AU, 2N5794U
NPN Dual Silicon Transistors
Rev. V1
Features
•
Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-
19500/495
•
TO-78 and U package types
•
Radiation Tolerant Levels M, D, P, L, and R
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Off Characteristics
Collector
-
Emitter Breakdown Voltage
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
On Characteristics
1
2N5793, A
V
CE
= 10 V dc; I
C
= 0.1 mA dc
V
CE
= 10 V dc; I
C
= 1.0 mA dc
V
CE
= 10 V dc; I
C
= 10 mA dc
V
CE
= 10 V dc; I
C
= 150 mA dc
V
CE
= 10 V dc; I
C
= 300 mA dc
V
CE
= 1.0 V dc; I
C
= 150 mA dc
2N5794, A, U, AU
V
CE
= 10 V dc; I
C
= 0.1 mA dc
V
CE
= 10 V dc; I
C
= 1.0 mA dc
V
CE
= 10 V dc; I
C
= 10 mA dc
V
CE
= 10 V dc; I
C
= 150 mA dc
V
CE
= 10 V dc; I
C
= 300 mA dc
V
CE
= 1.0 V dc; I
C
= 150 mA dc
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
20
25
35
40
25
20
h
FE
35
50
75
100
40
50
I
C
= 10 mA dc
V
CB
= 75 V dc
V
CB
= 50 V dc
V
EB
= 6.0 V dc
V
EB
= 4.0 V dc
V
(BR)CEO
V dc
I
CBO1
I
CBO2
I
EBO1
I
EBO2
µA dc
nA dc
µA dc
nA dc
40
—
—
—
10
10
10
10
Test Conditions
Symbol Units
Min.
Max.
120
Forward Current Transfer Ratio
300
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5793A, 2N5794A, 2N5794AU)
I
C
= 150 mA dc, I
B
= 15 mA dc
I
C
= 300 mA dc, I
B
= 30 mA dc
I
C
= 150 mA dc, I
B
= 15 mA dc
I
C
= 300 mA dc, I
B
= 30 mA dc
V
CE(SAT)1
Vdc
V
CE(SAT)2
V
BE(SAT)1
Vdc
V
BE(SAT)2
Vdc
—
0.6
—
0.3
0.9
1.2
1.8
V
CE
= 10 V dc; I
C
= 1 mA dc
h
FE2-1
—––
h
FE2-2
0.9
1.11
1.
Pulse Test: Pulse Width = 300
μs,
Duty Cycle ≤2.0%
.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5793, 2N5793A, 2N5794
2N5794A, 2N5794AU, 2N5794U
NPN Dual Silicon Transistors
Rev. V1
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5793A, 2N5794A, 2N5794AU)
Test Conditions
V
CE
= 10 V dc; I
C
= 10 mA dc
Symbol Units
h
FE3-1
—––
h
FE3-2
|V
BE1-
V
BE2
|
Min.
0.9
Max.
1.11
Absolute Value of Base Emitter-Voltage
Differential
(2N5793A, 2N5794A, 2N5794AU)
V
CE
= 10 V dc; I
C
= 1 mA dc
mV dc
—
10
Collector-Base Cutoff Current
T
A
= +150
o
C
V
CB
= 50 V dc
T
A
=
-55
o
C
V
CE
= 10 V dc; I
C
= 150 mA dc
2N5793, 2N5793A
2N5794, 2N5794U
2N5794A, 2N5794AU
I
CBO3
µA dc
—
10
Forward Current Transfer Ratio
h
FE7
16
40
40
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open-
Circuited)
Switching Characteristics
Turn-On Time (saturated)
Turn-Off Time (saturated)
V
CC
= 30 V dc; I
C
= 150 mA dc; I
B1
= 15 mA dc;
V
BE(OFF)
= 0.5 V dc
V
CC
= 30 Vdc; I
C
= 150 mA dc; I
B1
= I
B2
= 15 mA dc
I
C
= 20 mA dc; V
CE
= 20 V dc; f = 100 MHz
V
CB
= 10 V dc; I
E
= 0 mA; 100 kHz ≤ f ≤ 1 MHz
V
EB
= 0.5 V dc; I
C
= 0; 100 kHz ≤ f ≤ 1 MHz
| h
FE
|
C
obo
C
ibo
-
pF
pF
2.0
—
—
10
8.0
33
t
on
t
off
ns
ns
—
—
45
310
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5793, 2N5793A, 2N5794
2N5794A, 2N5794AU, 2N5794U
NPN Dual Silicon Transistors
Rev. V1
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
One Section
Both Sections
Operating & Storage Temperature Range
Thermal Characteristics
Types
R
ᶱJA
R
ᶱJA
One Section Both Sections
o
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
(1)
Value
40 V dc
75 V dc
6.0 V dc
600 mA dc
500 mW
600 mW
-65°C
to +175°C
T
J
, T
STG
R
ᶱJSP
One Section
o
R
ᶱJSP
R
ᶱJPCB
R
ᶱJPCB
Both Sections One Section Both Sections
o
2N5793, 2N5794
2N5793A, 2N5794A
2N5794U, 2N5794AU
C/W
(2)
350
350
o
C/W
(2)
290
290
C/W
(2)
C/W
(2)
o
C/W
(2)
o
C/W
(2)
110
110
90
90
350
350
290
290
(1) For T
A
> +25
o
C, derate linearly 2.86 mW/
o
C one section, 3.43 mW/
o
C both sections
(2) For the thermal resistance curves see figures 4, 5 and 6 of MIL-PRF-19500/495
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5793, 2N5793A, 2N5794
2N5794A, 2N5794AU, 2N5794U
NPN Dual Silicon Transistors
Rev. V1
Outline Drawing
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5793, 2N5793A, 2N5794
2N5794A, 2N5794AU, 2N5794U
NPN Dual Silicon Transistors
Rev. V1
Outline Drawing
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
