gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
•
5.5 A, 20 V.
R
DS(ON)
= 0.021
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.035
Ω
@ V
GS
= 2.5 V
•
Extended V
GSS
range (±12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±12
(Note 1a)
Units
V
V
A
W
°C
5.5
30
1.0
0.6
-55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°C/W
Package Marking and Ordering Information
Device Marking
6966
2001
Fairchild Semiconductor Corporation
Device
SI6966DQ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
SI6966DQ Rev A(W)
SI6966DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 16 V,
V
GS
= 12 V,
V
GS
= –12 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
I
D
= 5.5 A
V
GS
= 4.5 V,
I
D
= 4.2 A
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
= 5.5A, T
J
=125°C
V
GS
= 4.5 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 5.5 A
0.6
0.8
–3.2
17
24
23
1.5
V
mV/°C
21
35
34
mΩ
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
30
26
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
1082
277
130
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
8
8
24
8
20
27
38
16
17
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 5.5 A,
12
2
3
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 0.83 A
(Note 2)
0.83
0.7
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208
°C/W
(steady state) when mounted on a minimum copper pad on FR-4.
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