Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Features
•
–5.5 A, –20 V.
R
DS(ON)
= 33 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 43 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 60 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed.
•
High performance trench technology for extremely
low R
DS(ON)
D
D
S
1
2
G
6
5
4
SuperSOT
TM
-6
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–5.5
–20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.447
Device
Si3447DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si3447DV Rev A (W)
Si3447DV
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= –8 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–12
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
= –4.5 V,
V
DS
= –5 V,
I
D
= –5.5 A
I
D
= –4.8 A
I
D
= –4.0 A
V
DS
= –5 V
I
D
= –3.5 A
–0.4
–0.7
3
24
30
42
–1.5
V
mV/°C
33
43
60
mΩ
I
D(on)
g
FS
–20
23
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
1926
530
185
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
13
11
90
45
23
20
144
72
30
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –3.5 A,
19
4
7.5
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–1.3
–0.7
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a.
b.
78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Si3447DV Rev A(W)
Si3447DV
Typical Characteristics
20
V
GS
= -4.5V
-2.5V
15
-1.8V
10
-2.0V
3
V
GS
= -1.5V
2.5
2
-1.8V
1.5
-1.5V
-2.0V
-2.5V
1
-4.5V
5
0
0
1
2
3
0.5
0
5
10
-I
D
, DRAIN CURRENT (A)
15
20
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
o
I
D
= -5.5A
V
GS
= -4.5V
0.09
I
D
= -2.8 A
0.06
T
A
= 125 C
0.03
T
A
= 25 C
o
o
0
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
20
V
DS
= -5V
15
125 C
10
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
25
o
C
-55
o
C
T
A
= -55 C
o
25 C
o
-I
S
, REVERSE DRAIN CURRENT (A)
0.1
0.01
5
0.001
0
0
0.5
1
1.5
2
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3447DV Rev A(W)
Si3447DV
Typical Characteristics
5
I
D
= -5.5A
4
-15V
3
V
DS
= -5V
-10V
3500
3000
2500
C
ISS
2000
1500
1000
f = 1MHz
V
GS
= 0 V
2
1
500
C
OSS
C
RSS
0
0
5
10
15
20
25
0
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
10ms
100ms
1
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156 C/W
T
A
= 25 C
0.01
0.1
1
10
100
0
o
o
Figure 8. Capacitance Characteristics.
5
100
µ
s
1ms
POWER (W)
4
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
= 25
o
C
3
1s
DC
2
0.1
1
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
D = 0 .5
R
θ
J A
( t) = r ( t) + R
θ
J A
R
θ
J A
= 1 5 6 ° C /W
THERMAL RESISTANCE
0 .1
0 .2
0 .1
0 .0 5
P (p k )
t
1
T
J
- T
A
= P * R
θ
J A
( t)
t
2
D u ty C y c le , D = t
1
/ t
2
0 .0 1
0 .0 2
0 .0 1
S IN G L E P U L S E
0 .0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
t
1
, T IM E ( s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3447DV Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
1、引言 汽车污染是当前人们最为关心和急需解决的重要课题之一。作为汽车排气污染物的检测的重要方法,简易瞬态工况法（VMAS法，IG法）可以统计排放总质量，监控车辆的真实排放情况，设备成本不高，测量比较准确，与新车认证检测结果具有相关性，可以检测NO相关因子等一系列优点，成为人们研究的热点。VMAS（Vehicle Mass Analysis System）检测方法在美国和欧洲都有很好的应用基础，...[详细]
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