SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1004MB/D
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
•
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•
Internal Input Matching for Broadband Operation
MRF1004MB
4.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
20
50
3.5
250
7.0
40
–65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
25
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 5.0 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 5.0 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 1.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 35 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
20
50
50
3.5
—
—
—
—
—
—
—
—
—
—
0.5
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 75 mAdc, V
CE
= 5.0 Vdc)
h
FE
10
—
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 8
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 35 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
3.3
5.0
pF
FUNCTIONAL TESTS
(Pulse Width = 10
µs,
Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(V
CC
= 35 Vdc, P
out
= 4.0 W pk, f = 1090 MHz)
Collector Efficiency
(V
CC
= 35 Vdc, P
out
= 4.0 W pk, f = 1090 MHz)
Load Mismatch
(V
CC
= 35 Vdc, P
out
= 4.0 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
G
PB
η
ψ
No Degradation in Power Output
10
40
11
45
—
—
dB
dB
C1
L2
C2
C3
+
-
+
V
CC
= 35 Vdc
-
RF
INPUT
Z1
Z2
Z3
D.U.T.
Z4
Z5
Z6
C4
RF
OUTPUT
L1
C1 — 0.1
µF
C2, C4 — 220 pF Chip Capacitor
C3 — 20
µF,
50 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z6 Distributed Microstrip Elements, See Photomaster
Board Material — 0.031″ Thick Glass Teflon
Figure 1. 1090 MHz Test Circuit
REV 8
2
TYPICAL CHARACTERISTICS
6.5
f = 0.96 GHz
Pout , OUTPUT POWER (W pk)
5.5
Pout , OUTPUT POWER (W pk)
1.09 GHz
7
8
V
CC
= 35 V
t
P
= 10
µs
D = 1%
P
in
= 650 mW pk
4.5
1.215 GHz
V
CC
= 35 V
t
P
= 10
µs
D = 1%
250
350
450
P
in
, INPUT POWER (mW pk)
550
650
6
3.5
5
400 mW pk
2.5
150
4
960
1090
f, FREQUENCY (MHz)
1215
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
5
16
V
CC
= 35 V
t
P
= 10
µs
D = 1%
Pout , OUTPUT POWER (W pk)
G PB , POWER GAIN (dB)
14
4
P
in
= 400 mW pk
t
P
= 10
µs
D = 1%
f = 1090 MHz
3
12
P
out
= 4 W pk
10
20
25
30
V
CC
, SUPPLY VOLTAGE (V)
35
8
960
1090
f, FREQUENCY (MHz)
1215
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
+j50
+j25
Z
in
+j10
1090
1215
+j100
+j150
+j250
+j500
0
10
25
50
100
150
250
500
f = 960 MHz
f
MHz
960
1090
1215
Z
in
Ohms
5.0 + j17.5
10 + j23
16 + j29.5
Z
OL
* (P
in
= 400 mW pk)
Ohms
23.5 – j26
18.5 – j25
15.5 – j23.5
Z
OL
* (P
out
= 4.0 W pk)
Ohms
22.5 – j36
15 – j32.5
11 – j23
Z
OL
* (P
in
= 650 mW pk)
-j10
1090 f = 960 MHz
1215
1215
-j25
1090
-j500
-j250
-j150
-j100
Z
OL
* = Conjugate of the optimum load impedance into which the device
Z
OL
* =
output operates at a given output power, voltage, and frequency.
f = 960 MHz
Z
OL
* (P
out
= 4 W pk)
-j50
COORDINATES IN OHMS
Figure 6. Series Equivalent Input/Output Impedance
REV 8
3
TYPICAL CHARACTERISTICS
P
out
= 4 W pk
V
CC
= 35 V
t
P
= 1 ms
D = 10%
f = 1090 MHz
Figure 7. Typical Long Pulse Performance
REV 8
4
PACKAGE DIMENSIONS
F
4
1
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
C
D
F
H
J
K
INCHES
MIN
MAX
0.270
0.290
0.115
0.135
0.195
0.205
0.095
0.105
0.050
0.070
0.003
0.007
0.600
---
BASE
EMITTER
BASE
COLLECTOR
MILLIMETERS
MIN
MAX
6.86
7.36
2.93
3.42
4.96
5.20
2.42
2.66
1.27
1.77
0.08
0.17
15.24
---
K
D
H
SEATING
PLANE
A
J
C
STYLE 1:
PIN 1.
2.
3.
4.
CASE 332A–03
ISSUE D
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 8
5
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