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43CTQ080

产品描述20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别分立半导体    二极管   
文件大小113KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
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43CTQ080概述

20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

43CTQ080规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
零件包装代码TO-220AB
包装说明R-PSFM-T3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.98 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e0
最大非重复峰值正向电流850 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流20 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压100 V
表面贴装NO
技术SCHOTTKY
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

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43CTQ...
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
FEATURES
• 175 °C T
J
operation
Base 2
common
cathode
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
Anode
TO-220AB
Anode
2
1 Common 3
cathode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 20 A
80/100 V
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
20 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
43CTQ080
80
43CTQ100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 135 °C, rectangular waveform
40
850
A
275
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
20
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93917
Revision: 21-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

 
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