MBR 1640
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 16 A (Low Ir)
SYM
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage:
Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
IFAV
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 16 Ampere, Ta=25℃
VF MAX
Maximum Instantaneous Reverse Voltage
@ VR= 43 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature
TYPE: MBR1640
(RSingle
□Dual)
Anode
Spec. Limit
40
16
0.585
0.580
Die Sort
45
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.080
0.075
mA
pF
310
-50 to +150
-50 to +150
Amp
℃
℃
Specifications apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
Ｂ
Ｔ½½－½½½½ Ｍ½½½½
Ｓ
½
Ｏ
２
Ｐ½½½½½½½½½½
Ａ
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
µ
m
3124
2986
203
254
Mil
122.99
117.55
8.00
10.00
PS:
(1)Cutting street width is around 50µ m (1.96mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Ｐ＋ Ｇ½½½½ Ｒ½½½
Ｂ½½½－½½½½ Ｍ½½½½
Ｃ
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