1N3305B THRU 1N3350B
SILICON ZENER DIODE
6.8 VOLT THRU 200 VOLT
50W, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N3305B series
types are silicon Zener diodes manufactured in a
hermetically sealed metal case, designed for high
reliability industrial applications. Also available in
reverse polarity connection (replace “B” suffix with “RB”
suffix in part number - ex. 1N3305RB).
DO-5 CASE
MAXIMUM RATINGS:
(TC=75°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
Θ
JC
50
-65 to +175
2.0
UNITS
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=30°C) VF=1.5V MAX @ IF=10A
ZENER
VOLTAGE
TYPE
MIN
V
1N3305B
1N3306B
1N3307B
1N3308B
1N3309B
1N3310B
1N3311B
1N3312B
1N3313B
1N3314B
1N3315B
1N3316B
1N3317B
1N3318B
1N3319B
1N3320B
1N3321B
1N3322B
1N3323B
1N3324B
1N3325B
1N3326B
1N3327B
1N3328B
1N3329B
1N3330B
6.460
7.125
7.790
8.645
9.500
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
28.50
31.35
34.20
37.05
40.85
42.75
44.65
VZ @ IZT
NOM
V
6.8
7.5
8.2
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
30
33
36
39
43
45
47
MAX
V
7.140
7.875
8.610
9.555
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
31.50
34.65
37.80
40.95
45.15
47.25
49.35
TEST
CURRENT
IZT
mA
1850
1700
1500
1370
1200
1100
1000
960
890
830
780
740
700
660
630
570
520
500
460
420
380
350
320
290
280
270
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
Ω
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.5
2.6
2.7
2.8
3.0
3.2
3.5
4.0
4.5
4.5
5.0
ZZK @ IZK
Ω
mA
70
70
70
70
80
80
80
80
80
80
80
80
80
80
80
80
80
90
90
90
90
90
90
90
100
100
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
REVERSE
CURRENT
@ VR
μA
V
150
75
50
25
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.5
5.0
5.4
6.1
6.7
8.4
9.1
9.9
10.6
11.4
12.2
13.0
13.7
14.4
15.2
16.7
18.2
19.0
20.6
22.8
25.1
27.4
29.7
32.7
34.2
35.8
IR
MAXIMUM
ZENER
CURRENT
IZM
mA
6600
5900
5200
4800
4300
3900
3600
3300
3000
2800
2650
2500
2300
2200
2100
1900
1750
1550
1500
1400
1300
1150
1050
975
930
880
TYPICAL
TEMPERATURE
COEFFICIENT
V
Z
%/°C
0.040
0.045
0.048
0.051
0.055
0.060
0.065
0.065
0.070
0.070
0.070
0.075
0.075
0.075
0.075
0.080
0.080
0.080
0.085
0.085
0.085
0.085
0.090
0.090
0.090
0.090
R2 (4-February 2013)
1N3305B THRU 1N3350B
SILICON ZENER DIODE
6.8 VOLT THRU 200 VOLT
50W, 5% TOLERANCE
ELECTRICAL CHARACTERISTICS - Continued:
(TC=30°C) VF=1.5V MAX @ IF=10A (for all types)
ZENER
VOLTAGE
TYPE
MIN
V
1N3331B
1N3332B
1N3333B
1N3334B
1N3335B
1N3336B
1N3337B
1N3338B
1N3339B
1N3340B
1N3341B
1N3342B
1N3343B
1N3344B
1N3345B
1N3346B
1N3347B
1N3348B
1N3349B
1N3350B
47.50
48.45
49.40
53.20
58.90
64.60
71.25
77.90
86.45
95.00
99.75
104.50
114.00
123.50
133.00
142.50
152.00
166.25
171.00
190.00
VZ @ IZT
NOM
V
50
51
52
56
62
68
75
82
91
100
105
110
120
130
140
150
160
175
180
200
MAX
V
52.50
53.55
54.60
58.80
65.10
71.40
78.75
86.10
95.55
105.00
110.25
115.50
126.00
136.50
147.00
157.50
168.00
183.75
189.00
210.00
TEST
CURRENT
IZT
mA
250
245
240
220
200
180
170
150
140
120
120
110
100
95
90
85
80
70
68
65
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
Ω
5.0
5.2
5.5
6.0
7.0
8.0
9.0
11
15
20
25
30
40
50
60
75
80
85
90
100
ZZK @ IZK
Ω
mA
100
100
100
110
120
140
150
160
180
200
210
220
240
275
325
400
450
500
525
600
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
REVERSE
CURRENT
IR @ VR
μA
V
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
38.0
38.8
39.5
42.6
47.1
51.7
56.0
62.2
69.2
76.0
79.8
83.6
91.2
98.8
106.4
114.0
121.6
133.0
136.8
152.0
MAXIMUM
ZENER
CURRENT
IZM
mA
830
810
790
740
660
600
540
490
420
400
380
365
335
310
290
270
250
230
220
200
TYPICAL
TEMPERATURE
COEFFICIENT
V
Z
%/°C
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.100
DO-5 CASE - MECHANICAL OUTLINE
R2 (4-February 2013)
w w w. c e n t r a l s e m i . c o m
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