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IDT70927S35GB: 产品描述Multi-Port SRAM, 32KX16, 35ns, CMOS, CPGA108, CAVITY UP, PGA-108; 产品类别存储存储; 文件大小44KB，共2页; 制造商IDT (Integrated Device Technology)

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IDT70927S35GB概述

Multi-Port SRAM, 32KX16, 35ns, CMOS, CPGA108, CAVITY UP, PGA-108

IDT70927S35GB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	PGA
包装说明	PGA,
针数	108
Reach Compliance Code	_compli
ECCN代码	3A001.A.2.C
最长访问时间	35 ns
其他特性	SELF-TIMED WRITE
JESD-30 代码	S-CPGA-P108
JESD-609代码	e0
长度	30.48 mm
内存密度	524288 bi
内存集成电路类型	MULTI-PORT SRAM
内存宽度	16
功能数量	1
端口数量	2
端子数量	108
字数	32768 words
字数代码	32000
工作模式	SYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	32KX16
输出特性	3-STATE
可输出	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	PGA
封装形状	SQUARE
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
认证状态	Not Qualified
座面最大高度	5.207 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子节距	2.54 mm
端子位置	PERPENDICULAR
处于峰值回流温度下的最长时间	30
宽度	30.48 mm

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HIGH-SPEED 512K (32K x 16)

SYNCHRONOUS

DUAL-PORT RAM

Integrated Device Technology, Inc.

ADVANCED

IDT70927S/L

FEATURES:

• High-speed clock-to-data output times

— Military: 35/55ns (max.)

— Commercial: 25/35/55ns (max.)

• Low-power operation

— IDT70927S

Active: 900mW (typ.)

Standby: 5mW (typ.)

— IDT70927L

Active: 900mW (typ.)

Standby: 1mW (typ.)

• 32K X 16 bits Synchronous Operation

• Architecture based on Dual-Port RAM cells

— Allows full simultaneous access from both ports

• Synchronous operation

— Data input, address, and control registers

— Fast 25ns clock to data out

— Self-timed write allows fast write cycle

— 30ns cycle times, 33MHz operation

• On-Chip counter provides burst capability for any size

burst or direct address access controlled by

ADS

• This part is available in a Flow-Through mode, with a

Pipe-lined version available soon

• Upper and lower byte accessability

• Clock enable feature

• Chip Select Feature allows power savings by allowing

control of the memory array's power usage

• Two Chip Select pins allows for either high or low activa-

tion of the memory array

• Guaranteed data output hold times

• Available in 108-pin PGA and 100-pin TQFP

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT70927 is a high-speed 32K x 16 bit synchronous

Dual-Port RAM. The memory array is based on Dual-Port

memory cells to allow simultaneous access from both ports.

Registers on control, data, and address inputs provide low

setup and hold times. The timing latitude provided by this

approach allow systems to be designed with very short

realized cycle times. With an input data register, this device

has been optimized for applications having unidirectional data

flow or bidirectional data flow in bursts.

FUNCTIONAL BLOCK DIAGRAM

I/O

-I/O

15L

I/O

Control

I/O

-I/O

I/O

Control

I/O

-I/O

15R

I/O

-I/O

14L

CLK

14R

Counter/

Address

Reg.

MEMORY

ARRAY

Counter/

Address

Reg.

CLK

3201 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGE

AUGUST 1995

DSC-1300/-

IDT70927S35GB相似产品对比

	IDT70927S35GB	IDT70927L55GB	IDT70927L55PF	IDT70927L35GB	IDT70927S55GB	IDT70927L35PF	IDT70927S35PF	IDT70927S55PF
描述	Multi-Port SRAM, 32KX16, 35ns, CMOS, CPGA108, CAVITY UP, PGA-108	Multi-Port SRAM, 32KX16, 55ns, CMOS, CPGA108, CAVITY UP, PGA-108	Multi-Port SRAM, 32KX16, 55ns, CMOS, PQFP100, TQFP-100	Multi-Port SRAM, 32KX16, 35ns, CMOS, CPGA108, CAVITY UP, PGA-108	Multi-Port SRAM, 32KX16, 55ns, CMOS, CPGA108, CAVITY UP, PGA-108	Multi-Port SRAM, 32KX16, 35ns, CMOS, PQFP100, TQFP-100	Multi-Port SRAM, 32KX16, 35ns, CMOS, PQFP100, TQFP-100	Multi-Port SRAM, 32KX16, 55ns, CMOS, PQFP100, TQFP-100
是否无铅	含铅	不含铅	含铅	不含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	PGA	PGA	QFP	PGA	PGA	QFP	QFP	QFP
包装说明	PGA,	PGA,	LFQFP,	PGA,	PGA,	TQFP-100	TQFP-100	LFQFP,
针数	108	108	100	108	108	100	100	100
Reach Compliance Code	_compli	_compli	_compli	not_compliant	not_compliant	not_compliant	_compli	_compli
ECCN代码	3A001.A.2.C	3A001.A.2.C	EAR99	3A001.A.2.C	3A001.A.2.C	EAR99	EAR99	EAR99
最长访问时间	35 ns	55 ns	55 ns	35 ns	55 ns	35 ns	35 ns	55 ns
其他特性	SELF-TIMED WRITE	SELF-TIMED WRITE	AUTOMATIC POWER-DOWN	SELF-TIMED WRITE	SELF-TIMED WRITE	AUTOMATIC POWER-DOWN	AUTOMATIC POWER-DOWN	AUTOMATIC POWER-DOWN
JESD-30 代码	S-CPGA-P108	S-CPGA-P108	S-PQFP-G100	S-CPGA-P108	S-CPGA-P108	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100
长度	30.48 mm	30.48 mm	14 mm	30.48 mm	30.48 mm	14 mm	14 mm	14 mm
内存密度	524288 bi	524288 bi	524288 bi	524288 bit	524288 bit	524288 bit	524288 bi	524288 bi
内存集成电路类型	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM
内存宽度	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2
端子数量	108	108	100	108	108	100	100	100
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	125 °C	125 °C	70 °C	125 °C	125 °C	70 °C	70 °C	70 °C
组织	32KX16	32KX16	32KX16	32KX16	32KX16	32KX16	32KX16	32KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	PGA	PGA	LFQFP	PGA	PGA	LFQFP	LFQFP	LFQFP
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	NOT SPECIFIED	240	NOT SPECIFIED	225	225	225	240
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.207 mm	5.207 mm	1.6 mm	5.207 mm	5.207 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	YES	NO	NO	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	COMMERCIAL	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	PIN/PEG	PIN/PEG	GULL WING	PIN/PEG	PIN/PEG	GULL WING	GULL WING	GULL WING
端子节距	2.54 mm	2.54 mm	0.5 mm	2.54 mm	2.54 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	PERPENDICULAR	PERPENDICULAR	QUAD	PERPENDICULAR	PERPENDICULAR	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	20	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED	20
宽度	30.48 mm	30.48 mm	14 mm	30.48 mm	30.48 mm	14 mm	14 mm	14 mm
厂商名称	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
JESD-609代码	e0	e3	e0	e3	e0	-	-	e0
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)

IDT70927S35GB

IDT70927S35GB概述

IDT70927S35GB规格参数

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IDT70927S35GB相似产品对比

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