SEMICONDUCTOR
RoHS
30PT Series
RoHS
Stansard SCRs, 30A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
30
600 to 1600
4
to
50
Unit
A
V
mA
A1
A2
G
1
2
3
A2
TO-220AB
(non-Insulated)
(30PTxxA)
A2
TO-220AB
(lnsulated)
(30PTxxAI)
DESCRIPTION
The 30PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power dissipation are critical such as solid
state relay, welding equipment and high power
control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
A1 A2
G
A2
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(30PTxxB)
TO-3P
(Insulated)
(30PTxxBI)
2
(A2)
TO-263
(D
2
PAK)
(30PTxxH)
TO-247AB
(30PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
Operating junction temperature range
Maximum peak reverse gate voltage
- 40
to
+ 125
5
V
V
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
T
c
=100°C
T
c
=95°C
T
c
=80°C
T
c
=100°C
T
c
=95°C
T
c
=80°C
t = 20 ms
t = 16.7 ms
400
420
800
50
4
10
1
A
A
2
s
A/µs
A
W
W
19
A
30
A
VALUE
UNIT
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
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Page 1 of 6
SEMICONDUCTOR
RoHS
30PT Series
RoHS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
Min.
Max.
Max.
30PTxxxx
4
mA
50
1.3
0.2
75
40
500
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
250
Max.
Max.
Max.
Max.
Max.
1.6
5
2
1.27
12
V
µA
mA
V
mΩ
V/µs
V
V
mA
mA
Unit
V
D
= V
DRM
, R
L
= 3.3K
Ω,
R
GK
= 220
Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 60A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
V
DRM
≤
800V
V
DRM
≥
1000V
T
j
= 125°C
Min.
Max.
Typ.
THERMAL RESISTANCE
SYMBOL
Parameter
D
2
PAK/TO-220AB/TO-3P/TO-247AB
R
th(j-c)
Junction to case
(DC)
TO-3P insulated
TO-220AB insulated
S = 1 cm
2
R
th(j-a)
Junction to ambient
TO-263( D
2
PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
S=Copper surface under tab
VALUE
1.0
1.2
2.0
45
60
50
°C/W
°C/W
UNIT
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
30PTxxA/30PTxxAl
30PTxxH
30PTxxB/30PTxxBI
30PTxxC
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
1200
V
V
V
V
V
1600
V
V
V
V
V
50
mA
50
mA
50
mA
50
mA
TO-220AB
D
2
PAK
TO-3P
TO-247AB
SENSITIVITY
PACKAGE
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Page 2 of 6
SEMICONDUCTOR
RoHS
30PT Series
RoHS
ORDERING INFORMATION
ORDERING TYPE
30PTxxA
30PTxxAI
30PTxxH
30PTxxB
30PTxxBI
30PTxxC
Note:
xx
=
voltage
MARKING
30PTxxA
30PTxxAI
30PTxxH
30PTxxB
30PTxxBI
30PTxxC
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D
2
PAK)
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
2.0g
2.3g
2.0g
4.3g
4.8g
5g
,
BASE Q TY
50
50
50
30
30
30
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Tube
ORDERING INFORMATION SCHEME
30 PT 06
Current
30 = 30A,
I
T(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
B
=
TO-3P (non-insulated)
BI
=
TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D
2
PAK)
Fig.1 Maximum average power dissipation
versus average on-state current.
Fig.2 Correlation between maximum average
power dissipation and maximum allowable
temperature
P(W)
50
P(W)
50
DC
T
case
(°C)
R th =1°C/W
R th =0°C/W
α=180°
40
α=180°
40
(T
amb
and T
lead
)
50
75
30
α=60°
α=120°
α=90°
30
20
360°
20
10
α=30°
10
R th =3°C/W
R th =2°C/W
100
I
T(RMS)
(A)
0
0
5
10
15
20
25
α
T
amb
(°C)
35
0
0
20
40
60
80
100
120
140
30
125
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Page 3 of 6
SEMICONDUCTOR
RoHS
30PT Series
RoHS
Fig.3 RMS on-state current versus case
temperature.
I
T(RMS)
(A)
35
30
25
20
15
10
5
0
0
25
50
75
100
125
TO-220AB
TO-263
TO-220AB insulated
TO-3P insulated
TO-3P
TO-247AB
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th(j-c)
/R
th(j-c)
]
1.00
Z
th(j-c)
0.10
Z
th(j-a)
0.01
t
P
(s)
T
case
(°C)
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Fig.5 Relative variation of gate trigger
current versus junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
Fig.6 Surge peak on-state current versus
number of cycles.
I
TSM
(A)
500
2.0
400
t p = 10ms
One cycle
1.5
l
GT
l
H
&l
L
300
T
j
initial = 25°C
1.0
200
100
0.5
T
j
(°C)
0.0
-40 -30 -20 -10
Number of cycles
0
1
10
100
1000
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.7 Non-repetitive surge peak on-state
current and corresponding value of
l
2
t versus sinusoidal pulse width
I
TSM
(A),
l
2
t
(A
2
s)
2000
pulse with t
p
< 10 ms, and corresponding values of l
2
t
Fig.8 On-state characteristics
(maximum values)
I
TM
(A)
1000
1000
I
TSM
T
j
initial = 25°C
T
j
= max
l
2
t
100
10
T
j
= 25°C
T
j
= max.:
V
to
=1.27V
R
d
= 12mΩ
200
T
p
(ms)
1
2
5
10
V
TM
(V)
1
1
2
3
4
5
6
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Page 4 of 6
SEMICONDUCTOR
RoHS
30PT Series
RoHS
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
TO-3P
RoHS
2
(A2)
(G)3
1(A1)
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Page 5 of 6
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