VS-30BQ100GPbF
Vishay High Power Products
Schottky Rectifier, 3 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
SMC
PRODUCT SUMMARY
I
F(AV)
V
R
3.0 A
100 V
DESCRIPTION
The VS-30BQ100GPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3.0 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
100
800
0.62
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30BQ100GPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 148 °C, rectangular waveform
50 % duty cycle at T
L
= 138 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
3.0
4.0
800
70
3.0
0.5
mJ
A
A
UNITS
Document Number: 94506
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-30BQ100GPbF
Vishay High Power Products
Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.79
0.90
0.62
0.70
0.1
5.0
115
3.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
DC operation
R
thJA
TEST CONDITIONS
VALUES
- 55 to 175
12
UNITS
°C
°C/W
46
0.24
0.008
g
oz.
V3JG
Case style SMC (similar to DO-214AB)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
(2)
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2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94506
Revision: 04-Mar-10
VS-30BQ100GPbF
Schottky Rectifier, 3 A
Vishay High Power Products
10
10
(mA)
T = 175°C
J
150°C
125°C
100°C
1
0.1
0.01
0.001
0.0001
0
0
Reverse Current - I
R
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
20
40
60
80
100
Reverse Voltage - V
R
(V)
1
T
J
= 175°C
T
J
= 125°C
T = 25°C
J
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
Junction Capacitance - C
T
(p F)
T = 25°C
J
100
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V
FM
(V)
1.2
10
0
20
40
60
Reverse Voltage - V (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
100
(°C/W)
thJC
10
Thermal Impedance Z
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t1
t2
1
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
.
.
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
10
100
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 94506
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-30BQ100GPbF
Vishay High Power Products
Schottky Rectifier, 3 A
180
Allowable Lead Temperature (°C)
Average Power Loss (Watts)
2.5
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
160
2
1.5
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS Limit
140
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
1
0.5
0
DC
120
100
0
1
2
3
4
5
Average Forward Current - I
F(AV)
(A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1000
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - T
p
(Microsec)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94506
Revision: 04-Mar-10
VS-30BQ100GPbF
Schottky Rectifier, 3 A
ORDERING INFORMATION TABLE
Device code
Vishay High Power Products
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
30
2
B
3
Q
4
100
5
G
6
TR
7
PbF
8
HPP product suffix
Current rating
B = Single lead diode
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
G = Schottky generation
None = Box (1000 pieces)
TR = Tape and reel (3000 pieces)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
Tape and reel
Bulk
www.vishay.com/doc?95023
www.vishay.com/doc?95029
www.vishay.com/doc?95034
www.vishay.com/doc?95397
Document Number: 94506
Revision: 04-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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