电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N3911TX

产品描述Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, DO-5, HERMETICALLY SEALED, 1 PIN
产品类别分立半导体    二极管   
文件大小98KB,共2页
制造商SSDI
官网地址http://www.ssdi-power.com/
下载文档 详细参数 全文预览

1N3911TX概述

Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, DO-5, HERMETICALLY SEALED, 1 PIN

1N3911TX规格参数

参数名称属性值
零件包装代码DO-5
包装说明O-MUPM-D1
针数1
Reach Compliance Codecompli
ECCN代码EAR99
应用FAST RECOVERY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-5
JESD-30 代码O-MUPM-D1
最大非重复峰值正向电流300 A
元件数量1
相数1
端子数量1
最大输出电流30 A
封装主体材料METAL
封装形状ROUND
封装形式POST/STUD MOUNT
认证状态Not Qualified
最大重复峰值反向电压200 V
最大反向恢复时间0.2 µs
表面贴装NO
端子形式SOLDER LUG
端子位置UPPER
Base Number Matches1

文档预览

下载PDF文档
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1N3909
Thru
1N3913
Part Number/Ordering Information
1/
1N3909
__ __
Designer’s Data Sheet
30A, 200nsec, 50-400 V
Fast Recovery Rectifier
Features
:
│ │
Screening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
Pin Configuration
__ = Normal
(Cathode to Stud)
(See Table 1)
R = Reverse
(Anode to Stud)
Family/Voltage
1N3909 = 50V
1N3910 = 100V
1N3911 = 200V
1N3912 = 300V
1N3913 = 400V
Fast Recovery: 200nsec Maximum (100nsec typ.)
3/
Low Reverse Leakage Current
Single Chip Construction
PIV to 400V, Higher Voltages Available
Hermetically Sealed Isolated Package
High Surge Rating
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
4/
1N3909
1N3910
1N3911
1N3912
1N3913
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
T
STG
R
θJC
Value
50
100
200
300
400
30
300
-55 to +150
-65 to +175
1.2
Units
Peak Repetitive Reverse Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Amps
Amps
ºC
ºC/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C, per leg)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
DO-5:
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0114A
DOC

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1271  1047  482  1621  312  26  22  10  33  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved