2MBI200UC-120
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
1200V / 200A 2 in one-package
Equivalent Circuit Schematic
C1
E2
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
C2E1
G1 E1
G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
iso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms
Tc=25°C
Tc=80°C
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
2
1 device
AC:1min.
Rating
1200
±20
300
200
600
400
200
400
1040
+150
-40 to +125
2500
3.5
4.5
Unit
V
V
A
W
°C
VAC
N·m
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
Input capacitance
Turn-on time
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
Reverse recovery time
Lead resistance, terminal-chip*3
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=200mA
V
GE
=15V, I
C
=200A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=200A
V
GE
=±15V
R
G
=3
Ω
V
GE
=0V
I
F
=200A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I
F
=200A
Characteristics
Min.
Typ.
–
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.5
1.85
2.10
1.75
2.00
22
0.36
0.21
0.03
0.37
0.07
1.70
1.80
1.60
1.70
–
0.53
Unit
Max.
2.0
400
8.5
2.20
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.00
–
1.90
–
0.35
–
µs
mΩ
nF
µs
mA
nA
V
V
Turn-off time
Forward on voltage
V
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
–
–
–
–
–
0.025
Unit
Max.
0.12
0.20
–
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2MBI200UC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
500
VGE=20V
15V
500
VGE=20V
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
400
Collector current : Ic [A]
12V
Collector current : Ic [A]
400
15V
12V
300
10V
300
200
200
10V
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
500
T j=25°C
T j=125°C
10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
400
Collector current : Ic [A]
Collector - Emitter voltage : VCE [ V ]
8
300
6
200
4
100
2
Ic=400A
Ic=200A
Ic=100A
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
100.0
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
Dynamic Gate charge (typ.)
Vcc=600V
，
Ic=200A
，
25°C
Tj=
Capacitance : Cies, Coes, Cres [ nF ]
Cies
10.0
VGE
Cres
1.0
Coes
VCE
0
300
600
900
1200
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2MBI200UC-120
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C
1000
ton
toff
tr
100
tf
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
Collector current : Ic [ A ]
10
0
100
200
300
400
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
10000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
40
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω
Eoff(125°
Eon(125°C)
30
Eoff(25°C)
20
Eon(25°C)
ton
toff
1000
tr
100
tf
10
Err(125°C)
Err(25°C)
10
1.0
10.0
Gate resistance : Rg [
Ω
]
100.0
0
0
100
200
300
400
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
150
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
400
500
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C
100
Collector current : Ic [ A ]
300
200
50
Eoff
100
Err
0
1.0
10.0
Gate resistance : Rg [
Ω
]
100.0
0
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
2MBI200UC-120
Forward current vs. Forward on voltage (typ.)
chip
500
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Tj=25°C
Forward current : IF [ A ]
400
Tj=125°C
1000
IGBT Module
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω
300
100
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
200
100
0
0
1
2
3
4
Forward on voltage : VF [ V ]
10
0
100
200
300
400
Forward current : IF [ A ]
Transient thermal resistance (max.)
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
IGBT
0.100
0.010
0.001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm
M234
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
