SEMICONDUCTOR
RoHS
26T Series
RoHS
TRIACs, 25A
Sunbberless and Standard
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
High commutation (4 quadrant) or very
High commutation (3 quadrant) capability
26T series are
UL
certified (File ref: E320098)
Packages are RoHS compliant
A1
A2
G
1
2
3
A2
TO-220AB
(non-Insulated)
(26TxxA)
TO-220AB
(lnsulated)
(26TxxAI)
APPLICATIONS
Applications include the ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits,
etc., or for phase control operation in light
dimmers, motor speed controllers, and silmilar.
The snubberless versions are especially
recommended for use on inductive loads,
due to their high commutation performances.
The 26T series provides an insulated tab
(rated at 2500V
RMS
).
A1 A2
G
A2
A1 A2 G
TO-3P
(non-Insulated)
(26TxxB)
TO-3P
(Insulated)
(26TxxBI)
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
A2
VALUE
25
600 to 1200
35 to 50
UNIT
A
V
mA
A1 A2
G
TO-263
(D
2
PAK)
(26TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TO-3P
RMS on-state current
(full
sine wave)
I
T(RMS)
TO-263/TO-220AB/TO-3P insulated
TO-220AB insulated
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
I
TSM
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
TEST CONDITIONS
T
c
= 105ºC
T
c
= 100ºC
T
c
= 75ºC
t = 20 ms
t = 16.7 ms
VALUE
UNIT
25
A
F =50 Hz
F =60 Hz
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
250
260
340
A
A
2
s
A/µs
A
W
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
ºC
- 40
to
+ 125
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Page 1 of 6
SEMICONDUCTOR
RoHS
26T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
26Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T j = 125°C
Without snubber, T j = 125°C
MAX.
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MIN.
MAX.
50
70
80
500
MIN.
13
22
A/ms
MAX.
1.3
0.2
75
80
mA
100
1000
V/µs
V
V
mA
Unit
CW
35
BW
50
mA
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
26Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c =13.3 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
B
MAX.
50
100
1.3
0.2
80
70
160
500
10
V/µs
V/µs
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 35 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
3
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
16
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
TO-3P
TO-263/TO-220AB
TO-3P Insulated
TO-220AB Insulated
S = 1 cm
2
VALUE
0.6
0.8
0.9
1.7
45
60
50
UNIT
R
th(j-c)
Junction to case
(AC)
TO-263
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
°C/W
R
th(j-a)
Junction to ambient
S
=
Copper surface under tab.
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Page 2 of 6
SEMICONDUCTOR
RoHS
26T Series
RoHS
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
26TxxA-B/ 26TxxAl-B
26TxxA-CW/26TxxAl-CW
26TxxA-BW/26TxxAl-BW
26TxxB-B/26TxxBl-B
26TxxB -CW/26TxxBl-CW
26TxxB -BW/26TxxBl-BW
26TxxH-B
26TxxH -CW
26TxxH -BW
AI:
Insulated TO-220AB package
BI:
Insulated TO-3P package
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
1200
V
V
V
V
V
V
V
V
V
V
50
mA
35
mA
50
mA
50
mA
35
mA
50
mA
50
mA
35
mA
50
mA
Standard
Snubberless
Snubberless
Standard
Snubberless
Snubberless
Standard
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-220AB
TO-3P
TO-3P
TO-3P
D
2
PAK
D
2
PAK
D
2
PAK
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
26TxxA-yy
26TxxAI-yy
26TxxB-yy
26TxxBI-yy
26TxxH-yy
MARKING
26TxxA-yy
26TxxAI-yy
26TxxB-yy
26TxxBI-yy
26TxxH-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-3P
TO-3P (insulated)
D
2
PAK
WEIGHT
2.0g
2.3g
4.3g
4.8g
2.0g
BASE Q,TY
50
50
30
30
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
ORDERING INFORMATION SCHEME
26 T 06
Current
26 = 25A
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
B
=
TO-3P (non-insulated)
BI = TO-3P (
insulated
)
H = TO-263 (D
2
PAK)
I
GT
Sensitivity
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
B = 50mA Standard
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Page 3 of 6
SEMICONDUCTOR
RoHS
26T Series
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
30
25
20
15
10
5
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
30
25
20
15
10
5
TO-220AB
TO-263
TO-3P(insulated)
TO-220AB
( insulated )
TO-3P
I
T(RMS)
(A)
0
0
5
10
15
20
25
0
0
25
50
T
C
(°C)
75
100
125
Fig.3 D
2
PAK RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
I
T(RMS)
(A)
1E+0
D
2
PAK
(S=1cm
2
)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
K=[Z
th
/R
th
]
Z
th(j-c)
Z
th(j-a)
TO-263AB
TO-220AB
TO-220AB (insulated)
1E-1
1E-2
Z
th(j-a)
TO-3P(insulated)
T
amb
(°C)
25
50
75
100
125
0.0
0
1E-3
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
I
TSM
(A)
t=20ms
I
300
100
(A)
300
250
T
j
=T
j
max
200
150
T
j
max.
V
to
= 0.85
V
R
d
= 16
mΩ
Non repetitive
T
j
initial=25°C
One cycle
10
T
j
=25°C
100
50
Repetitive
T
c
=75°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
1
10
Number of cycles
100
1000
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Page 4 of 6
SEMICONDUCTOR
RoHS
26T Series
RoHS
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
3000
T
j
initial=25°C
dI/dt limitation:
50A/µs
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
I
TSM
1000
I
GT
1.5
I
2
t
I
H
&
I
L
1.0
0.5
t
p
(ms)
100
0.01
0.0
0.10
1.00
10.00
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of decrease
of main current versus T
j
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
B
CW/BW
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
6
5
4
3
2
1
100.0
0
0
25
50
75
100
125
(dV/dt)c (V/µs)
0.1
1.0
10.0
T
j
(°C)
Fig.11 D
2
PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
TO-263
S(cm
2
)
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Page 5 of 6
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