Bulletin I2199 rev. A 09/05
SAFE
IR
Series
25TTS12PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
Description/Features
The 25TTS..
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125°C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
V
T
< 1.25V @ 16A
I
TSM
= 300A
V
RRM
= 1200V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
18
Three-phase Bridge
22
Units
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
Package Outline
Units
A
Values
16
25
1200
300
@ 16 A, T
J
= 25°C
1.25
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
TO-220
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1
25TTS12PbF
SAFE
IR
Series
Bulletin I2199 rev. A 09/05
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
1200
V
DRM
, maximum
peak direct voltage
V
1200
I
RRM
/
I
DRM
125°C
mA
10
25TTS12PbF
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
I
TSM
I
2
t
Max. RMS On-state Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
Values
16
25
300
350
450
630
Units
A
Conditions
@ T
C
= 93° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 16A, T
J
= 25°C
T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
6300
1.25
12.0
1.0
0.5
10
Typ. Max.
--
100
200
500
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
Holding Current
Anode Supply = 6V, Resistive load, Initial I
T
=1A
mA
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load
I
L
Max. Latching Current
dv/dt Max. Rate of Rise of off-state Volt.
di/dt
Max. Rate of Rise of turned-on Curr.
2
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25TTS12PbF
SAFE
IR
Series
Bulletin I2199 rev. A 09/05
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
Values
8.0
2.0
1.5
10
60
45
20
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
2.5
2.0
1.0
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.25
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
Values
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
to Case
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Marking Device
Min.
Max.
0.5
2 (0.07)
6 (5)
12 (10)
g (oz.)
Kg-cm
(Ibf-in)
Mounting surface, smooth and greased
Values
- 40 to 125
- 40 to 125
1.1
62
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
R
thJA
°C/W
DC operation
TO-220
25TTS12
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25TTS12PbF
SAFE
IR
Series
Bulletin I2199 rev. A 09/05
Maximum Allowab le Case T
emperature (°C)
25T S S
T .. eries
R
thJC
(DC) = 1.1 °C/ W
Maximum Allowable Case T
empe rature (°C)
130
130
25T S S
T .. eries
R
thJC
(DC) = 1.1 °C/ W
120
120
Conduc tion Angle
110
Conduc tion Period
110
30°
100
60°
100
90°
120°
180°
90
30°
80
0
5
90°
60° 120°
180°
10
15
20
DC
25
30
90
0
5
10
15
20
Average On-state Current (A)
Avera ge On-sta te Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-sta te Power Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
35
30
25
20
RMSLimit
15
10
5
0
0
5
10
15
20
25
30
Avera ge On-sta te Current (A)
Conduction Period
25
180°
120°
90°
60°
30°
R
MSLimit
20
15
DC
180°
120°
90°
60°
30°
10
Conduc tion Angle
5
25T S S
T .. eries
T
J
= 125°C
25T S S
T .. eries
T
J
= 125°C
0
0
4
8
12
16
20
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
350
Fig. 4 - On-state Power Loss Characteristics
400
Peak Half S Wa ve On-sta te Current (A)
ine
350
300
250
200
150
100
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Cond uc tion Ma y Not Be Ma inta ined.
Initia l T = 125°C
J
No Voltage Rea pp lied
Rated V
RRM
Reapp lied
Pea k Half S Wave On-sta te Current (A)
ine
300
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
250
200
25T S S
T .. eries
150
1
10
100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
25T S S
T .. eries
0.1
Pulse T in Duration (s)
ra
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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25TTS12PbF
SAFE
IR
Series
Bulletin I2199 rev. A 09/05
1000
Insta ntaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
25T S S
T .. eries
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
Rec tangular gate pulse
a)Recommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
T = -10 °C
J
T = 25 °C
J
T = 125 °C
J
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
25T S S
T .. eries
0.1
1
Frequenc y Limited by PG(AV)
10
100
Instantaneous Ga te Current (A)
Fig. 8 - Gate Characteristics
T nsient T
ra
hermal Imp ed ance Z thJC (°C/W)
10
S
teady S
tate Value
(DC Opera tion)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
25T S S
T .. eries
0.01
0.0001
0.1
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
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