25TTS...FPPbF High Voltage Series
Vishay High Power Products
Phase Control SCR
TO-220AB FULL-PAK, 25 A
DESCRIPTION/FEATURES
2
(A)
The 25TTS...FPPbF High Voltage Series of
Available
silicon controlled rectifiers are specifically
designed for medium power switching and phase
RoHS*
COMPLIANT
control applications. The glass passivation
technology used has reliable operation up to 140 °C junction
temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines. Fully isolated
package (V
INS
= 2500 V
RMS
); plastic material 94V
Ro
.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
TO-220AB FULL-PAK
1 (K) (G)
3
PRODUCT SUMMARY
V
T
at 16 A
I
TSM
V
RRM
< 1.25 V
200 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800/1200
300
1.25
500
150
- 40 to 125
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
25TTS08FPPbF
25TTS12FPPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94384
Revision: 27-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
25TTS...FPPbF High Voltage Series
Vishay High Power Products
Phase Control SCR
TO-220AB FULL-PAK, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
C
= 85 °C, 180° conduction half sine wave
VALUES
TYP. MAX.
16
25
300
350
450
630
6300
1.25
12.0
1.0
V
R
= Rated V
RRM
/V
DRM
-
0.5
10
100
200
500
150
V/µs
A/µs
mA
A
2
s
A
2
√s
V
mΩ
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94384
Revision: 27-May-08
25TTS...FPPbF High Voltage Series
Phase Control SCR
Vishay High Power Products
TO-220AB FULL-PAK, 25 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB FULL-PAK (94/V0)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 125
1.5
62
1.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
25TTS08FP
25TTS12FP
Document Number: 94384
Revision: 27-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
25TTS...FPPbF High Voltage Series
Vishay High Power Products
Phase Control SCR
TO-220AB FULL-PAK, 25 A
Maximum Averag e On-state Power Loss (W)
35
30
25
20
R Limit
MS
15
10
5
0
0
5
10
15
20
25
30
Avera ge On-sta te Current (A)
Conduc tion Period
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
80
70
0
5
10
15
20
Average On-state Current (A)
30°
60°
90°
120°
180°
Conduc tion Angle
25T S S
T .. eries
R
thJC
(DC) = 1.5 °C/ W
DC
180°
120°
90°
60°
30°
25T S S
T .. eries
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Maximum Allowable Case T
emperature (°C)
130
Peak Half S Wave On-state Current (A)
ine
Fig. 4 - On-State Power Loss Characteristics
350
120
110
25T S S
T .. eries
R
thJC
(DC) = 1.5 °C/ W
300
At Any Rated Load Cond ition And With
Rated V
RRM
App lied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduc tion Period
100
90
30°
80
70
0
5
10
15
20
25
30
Average On-state Current (A)
60°
90°
120°
250
200
25T S S
T .. eries
150
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
180°
DC
Fig. 2 - Current Rating Characteristics
Maximum Average On-s te Power Los (W)
ta
s
25
180°
120°
90°
60°
30°
R
MSLimit
ine
Peak Half S Wa ve On-state Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
400
350
20
300
250
200
150
15
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduc tion Ma y Not Be Mainta ined.
Initia l T = 125°C
J
No Voltage R pp lied
ea
R
ated V
RRM
Reapp lied
10
Conduction Angle
5
25T S S
T .. eries
T
J
= 125°C
25T S S
T .. eries
100
0.01
0
0
4
8
12
16
20
Avera ge On-state Current (A)
0.1
Pulse T
rain Duration (s)
1
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94384
Revision: 27-May-08
25TTS...FPPbF High Voltage Series
Phase Control SCR
Vishay High Power Products
TO-220AB FULL-PAK, 25 A
1000
Insta ntaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
25T S S
T .. eries
1
0
1
2
3
4
5
Ins
tanta neous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
rans
ient Thermal Impedance Z
thJC
(°C/W)
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
teady S
tate Value
(DC Operation)
0.1
S
ingle Pulse
25T S S
T .. eries
0.01
0.0001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
T = -10 °C
J
T = 25 °C
J
J
T = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
25T S S
T .. eries
0.1
1
F
requenc y Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 94384
Revision: 27-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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