SEMICONDUCTOR
RoHS
25PT Series
RoHS
Stansard SCRs, 25A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
25
600 to 1600
4 to 40
Unit
A
V
mA
1
2
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(25PTxxA)
TO-220AB
(lnsulated)
(25PTxxAI)
A2
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A1 A2
G
2
(A2)
TO-263
(D
2
PAK)
(25PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
I
T(AV)
TO-263/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
p
=20
µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=100°C
Tc=83°C
Tc=100°C
16
Tc=83°C
t = 20 ms
t = 16.7 ms
300
314
450
50
4
10
1
600 to 1600
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
W
V
A
25
VALUE
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
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Page 1 of 5
SEMICONDUCTOR
RoHS
25PT Series
RoHS
(T
J
= 25
ºC unless otherwise specified
)
25PTxxxx
Unit
D
-
4
40
1.3
0.2
20
40
500
1.6
5
2
0.77
14
50
90
V
V
mA
mA
V/µs
V
µA
mA
V
m
mA
Min.
4
10
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
V
D
= V
DRM
, R
L
= 3.3K
R
GK
= 220
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 50A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220
Threshold Voltage
Dynamic Resistance
TEST CONDITIONS
Max.
Max.
T
j
= 125°C
Min.
Max.
Min.
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
Parameter
D
2
PAK /TO-220AB
R
th(j-c)
Junction to case (DC)
TO-220AB insulated
R
th(j-a)
Junction to ambient
S = 1 cm
2
TO-263( D
2
PAK)
TO-220AB/TO-220AB insulated
2.0
45
60
°C/W
VALUE
1.0
UNIT
°C/W
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(
x x
)
PART NUMBER
600
V
25PTxxA/25PTxxAl
25PTxxH
25PTxxA-D/25PTxxAl-D
25PTxxH-D
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
1200
V
V
V
V
V
1600
V
V
V
V
V
40
m
A
40
m
A
4~10
m
A
4~10
m
A
TO-220AB
D
2
PAK
TO-220AB
D
2
PAK
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
25PTxxA-y
25PTxxAI-y
25PTxxH-y
Note:
xx = voltage , y = sensitivity
MARKING
25PTxxA-y
25PTxxAI-y
25PTxxH-y
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D
2
PAK)
WEIGHT
2.0g
2.3g
2.0g
,
BASE Q TY
50
50
50
DELIVERY MODE
Tube
Tube
Tube
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Page 2 of 5
SEMICONDUCTOR
RoHS
25PT Series
RoHS
ORDERING INFORMATION SCHEME
25 PT 06
Current
25 = 25A, I
T(RMS)
- D
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D
2
PAK)
I
GT
Sensitivity
D = 4~10mA
Blank = 4~40mA
Fig.1 Maximum average power dissipation
versus average on-state current.
22
20
18
16
14
12
10
8
6
4
2
0
Fig.2 Average and DC on-state current
versus case temperature.
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
P
(
W
)
l
T(AV)
(A)
D
.
C
.
TO-220ABins
D²PAK
TO-220AB
α=180°
360°
I
T(AV)
(A)
0
2
4
6
8
10
12
α
T
case
(°C)
0
25
50
75
100
125
14
16
Fig.3 Average and DC on-state current
versus ambient temperature.
Fig.4 Relative variation of thermal impedance
versus pulse duration.(D²PAK, and
TO-220AB)
K=[Z
th
/R
th
]
1.00
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
l
T(AV)
(A)
D
.
C
.
α=180°
Z
th
(
j
-
c
)
D²PAK
TO-220AB
TO-220ABins
0.10
Z
th
(
j
-
a
)
T
amb
(°C)
0
25
50
75
100
125
0.01
1E-3
t
P
(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
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Page 3 of 5
SEMICONDUCTOR
RoHS
25PT Series
RoHS
Fig.5 Relative variation of thermal
impedance versus pulse duration.
(TO-220AB ins)
Fig.6 Relative variation of gate trigger
holding, and latching currents
versus junction temperature.
K=[Z
th
/R
th
]
1.0E+01
2.5
2.0
1.5
1.0E-01
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
Z
th(j-c)
l
GT
Z
th(j-a)
1.0
0.5
I
H
&
I
L
t
P
(s)
1.0E-02
1.0E-03 1.0E-02
1.0E-01
1.0E+00 1.0E+01
1.0E+02
1.0E+03
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Fig.7 Surge peak on-state current versus
number of cycles.
Fig.8 Non-repetitive surge peak on-state
current , and corresponding values
of l
2
t
I
TSM
(
A
)
, l²t (A²s)
T
j
initial = 25°C
350
300
250
200
150
100
50
0
I
TSM
(
A
)
T
p
=
1
0ms
2000
1000
l
TSM
One cycle
Non repetitive
T
j
initial = 25
°
C
dl/dt
limitattion
Repetitive
T
case
= 83 °C
l
2
t
Number of cycles
10
100
1000
100
0.01
Sinusoidal pulse width t p (ms)
0.10
1.00
10.00
1
Fig.9 On-state characteristics (maximum
values)
Fig.10 Thermal resistance junction to
ambient versus copper surface
under tab (D
2
PAK)
I
TM
(
A
)
1000
80
70
60
100
50
40
10
T
j
max.:
V
to
= 0.77V
R
d
= 14m
R
th
(
j-a
)
(°C/W)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
30
20
10
0
0
4
8
12
16
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
S(cm
2
)
20
24
28
32
36
40
3.5
4.0
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Page 4 of 5
SEMICONDUCTOR
RoHS
25PT Series
RoHS
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
TO-263(D
2
PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
RoHS
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
2
(A2)
(G)3
1(A1)
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Page 5 of 5
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