SEMICONDUCTOR
25D(R)Series
Glass Passivated Standard Recovery Diodes
(Stud Version), 25A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Wide current range
Voltage up to 1600V V
RRM
RoHS compliant
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
PRODUCT SUMMARY
I
F(AV)
25A
DO-203AA(DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
TEST CONDITIONS
T
C
VALUES
UNIT
A
ºC
25
120
39
A
A
A
2
s
V
ºC
50 HZ
60 HZ
50 HZ
60 HZ
Range
356
373
634
578
200 to 1600
-65 to 175
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
,MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
,MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
V
R(BR)
,MIMIMUM
AVALANCHE
VOLTAGE
V
(1)
V
RRM
,MAXIMUM
AT TJ=175
°
C
mA
02
04
25D( R )
200
400
600
800
1000
1200
1600
275
500
725
950
1200
1400
1800
-
500
750
950
1150
1350
1750
12
06
08
10
12
16
Note
(1) Avalanche version only available from V
RRM
400V to 1600V
Page 1 of 5
SEMICONDUCTOR
25D(R)Series
RoHS
RoHS
N
ell
High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
P
R
(1)
TEST CONDITIONS
180
°
conduction, half sine wave
VALUES
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward,
non-reptitive surge current
25
120
39
10
356
373
300
UNIT
A
ºC
A
K/W
10 s square pulse, T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
I
FSM
t = 8.3 ms
t = 10 ms
t
=
8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
A
314
634
578
450
410
6337
1.30
A
2
√
s
V
Maximum l²t for fusing
I
2
t
A
2
s
Maximum l²
√
t for fusing
Maximum forward voltage drop
Note
I
√
t
V
FM
2
t = 0.1 to 10 ms, no voltage reapplied
l
pk
= 78 A, T
J
= 25˚C, t
p
= 400µs rectangular wave
(1) Avalanche only for avalanche version, all other parameters the same as 25D
THERMAL AND MECHANICAL SPECIFCATIONS
PARAMETER
SYMBOL
T
J
T
stg
R
thJC
TEST CONDITIONS
VALUES
UNITS
ºC
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
- 65 to175
- 65 to 200
DC operation
1.5
K/W
R
thCS
Mounting surface, smooth, flat and greased
0.5
1.5
+0
-10%
(13)
1.2
-10%
(10)
6
0.21
+0
Not lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
N
·
m
(lbf
·
in)
N
·
m
(lbf
·
in)
g
oz.
DO-203AA (DO-4)
R
thJC
CONDUCTION
CONDUCTION ANGEL
180˚
120˚
90˚
60˚
30˚
Note
• The table above shows the increment of thermal resistance R
thJC
when devices
operate at different conduction angles than DC
SINUSOIDAL CONDUCTION
0.28
0.39
0.50
0.73
1.20
RECTANGULAR CONDUCTION
0.24
0.41
0.54
0.75
1.21
TEST CONDUCTIONS
UNITS
T
J
= T
J
maximum
K/W
Page 2 of 5
SEMICONDUCTOR
25D(R)Series
Fig.2 Current Ratings Characteristics
Maximum Allowable Case Temperature(˚C)
180
170
160
150
Conduction Period
RoHS
RoHS
N
ell
High Power Products
Fig.1 Current Ratings Characteristics
Maximum Allowable Case Temperature(˚C)
180
170
160
150
Conduction Angle
25D R Series
R
thJC
(DC)=1.5K/W
25D R Series
R
thJC
(DC)=1.5K/W
140
130
120
110
30°
100
0
5
10
15
20
25
30
60°
140
130
120
110
100
0
5
10
15 20
25
30
35
40
45
60°
30°
90°
120°
180°
90°
120°
180°
DC
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 Forward Power Loss Characteristics
35
2K
3K
/W
Maximum Average Forward Power Loss (W)
180°
30
25
120°
90°
60°
30°
20
RMS Limit
/W
R
t
hS
A
=
4K
1K
/W
/W
-D
el
ta
6K
8K
R
/W
/W
15
Conduction Angle
12K
10
25D
R
Series
/W
20K/
W
5
TJ = 175
˚
C
40K /W
0
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
25
DC
180°
20
120°
90°
60°
15
30°
8K
/W
6K
/W
Rt
hS
A=
4K
/W
RMS Limit
-D
elt
aR
10K
/W
10
Conduction Period
1 5 K /W
2 0 K /W
3 0 K /W
5
25D R Series
T
J
= 175
°C
0
0
5
10
15
20
25
30
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
SEMICONDUCTOR
25D(R)Series
RoHS
RoHS
N
ell
High Power Products
Fig. 5 Maximum Non-Repetitive Surge Current
350
300
Fig.6 Maximum Non-Repetitive Surge Current
400
Maximum Non Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
At Rated VRRM Applied Following Surge.
Initial TJ = 175°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Peak Half Sine Wave Forward Current (A)
350
300
250
200
150
100
50
0
0.01
0.1
25D
R
Series
Versus Pulse Train Duration.
Initial TJ = 175°C
No Voltage Reapplied
Reted VRRM Reapplied
250
200
150
100
50
1
25D
R
Series
10
100
1
10
Number Of Equal Amplitude Half Cycle current Pulses(N)
Pulse Train Duration (S)
Fig. 7 Forward Voltage Drop Characterisics
1000
Fig.8 Thermal Impedance ZthJC Characteristics
Transient Thermal Impedance ZthJC (K/W)
10
Steady State Value
RthJC = 1.5K/W
(DC Operation)
Instantaneous Forward Current (A)
100
T
J
= 25
°C
1
T
J
= 175
°C
10
25D
R
Series
25D
R
Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
0.1
0.001
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Square Wave Pulse Duration (s)
ORDERING INFORMATION TABLE
Device code
25
1
D
R
3
12
4
M
5
2
1
2
3
4
5
-
-
-
-
-
Current rating: Code = I
F(AV)
D = Standard recovery device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code
×
100 = V
RRM
(see Voltage Ratings table)
None = Stud base DO-203AA
(DO-4) #10-32 UNF-2A
M = Stud base DO-230AA (DO-4) M5
×
0.8 (not available
for avalanche diodes)
SEMICONDUCTOR
25D(R)Series
RoHS
RoHS
N
ell
High Power Products
11.6/12.4
(0.45/0.48)
Ø8.5/Ø8.9
(Ø0.33/Ø0.35)
Ø1.5/Ø1.7
Ø0.05/Ø0.06
3.7/4.3
(0.14/0.16)
0.5/1.0
(0.02/0.04)
20.0/21.0
(0.78/0.82)
9.6/10.1
(0.37/0.39)
10/32” UNF-2A
For metric devices: M5
×
0.8
10.5/11.5
(0.41/0.45)
5.0/5.6
(0.19/0.22)
10.6/11.2
(0.41/0.44)
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