AP02N70EJ-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
ESD Improved Capability
▼
Simple Drive Requirement
▼
RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
700V
7Ω
1.6A
S
Description
AP02N70 from APEC provide the designer with the best combination of
fast switching , low on-resistance and cost-effectiveness .
The TO-251 package is widely preferred for commercial-industrial
through hole applications and suited for AC/DC converters.
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
±20
1.6
1
6.4
45
13
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200804171
AP02N70EJ-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=150
o
C)
3
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=0.8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=0.8A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±20V
I
D
=0.8A
V
DS
=560V
V
GS
=10V
V
DD
=350V
I
D
=0.8A
R
G
=4.7Ω,V
GS
=10V
R
D
=438Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
700
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.65
-
-
-
17
1.5
11
10
8
21
15
170
30
20
Max. Units
-
7
4
-
10
100
±10
30
-
-
-
-
-
-
300
-
-
V
Ω
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
3
Test Conditions
I
S
=1.6A, V
GS
=0V
I
S
=1.6A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
340
2550
Max. Units
1.5
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25
o
C , V
DD
=50V , L=10mH , R
G
=25Ω , I
AS
=1.6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N70EJ-HF
2
2
T
C
=25 C
2
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
T
C
=150 C
2
o
10V
9.0V
8.0V
7.0V
V
G
=6.0V
2
1
V
G
=6.0V
1
1
1
0
0
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
2.0
I
D
=0.8A
V
G
=10V
Normalized BV
DSS
(V)
1.2
1.6
Normalized R
DS(ON)
1
1.2
0.8
0.8
0.6
-50
0
50
100
150
0.4
-50
0
50
100
150
Tj , Junction Temperature (
℃
)
T
j
, Junction Temperature (
℃
)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
5
T
j
=150 C
4
o
T
j
=25 C
1.1
o
3
Normalized V
GS(th)
(V)
1.0
I
S
(A)
2
0.9
1
0.8
0
0.2
0.4
0.6
0.8
1
1.2
0.7
-50
-25
0
25
50
75
100
125
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
℃
)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N70EJ-HF
f=1.0MHz
12
1000
I
D
=0.8A
10
V
GS
, Gate to Source Voltage (V)
8
C (pF)
V
DS
=560V
6
C
iss
100
4
C
oss
2
C
rss
10
0
4
8
12
16
20
24
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
1
0.2
I
D
(A)
0.1
1ms
0.1
0.1
0.05
T
C
=25
o
C
Single Pulse
0.01
10
100
10ms
100ms
DC
P
DM
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
c
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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