AP02N60I-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
650V
8Ω
2A
S
Description
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode
power supplies, AC-DC converters and high current high speed
switching circuits.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
5.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
201305094
AP02N60I-A-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
650
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
0.2
-
-
-
14
2
8.5
9.5
12
21
9
155
27
14
Max. Units
-
-
8
4
-
10
100
+100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=10V, I
D
=0.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, I
D
=1A
V
DS
=600V, V
GS
=0V
V
GS
= +30V, V
DS
=0V
I
D
=2A
V
DS
=480V
V
GS
=10V
V
DS
=300V
I
D
=2A
R
G
=10Ω,V
GS
=10V
R
D
=150Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25
o
C , V
DD
=50V , L=40mH , R
G
=25Ω , I
AS
=2A.
3.Pulse test
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
1
Min.
-
-
-
Typ.
-
-
-
Max. Units
2
3.6
1.5
A
A
V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
T
j
=25℃, I
S
=2A, V
GS
=0V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60I-A-HF
1.5
0.9
T
C
=25 C
I
D
, Drain Current (A)
o
10V
6.0V
5.5V
I
D
, Drain Current (A)
0.8
10V
T
C
=150 C
o
6.0V
5.5V
0.7
1.0
0.6
0.5
5.0V
0.4
0.5
5.0V
0.3
0.2
V
G
=4.5V
V
G
=4.5V
0.0
0
5
10
15
20
0.1
0.0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.2
2.8
V
G
=10V
I
D
=0.6A
1.1
2.4
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2.0
1.0
1.6
1.2
0.9
0.8
0.4
0.8
0.0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5.0
4.5
4.0
1
V
GS(th)
(V)
1.21
3.5
I
S
(A)
T
j
=150 C
o
T
j
=25 C
o
3.0
2.5
0.1
2.0
1.5
0.01
1.0
0.21
0.41
0.61
0.81
1.01
-50
0
50
100
150
0.01
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N60I-A-HF
f=1.0MHz
16
1000
I
D
=2A
V
GS
, Gate to Source Voltage (V)
12
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
C
iss
100
8
4
C
oss
C
rss
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
1
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
1.00
10us
1ms
10ms
0.2
I
D
(A)
0.1
0.1
0.05
P
DM
0.02
0.01
Single Pulse
0.10
100ms
o
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25 C
Single Pulse
0.01
1
10
100
1000
10000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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