SEMICONDUCTOR
RoHS
20T Series
RoHS
TRIACs, 20A
Sunbberless
FEATURES
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
Clip assembly
20T series are
UL
certified (File ref: E320098)
Packages are RoHS compliant
A1
A2
G
1
2
3
A2
TO-220AB
(non-Insulated)
(20TxxA)
TO-220AB
(lnsulated)
(20TxxAI)
APPLICATIONS
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
phase control and static switching on inductive or
resistive load.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
By using an internal ceramic pad, the 20T series
provides voltage insulated tab (rated at 2500V
RMS
)
complying with UL standards.
A2
A1 A2
G
1
2
G
TO-3P
(non-Insulated)
(20TxxB)
TO-3P
(Insulated)
(20TxxBI)
MAIN FEATURES
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
A2
VALUE
20
600 to 1000
35 to 50
UNIT
A
V
mA
A1 A2
G
TO-263
(D
2
PAK)
(20TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Peak gate power dissipation (tp = 20µs)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB/TO-3P
T
c
= 90ºC
20
TO-220AB insulated/TO-3P insulated T
c
= 70ºC
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
VALUE
UNIT
A
I
TSM
t = 20 ms
t = 16.7 ms
200
210
200
A
A
2
s
A/µs
A
W
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
T
j
=125ºC
50
4
10
1
- 40
to
+ 150
ºC
- 40
to
+ 125
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Page 1 of 5
SEMICONDUCTOR
RoHS
20T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
20Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 20 A/ms, T
j
= 125°C
MAX.
MIN.
MIN.
TEST CONDITIONS
QUADRANT
CW
I
-
II
-
III
V
D
= 12 V, R
L
= 33Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
40
50
60
250
11
1.5
0.2
60
70
80
500
18
mA
V/µs
A/ms
V
V
mA
MAX.
35
BW
50
Unit
mA
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 28 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
2.5
mA
MAX.
MAX.
MAX.
VALUE
1.55
1.04
20
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(AC)
S = 1 cm
2
VALUE
TO-220AB, TO-263, TO-3P
TO-220AB Insulated, TO-3P Insulated
TO-263
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
1.3
2.1
45
60
UNIT
°C/W
R
th(j-a)
Junction to ambient
S
=
Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
20TxxA-CW/ 20TxxAl-CW
20TxxA-BW/20TxxAl-BW
20TxxB-CW/20TxxBl-CW
20TxxB-BW/20TxxBl-BW
20TxxH -CW
20TxxH -BW
AI:
Insulated TO-220AB package
BI:
Insulated TO-3P package
V
V
V
V
V
V
800
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
35
mA
50
mA
35
mA
50
mA
35
mA
50
mA
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-3P
TO-3P
D
2
PAK
D
2
PAK
SENSITIVITY
TYPE
PACKAGE
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Page 2 of 5
SEMICONDUCTOR
RoHS
20T Series
RoHS
ORDERING INFORMATION
ORDERING TYPE
20TxxA-yy
20TxxAI-yy
20TxxB-yy
20TxxBI-yy
20TxxH-yy
MARKING
20TxxA-yy
20TxxAI-yy
20TxxB-yy
20TxxBI-yy
20TxxH-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-3P
TO-3P (insulated)
TO-263(D
2
PAK)
WEIGHT
2.0g
2.3g
4.3g
4.8g
2.0g
BASE Q,TY
50
50
30
30
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
ORDERING INFORMATION SCHEME
20 T 06
Current
20 = 20A
A - BW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
B
=
TO-3P (non-insulated)
BI = TO-3P (
insulated
)
H = TO-263 (D
2
PAK)
I
GT
Sensitivity
BW
= 50mA
Snubberless
CW
= 35mA
Snubberless
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
Fig.2 Correlation between maximun RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P
(W)
30
R
th =0
°C/W
P
(W)
30
25
α
=180°
T
case
(°C)
65
75
85
R
th =1.5
°C/W
R
th =1
°C/W
25
R
th =0.5
°C/W
20
15
α
=90°
α
=120°
20
15
180°
α
95
105
115
10
5
0
α
=30°
α
=60°
10
5
20
0
0
20
40
I
T(RMS)
(A)
0
5
10
15
α
T
amb
(°C)
125
60
80
100
120
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Page 3 of 5
SEMICONDUCTOR
RoHS
20T Series
RoHS
Fig.3 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
25
α
=180°
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th
/R
th
]
1
20
15
10
5
0
0
10
20
30 40
50
TO-220AB
TO-263
TO-3P
Z
th(j-c)
Z
th(j-a)
TO-220AB (insulated)
TO-3P ( insulated )
0.1
T
c
(°C)
60
70
80
90 100 110 120 130
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
I
1000
(A)
T
j
max.
V
to
= 1.04V
R
d
= 20Ωm
T
j
=T
j
max
I
TSM
(A)
1000
t=20ms
100
Non repetitive
T
j
initial=25°C
One cycle
10
T
j
=25°C
V
TM
(V)
1
1
2
3
4
5
Number of cycles
100
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
l
TSM
(A), l
2
t(A
2
s)
1000
T
j
initial=25°C
2.0
I
TSM
2.5
Fig.8 Relative variation of gate trigger current and
holding current versus junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
1.5
I
GT
I
2
t
1.0
I
H
&
I
L
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
0.0
-40 -30 -20 -10
0
T
j
(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
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Page 4 of 5
SEMICONDUCTOR
RoHS
20T Series
RoHS
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
TO-263(D
2
PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0
to
0.254 (0
to
0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
TO-3P
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Page 5 of 5
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