STS20NHS3LL
Table 3: Absolute Maximum ratings
Symbol
V
DS
V
GS
I
D(1)
I
D
I
DM
(2)
P
tot
Parameter
Drain-source Voltage (V
GS
= 0)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Value
30
± 18
20
12.6
80
2.7
Unit
V
V
A
A
A
W
Table 4: Thermal Data
Rthj-amb (3) Thermal Resistance Junction-ambient Max
T
j
Maximum Operating Junction Temperature
T
stg
Storage Temperature
47
-55 to 150
-55 to 150
°C/W
°C
°C
Table 5: Avalanche Characteristics
Symbol
I
AV
E
AS
Parameter
Not-Repetitive Avalanche Current
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25°C, I
D
= I
AV
, V
DD
= 24V)
Max Value
12.5
1.3
Unit
A
J
ELECTRICAL CHARACTERISTICS
(T
J
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 1mA, V
GS
= 0
V
DS
= 24V
V
GS
= ± 18V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
1
0.0032
0.004
Min.
30
500
±100
2.5
0.004
0.0055
Typ.
Max.
Unit
V
µA
nA
V
Ω
Ω
Table 7: Dynamic
Symbol
g
fs
(4)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
=15V, I
D
= 12A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
Min.
Typ.
30
3950
720
70
Max.
Unit
S
pF
pF
pF
2/9
STS20NHS3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 8: Switching On
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 15V, I
D
= 10A
R
G
= 4.7Ω , V
GS
= 4.5V
(see Figure 15)
V
DD
=15V, I
D
=20A
V
GS
= 4.5V
(see Figure 17)
Min.
Typ.
TBD
TBD
27.5
7.9
8.7
37
Max.
Unit
ns
ns
nC
nC
nC
Table 9: Switching Off
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
V
DD
= 15V, I
D
= 10A
R
G
= 4.7Ω
,
V
GS
= 4.5V
(see Figure 15)
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Table 10: Source Drain Diode
Symbol
I
SD
I
SDM
V
SD
(4)
t
rr
Q
rr
I
RRM
Notes:
1.
2.
3.
4.
This value is rated according to Rthj-pcb
Pulse width limited by safe operating area
When mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
<
10sec
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
Min.
Typ.
Max.
20
80
Unit
A
A
V
ns
nC
A
I
SD
= 10A ,V
GS
= 0
I
SD
= 10A, di/dt = 100A/µs
V
DD
= 25V, T
j
= 150°C
(see Figure 16)
0.7
26
25
1.9
3/9
STS20NHS3LL
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/9
STS20NHS3LL
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized BVDSS vs Temperature
Figure 11: Normalized On Resistance vs Tem-
perature
Figure 14: Source-Drain Diode Forward Char-
acteristics
5/9
STS20NHS3LL
Figure 15: Switching Times Test Circuit For
Resistive Load
Figure 17: Gate Charge Test Circuit
Figure 16: Test Circuit For Diode Recovery
Times
6/9
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