VS-20CTH03SPbF, VS-20CTH03-1PbF
Vishay High Power Products
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
VS-20CTH03SPbF
VS-20CTH03-1PbF
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
Base
common
cathode
2
Base
common
cathode
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
2
3
1
Common
Anode cathode Anode
2
3
1
Common
Anode cathode Anode
DESCRIPTION/APPLICATIONS
Vishay HPP’s 300 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(maximum)
I
F(AV)
V
R
35 ns
2 x 10 A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
300
10
20
120
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 10 A
I
F
= 10 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.05
0.85
-
6
30
8
MAX.
-
1.25
0.95
20
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94011
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-20CTH03SPbF, VS-20CTH03-1PbF
Vishay High Power Products
Hyperfast Rectifier,
2 x 10 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
31
42
2.4
5.6
36
120
MAX.
35
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per diode
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
- 65
-
-
-
6.0
(5.0)
TYP.
-
-
2.0
0.07
-
MAX.
175
1.5
-
-
12
(10)
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
20CTH03S
20CTH03-1
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94011
Revision: 11-Mar-10
VS-20CTH03SPbF, VS-20CTH03-1PbF
Hyperfast Rectifier,
2 x 10 A FRED Pt
®
100
100
T
J
= 175 °C
Vishay High Power Products
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
10
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 100 °C
0.1
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.01
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
100
150
200
250
300
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94011
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-20CTH03SPbF, VS-20CTH03-1PbF
Vishay High Power Products
180
Hyperfast Rectifier,
2 x 10 A FRED Pt
®
100
I
F
= 10 A
Allowable Case Temperature (°C)
170
DC
160
t
rr
(ns)
T
J
= 125 °C
T
J
= 25 °C
150
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
140
0
2
4
6
8
10
12
14
16
10
100
V
R
= 200 V
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
1000
I
F
= 10 A
Average Power Loss (W)
16
RMS limit
T
J
= 125 °C
100
T
J
= 25 °C
8
4
DC
0
0
2
4
6
8
10
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
12
14
16
Q
rr
(nC)
12
V
R
= 200 V
10
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94011
Revision: 11-Mar-10
VS-20CTH03SPbF, VS-20CTH03-1PbF
Hyperfast Rectifier,
2 x 10 A FRED Pt
®
V
R
= 200 V
Vishay High Power Products
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94011
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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