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SIT3521AE-2C230-3H1.000000: 产品描述LVDS Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN; 产品类别无源元件振荡器; 文件大小3MB，共47页; 制造商SiTime; 标准

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SIT3521AE-2C230-3H1.000000概述

LVDS Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN

SIT3521AE-2C230-3H1.000000规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SiTime
包装说明	LCC10,.12X.2,50/40
Reach Compliance Code	unknow
其他特性	COMPLEMENTARY OUTPUT
最长下降时间	0.47 ns
频率调整-机械	NO
频率稳定性	25%
JESD-609代码	e4
安装特点	SURFACE MOUNT
端子数量	10
标称工作频率	1 MHz
最高工作温度	105 °C
最低工作温度	-40 °C
振荡器类型	LVDS
输出负载	100 OHM, 2 pF
封装等效代码	LCC10,.12X.2,50/40
物理尺寸	5.0mm x 3.2mm x 0.9mm
最长上升时间	0.47 ns
最大供电电压	3.3 V
最小供电电压	2.7 V
标称供电电压	3 V
表面贴装	YES
最大对称度	55/45 %
端子面层	Nickel/Palladium/Gold (Ni/Pd/Au)

SIT3521AE-2C230-3H1.000000文档预览

SiT3521

Description

PRELIMINARY

1 to 340 MHz Elite Platform™ I

C/SPI Programmable Oscillator

Features



The

SiT3521

is an ultra-low jitter, user programmable

oscillator which offers the system designer great flexibility

and functionality.

The device supports two in-system programming options

after powering up at a default, factory programmed startup

frequency:



Any-frequency mode where the clock output can be re-

programmed to any frequency between 1 MHz and

340 MHz in 1 Hz steps

Digitally controlled oscillator (DCO) mode where the

clock output can be steered or pulled by up to

±3200

ppm with 5 to 94 ppt (parts per trillion) resolution.



The device’s default start-up frequency is specified in the

ordering code. User programming of the device is achieved

via I C or SPI. Up to 16 I C addresses can be specified by

the user either as a factory programmable option or via

hardware pins, enabling the device to share the I C with

other I C devices.

The SiT3521 utilizes SiTime’s unique DualMEMS™

temperature sensing and TurboCompensation™ technology

to deliver exceptional dynamic performance:



Programmable frequencies (factory or via I C/SPI)

from 1 MHz to 340 MHz

Digital frequency pulling (DCO) via I C/SPI



Output frequency pulling with perfect pull linearity



13 programmable pull range options to

±3200

ppm



Frequency pull resolution as low as 5 ppt (0.005 ppb)

0.21 ps typical integrated phase jitter (12 kHz to 20 MHz)

Integrated LDO for on-chip power supply noise filtering

0.02 ps/mV PSNR

-40°C to 105°C operating temperature

LVPECL, LVDS, or HCSL outputs



Programmable LVPECL, LVDS Swing



LVDS Common Mode Voltage Control

RoHS and REACH compliant, Pb-free, Halogen-free

and Antimony-free

Applications



Resistant to airflow and thermal shock

Resistant to shock and vibration

Superior power supply noise rejection

Combined with wide frequency range and user

programmability, this device is ideal for telecom, networking

and industrial applications that require a variety of

frequencies and operate in noisy environment.

Ethernet: 1/10/40/100/400 Gbps

G.fast and xDSL

Optical Transport: SONET/SDH, OTN

Clock and data recovery

Processor over-clocking

Low jitter clock generation

Server, storage, datacenter

Test and measurement

Broadcasting

Block Diagram

Package Pinout

(10-Lead QFN, 5.0 x 3.2 mm)

A/ K

SD C L

OE / NC

GND

VDD

OUT-

OUT+

A1 A0

/N /N

C/ C/

M SS

Figure 1. SiT3521 Block Diagram

Figure 2. Pin Assignments (Top view)

(Refer to

Table 14

for Pin Descriptions)

Rev 0.991

April 25, 2020

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Ordering Information

PRELIMINARY

SiT3521 AC -1C133 1 GG156.250000T

Part Family

“SiT3521”

12 mm Tape & Reel, 3ku reel

12 mm Tape & Reel, 1ku reel

[2]

Revision Letter

“A” is the revision of Silicon

Frequency

1.000000 to 340. 000000 MHz

Temperature Range

“C” : Extended Commercial, -20 to 70°C

“ I ” : Industrial, -40 to 85°C

“E” : Extended Industrial, -40 to 105°C

[1]

Signaling Type

“1”: LVPECL

“2”: LVDS

“4”: HCSL

DCXO Pull Range

“M”

“B”

“C”

“E”

“F”

“G”

“H”

“X”

“L”

“Y”

“S”

“Z”

“U”

± 25 ppm

± 50 ppm

± 80 ppm

±100 ppm

±125 ppm

±150 ppm

±200 ppm

±400 ppm

± 600 ppm

±800 ppm

±1200 ppm

±1600 ppm

±3200 ppm

Package Size

“C”: 5.0 x 3.2 mm

Frequency Stability/Grade

“F”: ±10 ppm

“1”: ±20 ppm

“2”: ±25 ppm

“3”: ±50 ppm

Serial IF mode

“S”

: SPI mode

[1]

“0-G”

: I

C mode (See below)

I C Factory Programmable Addresses

“0-F” : I C Address factory programmed

Sets Bits 3: 0 of Device I

C address to

the Hex value of the ordering code .

When the I C address is factory

programmed using these codes ,

pin A0, A1 are NC

“G”: I

C address controlled by A0, A1 pins

A1:A0

C Address

1100000

1100010

1101000

1101010 (default)

Voltage Supply

“25” :

“28” :

“30” :

“33” :

2.5V

2.8V

3.0V

3.3V

±10%

OE Pin Control

“-”: OE under software Control.

Pin 1 and 2 are both NC.

“1”: Pin 1 OE, Pin 2 NC

“2”: Pin 1 NC, Pin 2 OE

Notes:

1. -40 to 105°C option available only for I

C operation.

2. Bulk is available for sampling only.

Rev 0.991

Page 2 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

TABLE OF CONTENTS

PRELIMINARY

Description ................................................................................................................................................................................... 1

Features....................................................................................................................................................................................... 1

Applications ................................................................................................................................................................................. 1

Block Diagram ............................................................................................................................................................................. 1

Ordering Information .................................................................................................................................................................... 2

1 Electrical Characteristics ......................................................................................................................................................... 4

2 Device Configurations and Pin-outs ........................................................................................................................................ 9

3 Waveform Diagrams ............................................................................................................................................................. 11

4 Termination Diagrams ........................................................................................................................................................... 13

4.1. LVPECL .................................................................................................................................................................... 13

4.2. LVDS ........................................................................................................................................................................ 15

4.3. HCSL ........................................................................................................................................................................ 16

5 Test Circuit Diagrams ........................................................................................................................................................... 17

6 Architecture Overview ........................................................................................................................................................... 19

7 Functional Overview ............................................................................................................................................................. 19

7.1. User Programming Interface ..................................................................................................................................... 19

7.2. Start-up output frequency and signaling types .......................................................................................................... 19

7.3. In-system programmable options.............................................................................................................................. 19

8 In-system Programmable Functional Description.................................................................................................................. 20

8.1. Any-frequency function ............................................................................................................................................. 20

8.2. DCO Functional Description ..................................................................................................................................... 24

8.3. Pull Range, Absolute Pull Range .............................................................................................................................. 26

8.4. Software OE Functional Description ......................................................................................................................... 28

9 I C/SPI Control Registers...................................................................................................................................................... 29

9.1. Register Address: 0x00. DCO Frequency Control Least Significant Word (LSW) .................................................... 29

9.2. Register Address: 0x01. OE Control, DCO Frequency Control Most Significant Word (MSW) ................................. 30

9.3. Register Address: 0x02. DCO PULL RANGE CONTROL ........................................................................................ 31

9.4. Register Address: 0x03. Flac-N PLL Integer Value and Flac-N PLL Fraction MSW ................................................. 32

9.5. Register Address: 0x04. Flac-N PLL Fraction LSW .................................................................................................. 32

9.6. Register Address: 0x05. PostDiv, Driver Control ...................................................................................................... 33

9.7. Register Address: 0x06. mDriver, Driver Control ...................................................................................................... 34

10 I C Operation ........................................................................................................................................................................ 35

10.1. I C protocol ............................................................................................................................................................... 35

10.2. I C Timing Specification ............................................................................................................................................ 37

10.3. I C Device Address Modes ....................................................................................................................................... 38

11 SPI Operation ....................................................................................................................................................................... 39

Schematic Examples ................................................................................................................................................................. 42

Dimensions and Patterns ........................................................................................................................................................... 45

Additional Information ................................................................................................................................................................ 46

Revision History ......................................................................................................................................................................... 47

Rev 0.991

Page 3 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

1 Electrical Characteristics

PRELIMINARY

All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with

standard output terminations shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL

Parameter

Output Frequency Range

Frequency Stability

Symbol

F_stab

Min.

-10

-20

-25

-50

First Year Aging

Operating Temperature Range

F_1y

T_use

–

-20

-40

Supply Voltage

Vdd

2.97

2.7

2.52

2.25

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

Duty Cycle

Start-up Time

Output Enable/Disable Time –

Hardware control via OE pin

Output Enable/Disable Time –

Software control via I

C/SPI

VIH

VIL

Z_in

T_start

T_oe_hw

70%

–

Typ.

–

±1

–

3.3

3.0

2.8

2.5

–

100

–

Max.

340

+10

+20

+25

+50

–

+70

+85

+105

Supply Voltage

3.63

3.3

3.08

2.75

–

30%

–

3.0

3.8

Vdd

kΩ

µs

Measured from the time Vdd reaches its rated minimum value

Measured from the time OE pin reaches rated VIH and VIL to

the time clock pins reach 90% of swing and high-Z.

See

Figure 9

and

Figure 10

Measured from the time the last byte of command is

transmitted via I

C/SPI (reg1) to the time clock pins reach 90%

of swing and high-Z. See

Figure 30

and

Figure 31

OE pin

OE pin, logic high or logic low

Unit

MHz

ppm

°C

1 -year aging at 25°C

Extended Commercial

Industrial

Extended Industrial. Available only for I C operation, not SPI.

Condition

Factory or user programmable, accurate to 6 decimal places

Inclusive of initial tolerance, operating temperature, rated

power supply voltage and load variations.

Frequency Range

Frequency Stability

Temperature Range

Input Characteristics – OE Pin

Output Characteristics

Startup and Output Enable/Disable Timing

T_oe_sw

–

6.5

µs

Rev 0.991

Page 4 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Table 2. Electrical Characteristics – LVPECL Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

PRELIMINARY

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Maximum Output Current

Idd

I_OE

I_leak

I_driver

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Maximum average current drawn from OUT+ or OUT-

Output Characteristics

Output High Voltage

Output Low Voltage

Output Differential Voltage Swing

Rise/Fall Time

VOH

VOL

V_Swing

Tr, Tf

Vdd - 1.1V

Vdd - 1.9V

1.2

–

1.6

225

Vdd - 0.7V

Vdd - 1.5V

2.0

290

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[3]

Note:

3. Measured according to JESD65B.

T_jitt

–

0.225

0.1

0.225

0.11

0.340

0.14

0.340

0.15

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

See

Figure 5

See

Figure 5

See

Figure 6

20% to 80%, see

Figure 6

Table 3. Electrical Characteristics – LVDS Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Idd

I_OE

I_leak

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Output Characteristics

Differential Output Voltage

Delta VOD

Offset Voltage

Delta VOS

Rise/Fall Time

VOD

ΔVOD

VOS

ΔVOS

Tr, Tf

250

–

1.125

–

400

455

1.375

470

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[4]

Note:

4. Measured according to JESD65B.

T_jitt

–

0.21

0.1

0.21

0.1

0.275

0.12

0.367

0.12

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

f = 156.25MHz See

Figure 7

See

Figure 7

See

Figure 7

See

Figure 7

Measured with 2 pF capacitive loading to GND, 20% to 80%,

see

Figure 8

Rev 0.991

Page 5 of 47

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基于ARM920T的两种CAN总线扩展方式

1、引言随着工业控制系统逐步的自动化，现代化，现场总线控制系统得到越来越多的重视和应用，CAN总线是目前开发简单，性能价格比高的一种现场总线。相对其他现场总线而言，CAN通信控制器的生产厂家最多、品种最全、应用也最为广泛。基于现场总线控制系统智能化、复杂度的提高，作为现场总线的核心部件微处理器，传统的51芯片，甚至ARM7已经逐渐不能满足需要，ARM9成为合适的选择。但许多ARM9并没有集...[详细]
利用电子传感器测量测试的方法

　　1. 温度是什么？　　热是一种分子运动。物体越热，它的分子运动得越快，绝对零点的定义是，在这温度下一切分子运动都停止了。可是，我们既然不能看到分子在运动，我们怎样测量温度呢?美国全国标准和技术NIST所用的基本标准是根据理想气体定律，这定律表明，温度升高时，气体的压力或者体积必须按比例增加，此数字表示，P×V=KT，其中P=压力，V=体积，T=绝对温度，而K是个常数。在固定的体积中把分...[详细]
现场总线技术在邯钢高炉改造中的应用

邯钢4#高炉自1993年投产至今，外部设备严重老化，热风炉原有的PLC控制系统TDC3000也经常出现模板损坏和通讯中断事故，急需改造。考虑到热风炉设备较为分散，而现场总线技术正适合于这种分散的、具有通信接口的现场受控设备的系统，所以决定引入现场总线技术对热风炉进行改造。现场总线改造方案 1 现场总线现场总线的概念是随着微电子技术的发展，数字...[详细]
基于PROFIBUS的变频器在连铸切割机中的应用

1 引言济钢集团第三炼钢厂是济钢集团“十五”期间的重点投资项目，引进的是国内外一流的先进设备和自动化控制技术，其装备达到国内一流、国际先进水平。在转炉、连铸自动化控制体系中，根据现场总线的特点和系统的需要应用了多种总线（Profibus、ControlNet、Devicenet）构成的现场总线控制系统（FCS），这些总线控制系统给转炉、连铸系统提供了安全而可靠的解决方案。1#连铸...[详细]
智能手机本土硬件成本降至400元以下

来源：工信部电信研究院南都制图：刘寅杉　　在刚刚结束的2012年第二季度，中国已崛起为全球第一大智能手机市场。工信部电信研究院公布的今年上半年全国手机行业运行状况则显示，上半年智能机总体出货量达9485.5万部，占同期手机市场出货量的48.66%.国内智能机市场井喷背后，硬件成本的极速下降甚至超出了普通消费者的想象。特别是高通与联发科“联手”搅局低端智能机市场以来，今年二季度大量手机...[详细]
印度十大手机商出炉诺基亚三星领先

印度前十大手机供应商最新排名（数据来源：2012年Voice&Data 100 调查）　　C114讯北京时间7月10日下午消息(艾斯)根据国外媒体报道，2011-12财年，印度移动手机市场收入下降了5%，从上一财年的3303.1亿卢比跌至3121.5亿卢比。以收入份额计，印度前五大手机公司为：诺基亚、三星(微博)、Micromax、RIM和Karbonn。　　销售的下降是由于功能...[详细]

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