Datasheet> 器件分类 > 无源元件> 振荡器> SIT3521AC-1C230-9H1.000000

文档预览

SIT3521AC-1C230-9H1.000000: 产品描述LVPECL Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN; 产品类别无源元件振荡器; 文件大小3MB，共47页; 制造商SiTime; 标准

下载文档详细参数全文预览

SIT3521AC-1C230-9H1.000000概述

LVPECL Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN

SIT3521AC-1C230-9H1.000000规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SiTime
包装说明	LCC10,.12X.2,50/40
Reach Compliance Code	unknow
其他特性	COMPLEMENTARY OUTPUT
最长下降时间	0.29 ns
频率调整-机械	NO
频率稳定性	25%
JESD-609代码	e4
安装特点	SURFACE MOUNT
端子数量	10
标称工作频率	1 MHz
最高工作温度	70 °C
最低工作温度	-20 °C
振荡器类型	LVPECL
输出负载	50 OHM
封装等效代码	LCC10,.12X.2,50/40
物理尺寸	5.0mm x 3.2mm x 0.9mm
最长上升时间	0.29 ns
最大供电电压	3.3 V
最小供电电压	2.7 V
标称供电电压	3 V
表面贴装	YES
最大对称度	55/45 %
端子面层	Nickel/Palladium/Gold (Ni/Pd/Au)

SIT3521AC-1C230-9H1.000000文档预览

SiT3521

Description

PRELIMINARY

1 to 340 MHz Elite Platform™ I

C/SPI Programmable Oscillator

Features



The

SiT3521

is an ultra-low jitter, user programmable

oscillator which offers the system designer great flexibility

and functionality.

The device supports two in-system programming options

after powering up at a default, factory programmed startup

frequency:



Any-frequency mode where the clock output can be re-

programmed to any frequency between 1 MHz and

340 MHz in 1 Hz steps

Digitally controlled oscillator (DCO) mode where the

clock output can be steered or pulled by up to

±3200

ppm with 5 to 94 ppt (parts per trillion) resolution.



The device’s default start-up frequency is specified in the

ordering code. User programming of the device is achieved

via I C or SPI. Up to 16 I C addresses can be specified by

the user either as a factory programmable option or via

hardware pins, enabling the device to share the I C with

other I C devices.

The SiT3521 utilizes SiTime’s unique DualMEMS™

temperature sensing and TurboCompensation™ technology

to deliver exceptional dynamic performance:



Programmable frequencies (factory or via I C/SPI)

from 1 MHz to 340 MHz

Digital frequency pulling (DCO) via I C/SPI



Output frequency pulling with perfect pull linearity



13 programmable pull range options to

±3200

ppm



Frequency pull resolution as low as 5 ppt (0.005 ppb)

0.21 ps typical integrated phase jitter (12 kHz to 20 MHz)

Integrated LDO for on-chip power supply noise filtering

0.02 ps/mV PSNR

-40°C to 105°C operating temperature

LVPECL, LVDS, or HCSL outputs



Programmable LVPECL, LVDS Swing



LVDS Common Mode Voltage Control

RoHS and REACH compliant, Pb-free, Halogen-free

and Antimony-free

Applications



Resistant to airflow and thermal shock

Resistant to shock and vibration

Superior power supply noise rejection

Combined with wide frequency range and user

programmability, this device is ideal for telecom, networking

and industrial applications that require a variety of

frequencies and operate in noisy environment.

Ethernet: 1/10/40/100/400 Gbps

G.fast and xDSL

Optical Transport: SONET/SDH, OTN

Clock and data recovery

Processor over-clocking

Low jitter clock generation

Server, storage, datacenter

Test and measurement

Broadcasting

Block Diagram

Package Pinout

(10-Lead QFN, 5.0 x 3.2 mm)

A/ K

SD C L

OE / NC

GND

VDD

OUT-

OUT+

A1 A0

/N /N

C/ C/

M SS

Figure 1. SiT3521 Block Diagram

Figure 2. Pin Assignments (Top view)

(Refer to

Table 14

for Pin Descriptions)

Rev 0.991

April 25, 2020

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Ordering Information

PRELIMINARY

SiT3521 AC -1C133 1 GG156.250000T

Part Family

“SiT3521”

12 mm Tape & Reel, 3ku reel

12 mm Tape & Reel, 1ku reel

[2]

Revision Letter

“A” is the revision of Silicon

Frequency

1.000000 to 340. 000000 MHz

Temperature Range

“C” : Extended Commercial, -20 to 70°C

“ I ” : Industrial, -40 to 85°C

“E” : Extended Industrial, -40 to 105°C

[1]

Signaling Type

“1”: LVPECL

“2”: LVDS

“4”: HCSL

DCXO Pull Range

“M”

“B”

“C”

“E”

“F”

“G”

“H”

“X”

“L”

“Y”

“S”

“Z”

“U”

± 25 ppm

± 50 ppm

± 80 ppm

±100 ppm

±125 ppm

±150 ppm

±200 ppm

±400 ppm

± 600 ppm

±800 ppm

±1200 ppm

±1600 ppm

±3200 ppm

Package Size

“C”: 5.0 x 3.2 mm

Frequency Stability/Grade

“F”: ±10 ppm

“1”: ±20 ppm

“2”: ±25 ppm

“3”: ±50 ppm

Serial IF mode

“S”

: SPI mode

[1]

“0-G”

: I

C mode (See below)

I C Factory Programmable Addresses

“0-F” : I C Address factory programmed

Sets Bits 3: 0 of Device I

C address to

the Hex value of the ordering code .

When the I C address is factory

programmed using these codes ,

pin A0, A1 are NC

“G”: I

C address controlled by A0, A1 pins

A1:A0

C Address

1100000

1100010

1101000

1101010 (default)

Voltage Supply

“25” :

“28” :

“30” :

“33” :

2.5V

2.8V

3.0V

3.3V

±10%

OE Pin Control

“-”: OE under software Control.

Pin 1 and 2 are both NC.

“1”: Pin 1 OE, Pin 2 NC

“2”: Pin 1 NC, Pin 2 OE

Notes:

1. -40 to 105°C option available only for I

C operation.

2. Bulk is available for sampling only.

Rev 0.991

Page 2 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

TABLE OF CONTENTS

PRELIMINARY

Description ................................................................................................................................................................................... 1

Features....................................................................................................................................................................................... 1

Applications ................................................................................................................................................................................. 1

Block Diagram ............................................................................................................................................................................. 1

Ordering Information .................................................................................................................................................................... 2

1 Electrical Characteristics ......................................................................................................................................................... 4

2 Device Configurations and Pin-outs ........................................................................................................................................ 9

3 Waveform Diagrams ............................................................................................................................................................. 11

4 Termination Diagrams ........................................................................................................................................................... 13

4.1. LVPECL .................................................................................................................................................................... 13

4.2. LVDS ........................................................................................................................................................................ 15

4.3. HCSL ........................................................................................................................................................................ 16

5 Test Circuit Diagrams ........................................................................................................................................................... 17

6 Architecture Overview ........................................................................................................................................................... 19

7 Functional Overview ............................................................................................................................................................. 19

7.1. User Programming Interface ..................................................................................................................................... 19

7.2. Start-up output frequency and signaling types .......................................................................................................... 19

7.3. In-system programmable options.............................................................................................................................. 19

8 In-system Programmable Functional Description.................................................................................................................. 20

8.1. Any-frequency function ............................................................................................................................................. 20

8.2. DCO Functional Description ..................................................................................................................................... 24

8.3. Pull Range, Absolute Pull Range .............................................................................................................................. 26

8.4. Software OE Functional Description ......................................................................................................................... 28

9 I C/SPI Control Registers...................................................................................................................................................... 29

9.1. Register Address: 0x00. DCO Frequency Control Least Significant Word (LSW) .................................................... 29

9.2. Register Address: 0x01. OE Control, DCO Frequency Control Most Significant Word (MSW) ................................. 30

9.3. Register Address: 0x02. DCO PULL RANGE CONTROL ........................................................................................ 31

9.4. Register Address: 0x03. Flac-N PLL Integer Value and Flac-N PLL Fraction MSW ................................................. 32

9.5. Register Address: 0x04. Flac-N PLL Fraction LSW .................................................................................................. 32

9.6. Register Address: 0x05. PostDiv, Driver Control ...................................................................................................... 33

9.7. Register Address: 0x06. mDriver, Driver Control ...................................................................................................... 34

10 I C Operation ........................................................................................................................................................................ 35

10.1. I C protocol ............................................................................................................................................................... 35

10.2. I C Timing Specification ............................................................................................................................................ 37

10.3. I C Device Address Modes ....................................................................................................................................... 38

11 SPI Operation ....................................................................................................................................................................... 39

Schematic Examples ................................................................................................................................................................. 42

Dimensions and Patterns ........................................................................................................................................................... 45

Additional Information ................................................................................................................................................................ 46

Revision History ......................................................................................................................................................................... 47

Rev 0.991

Page 3 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

1 Electrical Characteristics

PRELIMINARY

All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with

standard output terminations shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL

Parameter

Output Frequency Range

Frequency Stability

Symbol

F_stab

Min.

-10

-20

-25

-50

First Year Aging

Operating Temperature Range

F_1y

T_use

–

-20

-40

Supply Voltage

Vdd

2.97

2.7

2.52

2.25

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

Duty Cycle

Start-up Time

Output Enable/Disable Time –

Hardware control via OE pin

Output Enable/Disable Time –

Software control via I

C/SPI

VIH

VIL

Z_in

T_start

T_oe_hw

70%

–

Typ.

–

±1

–

3.3

3.0

2.8

2.5

–

100

–

Max.

340

+10

+20

+25

+50

–

+70

+85

+105

Supply Voltage

3.63

3.3

3.08

2.75

–

30%

–

3.0

3.8

Vdd

kΩ

µs

Measured from the time Vdd reaches its rated minimum value

Measured from the time OE pin reaches rated VIH and VIL to

the time clock pins reach 90% of swing and high-Z.

See

Figure 9

and

Figure 10

Measured from the time the last byte of command is

transmitted via I

C/SPI (reg1) to the time clock pins reach 90%

of swing and high-Z. See

Figure 30

and

Figure 31

OE pin

OE pin, logic high or logic low

Unit

MHz

ppm

°C

1 -year aging at 25°C

Extended Commercial

Industrial

Extended Industrial. Available only for I C operation, not SPI.

Condition

Factory or user programmable, accurate to 6 decimal places

Inclusive of initial tolerance, operating temperature, rated

power supply voltage and load variations.

Frequency Range

Frequency Stability

Temperature Range

Input Characteristics – OE Pin

Output Characteristics

Startup and Output Enable/Disable Timing

T_oe_sw

–

6.5

µs

Rev 0.991

Page 4 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Table 2. Electrical Characteristics – LVPECL Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

PRELIMINARY

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Maximum Output Current

Idd

I_OE

I_leak

I_driver

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Maximum average current drawn from OUT+ or OUT-

Output Characteristics

Output High Voltage

Output Low Voltage

Output Differential Voltage Swing

Rise/Fall Time

VOH

VOL

V_Swing

Tr, Tf

Vdd - 1.1V

Vdd - 1.9V

1.2

–

1.6

225

Vdd - 0.7V

Vdd - 1.5V

2.0

290

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[3]

Note:

3. Measured according to JESD65B.

T_jitt

–

0.225

0.1

0.225

0.11

0.340

0.14

0.340

0.15

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

See

Figure 5

See

Figure 5

See

Figure 6

20% to 80%, see

Figure 6

Table 3. Electrical Characteristics – LVDS Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Idd

I_OE

I_leak

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Output Characteristics

Differential Output Voltage

Delta VOD

Offset Voltage

Delta VOS

Rise/Fall Time

VOD

ΔVOD

VOS

ΔVOS

Tr, Tf

250

–

1.125

–

400

455

1.375

470

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[4]

Note:

4. Measured according to JESD65B.

T_jitt

–

0.21

0.1

0.21

0.1

0.275

0.12

0.367

0.12

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

f = 156.25MHz See

Figure 7

See

Figure 7

See

Figure 7

See

Figure 7

Measured with 2 pF capacitive loading to GND, 20% to 80%,

see

Figure 8

Rev 0.991

Page 5 of 47

www.sitime.com

查看更多（仅显示前5页内容，查看全部内容请下载文档。）>

推荐资源

高分：用DDRAW显示，图片在移动过程中图片经常出现错位，还有白条？: 我用DDRAW显示一个黑色的背景图片，中间贴三个图片。然后我点一个图片后，图片自己从左向右慢慢移动，可是在这移动的过程中，有时这三个图片会整体发生错位，中间还出现一条白线，很快就没有了 ......; 阿神归来嵌入式系统

AB类输出缓冲器: AB类输出缓冲器...; linda_xia 模拟电子

（已出）打包4块新唐ARM Cortex M4、M0内核全新开发板，顺丰包邮: 本帖最后由 bjs1688 于 2015-4-12 13:58 编辑打包4块新唐ARM Cortex M4、M0内核全新开发板，顺丰包邮。 ...; bjs1688 淘e淘

320×240 TFT液晶的驱动和显示效果（附有源代码）: 液晶屏是320×240的，2.8寸TFT屏，可以用来做MP4,数码相册等。这次回老家过年抽空弄出来的，所有的数据线和控制线都是通过一块STM32的开发板引出，特别困难，还很难看，所以我现在在画转接板。 ......; 莫恩嵌入式系统

仿真器Debug错误原因及解决办法: 错误现象：在使用xds100v3仿真器调试tms320c6747处理器时，出现如下一堆错误。 C674X_0: Power Failure on Target CPU Error connecting to the target: (Error -1265 @ 0x0) Devic ......; Jacktang 微控制器 MCU

请问图中右上方两个电位器起什么作用？如何调节？: 请问图中两个电位器VR1，VR2起什么作用？怎么调节? 非常感谢！ ...; wuxanzi 模拟电子

乱象丛生的手机AI 新一轮话语权之争？

进入2018年后，人工智能开始成为旗舰手机的标配，也屡屡出现在发布会PPT上，几乎所有的手机厂商都在标榜自家的AI技术和服务。但这场手机AI热也出现了一些不太理性的声音，比如避重就轻、刻意夸大人工智能的软件能力，没有技术储备只单纯炒作人工智能概念来混淆是非。一种常见的说法是，人工智能时代的硬件将成为AI的附属。其实这是对手机AI的一种误解，AI在智能手机上的应用离不开三大推手，即数据、芯片...[详细]
汇顶科技2017年净利8.87亿元，屏幕指纹产品有望规模商用

4月26日，汇顶科技发布2017年年报，公司2017年1-12月实现营业收入36.82亿元，同比增长19.56%；归属于上市公司股东的净利润8.87亿元，同比增长3.52%，公司每股收益为1.95元。汇顶科技是一家基于芯片设计和软件开发的整体应用解决方案提供商，目前主要面向智能移动终端市场提供领先的人机交互和生物识别解决方案。公司正努力扩展技术研究领域和产品应用市场，将在移动终端、IoT和...[详细]
德国硅晶圆厂Siltronic预计2018年营收将达13亿欧元，年增10%

德国硅晶圆大厂Siltronic AG 4月25日公布2018年第1季(截至3月31日为止)财报：营收年增26.9%(季减0.2%)至3.274亿欧元；毛利率自1年前的23.0%升至38.1%；EBITDA(税前、息前、折旧摊提前盈余)年增131%至1.223亿欧元；EBITDA率报37.4%、优于一年前的20.5%以及2017年第4季的36.8%。 Siltronic指出，2017年第1季...[详细]
Q1中国智能手机市场重挫21%：苹果跌出前四,市场进一步集中

市场调研机构Canalys最新报告指出，2018年第一季度中国大陆的智能手机销售创下最大降幅。第一季度智能手机出货年率下降21%至9100万支，前十名厂商中，有八家销售出现下降。苹果的第四名地位遭到本土品牌小米取代。小米出货成长 37% 至 1200 万支，创下最大成长幅度。根据 Canalys 数据显示，2017 年第四季，苹果销售量犹小幅领先小米。冠军华为（包含华为荣耀）出货成长...[详细]
全新奥迪A8L上市_ASF与全铝的那些事儿

全新奥迪A8L压根儿就没有用全铝车身。全新奥迪A8L上市，各种宣传资料信息爆棚。然而你就算是逐字逐句地搜遍全网，也不可能找到“ASF”、“全铝车身”这样的字眼。要知道，这当初可算得上是奥迪A8的立身之本啊！为什么会这样？原因很简单：全新奥迪A8L压根儿就没有用全铝车身。关于ASF与全铝那些事儿很早就关注奥迪的人都知道ASF和全铝车身这些名词。上世纪九十年代，作为豪华级后来者的奥...[详细]
畅享电子制造产业盛宴 NEPCON China 上海展4月24日盛大启幕

在电子制造业领域影响力广泛的专业精品展会——第二十八届中国国际电子生产设备暨微电子工业展(NEPCON China 2018)于2018年4月24日在上海世博展览馆盛大开幕。作为行业久富盛誉的品质强展，NEPCON China 2018依托国内外电子制造领域前沿技术，全面覆盖SMT表面贴装、测试测量、焊接与点胶喷涂、电子新材料、智慧工厂等各环节革新设备、材料和系统集成方案，联手FUJI、P...[详细]
马云回应阿里收购中天微进军芯片领域：要研发普惠芯片

中兴被美国“制裁”，引发全民“中国芯”热情。4月20日，阿里巴巴集团宣布全资收购中国大陆唯一的自主嵌入式CPU IP Core公司——中天微系统有限公司。 “收购中天微是阿里巴巴芯片布局的重要一环。”阿里巴巴CTO张建锋表示，IP Core是基础芯片能力的核心，进入IP Core领域是中国芯片实现“自主可控”的基础。 4月25日，马云对话日本稻田大学时，谈到了收购中天微的初衷。马云表示...[详细]
台湾运营商大打4G价格战 NCC担忧影响5G发展

　　台湾省的 4G 价格战可能会损害其移动运营商投资和开发包括5G网络和应用在内的新业务的创新能力，这些业务是要维持电信业的长期发展。下面就随网络通信小编一起来了解一下相关内容吧。　　台北时报报道，NCC在市场领先者中华电信推出低成本、无限制的 4G 数据和语音计划后发布了警告。但是其竞争对手台湾移动、远传电信和亚太电信紧随其后做出了相应的行动。　　Taipai Times引用NCC...[详细]
韩国芯片巨头SK海力士Q1运营利润256亿元同比增77%

　　据ZDNet京时间4月24日报道，韩国芯片巨头 SK海力士今天公布了2018年第一季度财报。财报显示， SK海力士第一季度运营利润达4.3673万亿韩元(约合256.24亿元人民币)，较上年同期增长77%，创下该公司有史以来第二高记录。下面就随嵌入式小编一起来了解一下相关内容吧。　　当季，这家韩国第二大半导体厂商的净利润为3.1213万亿韩元(约合183.0亿元人民币)，营收达8...[详细]
5G标准的设定意味着什么？

　　这是 5G 发展进程中一个激动人心的里程碑。2017年12月，3G合作伙伴计划(3GPP)正式宣布 5G 新无线电(NR)的新标准，开启了 5G 网络全方位高性价比发展的新时代。已批准的标准包括对非独立5G的支持，这项支持使得目前提供 4G /LTE网络的运营商能够充分利用5G的性能优势，从而无论是在新频谱还是现有频谱中，都能够提供更大的容量和用户吞吐量。下面就随网络通信小编一起来了解一下相...[详细]
写在AMD锐龙2发布后：CPU生死战2.0时代将至

　　去年3月末， AMD 发布并上市了ZEN架构处理器，而其中面对消费级市场的“Ryzen”凭借优秀的表现以及较高的性价比，一经上市就抢占原本劣势的CPU市场; AMD 沉寂多年后反击的这一拳，确实打得疼!下面就随嵌入式小编一起来了解一下相关内容吧。　　1. intel 背后再一寒? 　　随后没过多久，Intel快速的发布了8代处理器，用“全民消费6核心”的理念迎击;然而上周， ...[详细]
马斯克承认过度自动化是错误：人类有时胜过机器

北京时间14日消息，特斯拉汽车公司创始人兼CEO马斯克一直大力推动汽车生产的自动化，但随着Model 3车型生产的不断滞后，他现在不得不承认，有时候人还是胜过机器的。马斯克当地时间周五发布推特称，“特斯拉工厂的过度自动化是个错误。确切地说，是我的错误。人类被低估了。” 特斯拉一直未能完成Model 3车型的生产目标。Model 3是特斯拉尝试大规模量产的首款车型，最终售价将降低至3.5万美元...[详细]
仿生工位：采用人工智能的人机协作

在工业变革中出现了新的要求，如产品生命周期缩短、但派生品种却大大增加。同时，确保员工能快速、直观地适应新工作，变得越来越重要。这就需要人、机械与软件之间实现新形式的协作。这里具有人工智能的自我学习系统与基于机器人的自动化解决方案发挥了重要作用。基于机器人的解决方案与人类操作员手把手协作，互相形成网络。仿生工位满足了所有这些要求 – Festo 在2018汉诺威工业博览会上展出突破性的工作环境。 ...[详细]
能检测心脏病的植入物获FDA批准

据悉，位于新泽西廷顿瀑布的Angel Medical Systems公司获得了美国食品及药物管理局对其AngelMed Guardian植入式设备的批准，该设备有助于在心脏病发之前检测到心脏病。该设备看起来像起一个搏器，它可以监测ST段的变化，这是局部缺血的心电图信号。当它检测到持续的ST段变化时，植入设备会将信号发送到一个外部装置，然后会告知患者立即就医。希望这种早期检测会避免许多心...[详细]
或6月量产！三星可折叠旗舰泄露：三屏内折叠设计！

三星和华为是为数不多的两家明确披露了可折叠手机计划的大厂，两者要踩的发布时间点也比较类似，今年底或者明年上半年。对于三星来说，自己做屏、做电池、做CMOS等，优势最为明显，当然，如果他们是处于确立行业标准、暴击iPhone这个角度的话，的确需要细细地打磨，需要在优秀的基础上做到极致，才能重拾更多用户的信任。据TheBell报道，接近三星的消息人士透露，其实早在CES 2018的闭门会...[详细]

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多