Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14
| 参数名称 | 属性值 |
| 厂商名称 | Semicoa |
| 包装说明 | IN-LINE, R-GDIP-T14 |
| Reach Compliance Code | unknow |
| 最大集电极电流 (IC) | 0.6 A |
| 集电极-发射极最大电压 | 60 V |
| 配置 | SEPARATE, 4 ELEMENTS |
| 最小直流电流增益 (hFE) | 50 |
| JESD-30 代码 | R-GDIP-T14 |
| 元件数量 | 4 |
| 端子数量 | 14 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | PNP |
| 参考标准 | MIL-19500; RH - 50K Rad(Si) |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |

| JANSL2N6987 | 2N6987 | JANSD2N6987 | JANSM2N6987 | JANSP2N6987 | JANSR2N6987 | JANTXVF2N6987 | |
|---|---|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 | Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 |
| 包装说明 | IN-LINE, R-GDIP-T14 | IN-LINE, R-CDIP-T14 | IN-LINE, R-GDIP-T14 | IN-LINE, R-GDIP-T14 | IN-LINE, R-GDIP-T14 | IN-LINE, R-GDIP-T14 | IN-LINE, R-GDIP-T14 |
| Reach Compliance Code | unknow | compliant | unknow | unknow | unknow | unknow | unknow |
| 最大集电极电流 (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
| 集电极-发射极最大电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| 配置 | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS | SEPARATE, 4 ELEMENTS |
| 最小直流电流增益 (hFE) | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| JESD-30 代码 | R-GDIP-T14 | R-CDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 | R-GDIP-T14 |
| 元件数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 14 | 14 | 14 | 14 | 14 | 14 | 14 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Semicoa | - | Semicoa | Semicoa | Semicoa | Semicoa | Semicoa |
| 参考标准 | MIL-19500; RH - 50K Rad(Si) | - | MIL-19500; RH - 10K Rad(Si) | MIL-19500; RH - 3K Rad(Si) | MIL-19500; RH - 30K Rad(Si) | MIL-19500; RH - 100K Rad(Si) | MIL-19500; RH - 300K Rad(Si) |
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