The documentation and process conversion measures
necessary to comply with this document shall be
completed by 28 April 2013.
INCH POUND
MIL-PRF-19500/317P
28 January 2013
SUPERSEDING
MIL-PRF-19500/317N
27 December 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,
TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB,
2N2369AUBC, 2N2369AUBCN 2N3227UB, 2N3227UBC, 2N3227UBCN, 2N4449U, 2N4449UA, 2N4449UB,
2N4449UBC, AND 2N4449UBCN, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR,
JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching
transistors (including dual devices). Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.
Provisions for radiation hardness assurance (RHA) to four radiation levels is provided for JANTXV, JANS, JANHC,
and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to
the device prefix to identify devices, which have passed RHA requirements.
* 1.2 Physical dimensions. See
figure 1
(TO-18) for 2N2369A and 2N3227,
figure 2
(TO-46) for 2N4449,
figure 3
(UB, UBC, and UBCN),
figure 4
(UA version),
figure 5
(U version dual devices), and figures 6 and 7 (JANC die).
*
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Types
P
T
T
A
=
+25°C
W
P
T
T
C
=
+125°C
W
0.36 (3)(4)
0.36 (3)(4)
0.36 (3)(4)
P
T
T
SP
=
+125°C (1)
W
0.36 (3)
0.36 (3)
0.36 (3)
V
CBO
V
EBO
V
CEO
V
CES
T
J
and
T
STG
°C
-65
to
+200
V dc
40
40
40
40
40
40
V dc
4.5
4.5
6.0
4.5
4.5
6.0
V dc
15
15
20
15
15
20
V dc
40
40
40
40
40
40
2N2369A, UA, UB, UBC, UBCN
2N4449, UA, UB, UBC, UBCN
2N3227, UA, UB, UBC, UBCN
2N2369AU
2N4449U
2N3227U
0.36 (2)
0.36 (2)
0.36 (2)
0.5 (5)
0.5 (5)
0.5 (5)
See notes at end of table.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/317P
*
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C. - Continued.
Types
R
θ
JA
°C/W
R
θ
JC
°C/W
150
150
150
R
θ
JSP
°C/W
2N2369A
2N4449
2N3227
2N2369AUA, UB, UBC, UBCN
2N4449UA, UB, UBC, UBCN
2N3227UA, UB, UBC, UBCN
2N2369AU
2N4449U
2N3227U
*
(1)
(2)
(3)
(4)
(5)
400
400
400
486
486
486
350 (6)
350 (6)
350 (6)
210
210
210
290 (7)
290 (7)
290 (7)
*
Applicable for UA, UB, UBC, UBCN and U packages.
For TO-18 and TO-46 packages derate linearly 2.06 mW/°C above T
A
=
+25°C.
Derate linerly 4.8 mW/°C above T
C
=+125°C. See figures 8, 9, 10, 11, and 12.
Power dissipation limited to 360 mW per chip regardless of thermal resistance.
For UA, UB, UBC, and UBCN packages mounted on FR-4 PCB (1 Oz. Cu) with contacts 20 mils larger than
package pads. See
figure 13.
(6) One side only, derate linerly 2.857 mW/°C above T
SP
= +25°C.
(7) Derate linearly 3.44 mW/°C above T
A
=
+54.5°C. See
figure 13.
1.4 Primary electrical characteristics. Unless otherwise specified, T
A
= +25°C.
Type
(1)
h
FE2
(2)
h
FE4
(2)
V
CE
= 0.4 V dc V
CE
= 1.0 V dc
I
C
= 30 mA dc I
C
= 100 mA dc
Min Max
2N2369A
2N3227
2N4449
30 120
40 250
30 120
Min Max
20
30
20
120
150
120
h
FE
V
CE
= 10 V dc
I
C
= 10 mA dc
f = 100 MHz
Min
Max
5.0
5.0
5.0
10
10
10
V
CE(sat)1
I
C
= 10 mA dc
I
B
= 1 mA dc
V dc Max
0.20
0.20
0.20
t
on
t
off
t
s
I
C
= 10 mA dc
I
C
= 10 mA dc I
C
= 10 mA dc
I
B1
= 3 mA dc
I
B1
= 3 mA dc
I
B1
= I
B2
=
I
B2
= -1.5 mA dc I
B2
= -1.5 mA dc
10 mA dc
ns
ns
ns
12
12
12
18
25
18
13
18
13
(1) Electrical characteristics for the A, AU, AUBC, U, UA, UB, and UBC suffix devices are identical to the
corresponding non-suffix device.
(2) Pulsed (see
4.5.1).
2
MIL-PRF-19500/317P
Ltr.
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Notes
6
7,8
7,8,13
7,8
7,8
7,8
5
5
3,4
3
10
6
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions TO-18 2N2369A and 2N3227.
3
MIL-PRF-19500/317P
Ltr.
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.065
.085
1.65
2.16
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
1.750
12.70 44.45
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.040
1.02
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Notes
TO-46
5
6
6
6
6
3
8
4
9
5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane
shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct
methods or by gauge.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
FIGURE 2. Physical dimensions - TO-46 (2N4449).
4
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
