The documentation and process conversion measures

necessary to comply with this document shall be

completed by 31 April 2011.

INCH-POUND

MIL-PRF-19500/453F

31 January 2011

SUPERSEDING

MIL-PRF-19500/453E

24 April 2006

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY

TYPE 2N5109 AND 2N5109UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC

JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier

transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two

levels of product assurance are provided for die. Provisions for radiation hardness assurance (RHA) to eight

radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”,

“R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 herein (similar to TO-39), figure 2 (2N5109UB) and figure 3

(JANHC2N5109, JANKC2N5109).

1.3 Maximum ratings. Unless otherwise specified, T

C

= +25°C.

P

T

(1)

T

A

= +25°C

W

1

P

T

(2)

T

C

= +25°C

W

2.9

V

CBO

V

CEO

I

C

V

EBO

T

STG

and

R

θJA

°C/W

175

R

θJC

°C/W

60

T

J

V dc

40

V dc

20

A dc

0.4

V dc

3.0

°C

-65 to +200

(1) Derate at 5.71 mW/°C above T

A

> +25°C.

(2) Derate at 16.6 mW/°C above T

C

> +25°C.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since

contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at

https://assist.daps.dla.mil

.

AMSC N/A

FSC 5961

MIL-PRF-19500/453F

Symbol

Inches

Min

CD

CH

HD

LC

LD

LL

LU

L

1

L

2

Q

TL

TW

r

α

.029

.028

.250

.050

.045

.034

.010

45° TP

0.74

0.71

.305

.240

.335

.190

.016

.500

.016

Max

.335

.260

.370

.210

.021

.750

.019

.050

6.35

1.27

1.14

0.86

0.25

45° TP

Dimensions

Millimeters

Min

7.75

6.10

8.51

4.83

0.41

12.70

0.41

Max

8.51

6.60

9.40

5.33

0.53

19.05

0.48

1.27

4

6

5

Notes

TO-39

P

.100

2.54

3

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. This zone is controlled for automatic handling. The variation in actual diameter within this zone

shall not exceed .010 inch (0.0254 mm).

4. (Three leads) LU applies between L1 and L2. LD applies between L

2

and .5 inch (12.70 mm) from

seating plane. Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.

5. Measured from maximum diameter of the actual device.

6. Details of outline in this zone optional.

7. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

FIGURE 1. Physical dimensions of transistor type 2N5109 (similar to TO-39).

2

MIL-PRF-19500/453F

UB

Symbol

Inches

Min

.046

.115

.085

Dimensions

Millimeters

Min

1.17

2.92

2.16

Max

1.42

3.25

2.74

3.25

2.74

0.96

0.89

Note

Symbol

Inches

Min

.036

.071

.016

Dimensions

Millimeters

Min

0.91

1.81

0.41

Max

1.02

2.01

0.61

.203

.305

.559

Note

BH

BL

BW

CL

CW

LL1

LL2

.022

.017

Max

.056

.128

.108

.128

.108

.038

.035

0.56

0.43

LS

1

LS

2

LW

r

r1

r2

Max

.040

.079

.024

.008

.012

.022

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas.

4. Lid material: Kovar.

5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

* 6. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

* FIGURE 2. Physical dimensions, surface mount (2N5109UB).

3

MIL-PRF-19500/453F

E

B

Die size:

Die thickness:

Base pad:

Emitter pad:

Back metal:

Top metal:

Back side:

Glassivation:

.016 x .020 inches (0.4064 x 0.508 mm).

.008 ±.0016 inches (0.2032 ±0.04064 mm).

.0028 x .0028 inches (0.07112 x 0.07112 mm).

Gold, 6500 ±1950 Ang

Aluminum, 17500 ±2500 Ang

Collector

SiO

2

, 7500 ±1500 Ang

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified tolerance is .00100 inch (0.0254 mm).

FIGURE 3. JANHC and JANKC (A-version) die dimensions.

4

MIL-PRF-19500/453F

1.4 Primary electrical characteristics (common to all types).

h

FE

V

CE

= 15 V dc

I

C

= 50 mA dc

V

CE(SAT)

I

C

= 100mA dc

I

B

= 10 mA dc

C

obo

I

E

= 0

100 kHz

≤

f

≤

1 MHz

V

CB

= 28 V dc

pF

3.5

6.0

11.0

h

FE



V

CE

= 15 V dc

I

C

= 50 mA dc

f = 200 MHz

Power gain

I

C

= 50 mA dc

f = 200 MHz

Pin = -10dB

V

CE

= 15 V dc

dB

11.0

Limits

V dc

Min

Max

40

150

0.5

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

-

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

-

Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at

https://assist.daps.dla.mil/quicksearch

or

https://assist.daps.dla.mil

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

5

参数名称	属性值
是否Rohs认证	符合
厂商名称	Semicoa
包装说明	,
Reach Compliance Code	compli
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
配置	Single
最小直流电流增益 (hFE)	40
极性/信道类型	NPN
最大功率耗散 (Abs)	2.5 W
表面贴装	NO
标称过渡频率 (fT)	1200 MHz

	JANHCA2N5109	JANKCA2N5109
描述	Transistor,	Transistor,
是否Rohs认证	符合	符合
厂商名称	Semicoa	Semicoa
Reach Compliance Code	compli	compli
ECCN代码	EAR99	EAR99
最大集电极电流 (IC)	0.5 A	0.5 A
配置	Single	Single
最小直流电流增益 (hFE)	40	40
极性/信道类型	NPN	NPN
最大功率耗散 (Abs)	2.5 W	2.5 W
表面贴装	NO	NO
标称过渡频率 (fT)	1200 MHz	1200 MHz

JANHCA2N5109

JANHCA2N5109概述

JANHCA2N5109规格参数

文档预览

JANHCA2N5109相似产品对比

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