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18TQ040SPBF

产品描述18 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB
产品类别分立半导体    二极管   
文件大小116KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

18TQ040SPBF概述

18 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB

18TQ040SPBF规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码D2PAK
包装说明R-PSSO-G2
针数4
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
应用HIGH POWER
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.53 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流1800 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流18 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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18TQ...SPbF
Vishay High Power Products
Schottky Rectifier, 18 A
FEATURES
Base
cathode
2
• 175 °C T
J
operation
Available
• Low forward voltage drop
• High frequency operation
RoHS*
COMPLIANT
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
1
D
2
PAK
N/C
3
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
PRODUCT SUMMARY
I
F(AV)
V
R
18 A
35 to 45 V
DESCRIPTION
The 18TQ... Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 µs sine
18 Apk, T
J
= 125 °C
Range
VALUES
18
35 to 45
1800
0.53
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
18TQ035SPbF
35
18TQ040SPbF
40
18TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 149 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
18
1800
A
390
24
3.6
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94150
Revision: 26-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

18TQ040SPBF相似产品对比

18TQ040SPBF SMBJ5381B 18TQSPBF
描述 18 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB Surface Mount Silicon Zener Diodes 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB

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