Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | SAMSUNG(三星) |
Reach Compliance Code | unknow |
最长访问时间 | 5.4 ns |
最大时钟频率 (fCLK) | 133 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G54 |
JESD-609代码 | e6 |
内存密度 | 134217728 bi |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 8 |
湿度敏感等级 | 3 |
端子数量 | 54 |
字数 | 16777216 words |
字数代码 | 16000000 |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 16MX8 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP |
封装等效代码 | TSOP54,.46,32 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
电源 | 3.3 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
连续突发长度 | 1,2,4,8,FP |
最大待机电流 | 0.002 A |
最大压摆率 | 0.2 mA |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Bismuth (Sn96Bi4) |
端子形式 | GULL WING |
端子节距 | 0.8 mm |
端子位置 | DUAL |
K4S280832I-UC75 | K4S281632I-UL75T | K4S280832I-UC75T | K4S280832I-TC75 | K4S280832I-TL75 | K4S280832I-UL75 | K4S281632I-UL75 | K4S281632I-TC60 | K4S281632I-UC60 | |
---|---|---|---|---|---|---|---|---|---|
描述 | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, |
Reach Compliance Code | unknow | unknown | unknown | compli | compli | compli | compliant | compliant | compliant |
最长访问时间 | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5 ns | 5 ns |
JESD-30 代码 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
内存密度 | 134217728 bi | 134217728 bit | 134217728 bit | 134217728 bi | 134217728 bi | 134217728 bi | 134217728 bit | 134217728 bit | 134217728 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 8 | 16 | 8 | 8 | 8 | 8 | 16 | 16 | 16 |
端子数量 | 54 | 54 | 54 | 54 | 54 | 54 | 54 | 54 | 54 |
字数 | 16777216 words | 8388608 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 8388608 words | 8388608 words | 8388608 words |
字数代码 | 16000000 | 8000000 | 16000000 | 16000000 | 16000000 | 16000000 | 8000000 | 8000000 | 8000000 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 16MX8 | 8MX16 | 16MX8 | 16MX8 | 16MX8 | 16MX8 | 8MX16 | 8MX16 | 8MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP | TSOP2 | TSOP2 | TSOP | TSOP | TSOP | TSOP | TSOP | TSOP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
是否Rohs认证 | 符合 | - | - | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 符合 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - | - | - |
最大时钟频率 (fCLK) | 133 MHz | - | - | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 166 MHz | 166 MHz |
I/O 类型 | COMMON | - | - | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 1,2,4,8 | - | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
输出特性 | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装等效代码 | TSOP54,.46,32 | - | - | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
电源 | 3.3 V | - | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
刷新周期 | 4096 | - | - | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
连续突发长度 | 1,2,4,8,FP | - | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | 0.002 A | - | - | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
最大压摆率 | 0.2 mA | - | - | 0.2 mA | 0.2 mA | 0.2 mA | 0.2 mA | 0.22 mA | 0.22 mA |
包装说明 | - | TSOP2, | TSOP2, | TSOP, TSOP54,.46,32 | TSOP, TSOP54,.46,32 | TSOP, TSOP54,.46,32 | TSOP, TSOP54,.46,32 | TSOP, TSOP54,.46,32 | TSOP, TSOP54,.46,32 |
ECCN代码 | - | EAR99 | EAR99 | - | - | - | EAR99 | EAR99 | EAR99 |
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