Radiation Hardened Ultra High Frequency NPN/PNP
Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation
Features
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
• Electrically screened to SMD #
5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
• NPN gain bandwidth product (F
T
) . . . . . . . . . . . . . . 8GHz (typ)
• NPN current gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
• NPN early voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
• PNP gain bandwidth product (F
T
). . . . . . . . . . . . . 5.5GHz (typ)
• PNP current gain (h
FE
). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
• PNP early voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
Related Literature
•
AN1503,
Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
•
TID REPORT
for the Radiation Hardened UHF NPN/PNP
transistor array
Applications
• High frequency amplifiers and mixers
• High frequency converters
• Synchronous detector
120
115
110
105
BETA
100
95
90
85
80
0
50
100
150
krad(Si)
200
250
300
BETA
75
70
65
60
55
50
45
40
0
50
100
150
krad(Si)
200
250
300
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
June 27, 2014
FN6475.4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Applications
+
V
CC
-
R
1
39kΩ
R
2
100Ω
R
3
39kΩ
R
4
100Ω
C
2
1nF
C
1
1nF
Q
5
R
S
50Ω
Q
2
C
3
1nF
V
O
R
L
50Ω
+
V
S
-
FIGURE 3. HIGH-GAIN, LOW-NOISE AMPLIFIER MADE FROM ISL73127
R
1
2kΩ
R
4
100Ω
+
-
V
EE
Q
5
Q
4
R
F
240Ω
L
1
1µH
V
O
R
L
50Ω
R
2
15kΩ
R
3
1kΩ
C
2
1nF
R
S
50Ω
C
1
1nF
Q
2
C
3
1nF
R
E
5.1Ω
+-
V
S
FIGURE 4. WIDEBAND AMPLIFIER MADE FROM ISL73096
Submit Document Feedback
2
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Ordering Information
ORDERING
SMD NUMBER
5962F0721804VXC
5962F0721801VXC
5962F0721801V9A
5962F0721804V9A
5962F0721805VXC
5962F0721802VXC
5962F0721802V9A
5962F0721805V9A
5962F0721806VXC
5962F0721803VXC
5962F0721803V9A
5962F0721806V9A
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
ISL73128RHF/PROTO
ISL73128RHX/SAMPLE
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
Ordering Information table must be used when ordering.
PART
NUMBER (Notes
1, 2)
ISL73096EHVF
ISL73096RHVF
ISL73096RHVX
ISL73096EHVX
ISL73127EHVF
ISL73127RHVF
ISL73127RHVX
ISL73127EHVX
ISL73128EHVF
ISL73128RHVF
ISL73128RHVX
ISL73128EHVX
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
ISL73128RHF/PROTO
ISL73128RHX/SAMPLE
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Pb-free)
16 Ld FLATPACK
16 Ld FLATPACK
DIE
DIE
16 Ld FLATPACK
16 Ld FLATPACK
DIE
DIE
16 Ld FLATPACK
16 Ld FLATPACK
DIE
DIE
16 Ld FLATPACK
DIE
16 Ld FLATPACK
DIE
16 Ld FLATPACK
DIE
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
PKG.
DWG. #
Submit Document Feedback
3
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Pin Configurations
ISL73096RH, ISL73096EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
Q
3
Q
2
Q
4
Q
1
Q
5
NC 16
15
14
13
12
11
10
9
1
2
3
4
Q
2
ISL73127RH, ISL73127EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
Q
1
16
15
14
13
12
11
Q
3
Q
4
10
9
Q
5
5 NC
6
7
8
ISL73128RH, ISL73128EH
(16 LD FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4
Q
2
Q
1
16
15
14
13
12
11
Q
3
Q
4
10
9
Q
5
5 NC
6
7
8
Pin Descriptions
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN NAME/DESCRIPTION
ISL73096RH, ISL73096EH
Q1 BASE
Q1 EMITTER
Q1 COLLECTOR
Q2 EMITTER
Q2 BASE
Q2 COLLECTOR
Q3 EMITTER
Q3 BASE
Q3 COLLECTOR
Q4 EMITTER
Q4 BASE
Q4 COLLECTOR
Q5 EMITTER
Q5 BASE
Q5 COLLECTOR
NC (No internal Connection)
PIN NAME/DESCRIPTION
ISL73127RH/ISL73128RH
ISL73127EH/ISL73128EH
Q1 COLLECTOR
Q2 COLLECTOR
Q2 EMITTER
Q2 BASE
NC (No internal Connection)
Q3 COLLECTOR
Q3 EMITTER
Q3 BASE
Q4 BASE
Q4 EMITTER
Q4 COLLECTOR
Q5 COLLECTOR
Q5 EMITTER
Q5 BASE
Q1 BASE
Q1 EMITTER
Submit Document Feedback
4
FN6475.4
June 27, 2014
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . . +8V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . . . -8V
Collector to Base Voltage (Open Emitter)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . +12V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . .-10V
Emitter to Base Voltage (Reverse Bias)
ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . +5.5V
ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . -4.5V
Collector Current at 100% Duty Cycle, at T
J
+175°C . . . . . . . . . . . .11.3mA
Power Dissipation (Pd), at T
A
+25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Power Dissipation (Pd), at T
A
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . 0.41W
Thermal Information
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
16 Ld FLATPACK Package(
Notes 3, 4)
. . .
120
28
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (T
JMAX
) . . . . . . . . . . . . . . . . . . . . .+175°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see
TB493
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
JC
, the “case temp” location is the center of the package underside.
Electrical Specifications
T
A
= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to
+125°C; across a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300 rad(Si)/s or over a total ionizing dose of 50krad(Si)
with exposure a low dose rate of <10mrad(Si)/s at +25°C.
SYMBOL
NPN PARAMETER
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
CE(SAT)
V
BE
h
FE
V
A
PNP PARAMETER
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
CE(SAT)
V
BE
h
FE
V
A
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
DC Forward Current Transfer Ratio
Early Voltage
I
C
= -100µA, I
E
= 0
I
C
= -100µA, I
B
= 0
I
C
= -100µA, base shorted to emitter
I
E
= -10µA, I
C
= 0
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA
I
C
= -10mA, V
CE
= -2V
I
C
= -1mA, V
CE
= -3.5V
40
20
10
V
10
8
10
4.5
0.5
0.95
1.05
V
V
V
V
V
V
V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
DC Forward Current Transfer Ratio
Early Voltage
I
C
= 100µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
C
= 100µA, base shorted to emitter
I
E
= 10µA, I
C
= 0
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA
I
C
= 10mA, V
CE
= 2V
I
C
= 1mA, V
CE
= 3.5V
80
40
20
V
12
8
10
5.5
0.5
0.95
1.05
V
V
V
V
V
V
V
DESCRIPTION
TEST CONDITIONS
MIN
(Note
5)
TYP
MAX
(Note
5)
UNITS
NOTE:
5. Compliance to data sheet limits is assured by one or more methods: production test, characterization and/or design.
Submit Document Feedback
5
FN6475.4
June 27, 2014
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
