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16CTQ100GTRR

产品描述8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小510KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
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16CTQ100GTRR概述

8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

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16CTQ...GSPbF/16CTQ...G-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 8 A
16CTQ...GSPbF
16CTQ...G-1PbF
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D PAK
2
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2x8A
60/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
8 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
16
60/100
650
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
16CTQ060GSPbF
16CTQ060G-1PbF
60
16CTQ080GSPbF
16CTQ080G-1PbF
80
16CTQ100GSPbF
16CTQ100G-1PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 148 °C, rectangular waveform
16
650
A
210
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
8
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94144
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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