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TH50VSF3680

产品描述SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
文件大小555KB,共55页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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TH50VSF3680概述

SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

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TH50VSF3680/3681AASB
TENTATIVE
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
DESCRIPTION
The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a
67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write
or Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB is
available in a 69-pin BGA package, making it suitable for a variety of design applications.
FEATURES
Power supply voltage
V
CCs
=
2.7 V~3.3 V
V
CCf
=
2.7 V~3.3 V
Data retention supply voltage
V
CCs
=
1.5 V~3.3 V
Current consumption
Operating: 45 mA maximum (CMOS level)
Standby: 10
µA
maximum (SRAM CMOS level)
Standby: 10
µA
maximum (FLASH)
Block erase architecture for flash memory
8
×
8 Kbytes
63
×
64 Kbytes
Organization
CIOF
V
CC
V
CC
V
SS
CIOS
V
CC
V
SS
V
SS
Flash Memory
4,194,304 words of 16 bits
4,194,304 words of 16 bits
8,388,608 words of 8 bits
SRAM
524,288 words of 16 bits
1,048,576 words of 8 bits
1,048,576 words of 8 bits
Function mode control for flash memory
Compatible with JEDEC-standard commands
Flash memory functions
Simultaneous Read/Write operations
Auto-Program
Auto Chip Erase, Auto Block Erase
Auto Multiple-Block Erase
Program Suspend/Resume
Block-Erase Suspend/Resume
Data Polling/Toggle Bit function
Block Protection/Boot Block Protection
Automatic Sleep, Hidden ROM Area Supports
Common Flash Memory Interface (CFI)
Byte/Word Mode
Erase and Program cycle for flash memory
10
5
cycles (typical)
Boot block architecture for flash memory
TH50VSF3680AASB: Top boot block
TH50VSF3681AASB: Bottom boot block
Package
P-FBGA69-1209-0.80A3: 0.31 g (typ.)
PIN ASSIGNMENT
(TOP VIEW)
Case: CIOF
=
V
CC
, CIOS
=
V
CC
(×16,
×16)
1
2
3
4
5
6
7
8
9
10
PIN NAMES
A0~A22
A12S
A12F
SA
DQ0~DQ15
CEF
OE
A15
A21
NC
A16
NC
NC
Address Inputs
A12 Input for SRAM
A12 Input for Flash Memory
A19 Input for SRAM
Data Inputs/Outputs
Chip Enable Input for Flash Memory
Output Enable Input
Write Enable Input
Data Byte Control Input
Ready/Busy Output
Hardware Reset Input
Write Protect/Program Acceleration Input
Word Enable Input for SRAM
Word Enable Input for Flash Memory
Power Supply for SRAM
Power Supply for Flash Memory
Ground
Not Connected
Don’t Use
000707EBA2
A
B
C
D
E
F
G
H
J
K
L
M
NC
NC
NC
A3
A2
NC
NC
A1
A0
CEF
CE1S
A7
A6
A5
A4
V
SS
OE
DQ0
DQ8
NC
NC
NC
NC
CE1S , CE2S Chip Enable Inputs for SRAM
LB
UB
A18
A17
DQ1
DQ9
DQ10
DQ2
WP/ACC
RESET
WE
CE2S
A20
A8
A19
A9
A10
DQ6
A11
A12
A13
A14
DU
WE
LB
, UB
RY/BY
RESET
WP/ACC
CIOS
CIOF
V
CCs
V
CCf
NC
NC
V
SS
NC
DU
RY/BY
DQ3
V
CCf
DQ11
DQ4
DQ13 DQ15 CIOF
DQ7
DQ14
V
SS
V
CCs
DQ12
CIOS
DQ5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-03-06 1/55

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描述 SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

 
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