SD1733 (TH513)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.
.
.
.
.
.
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
COMMON EMITTER
GOLD METALLIZATION
P
OUT
=
75 W MIN. WITH 14.0 dB GAIN
.380 4L STUD (M135)
epoxy sealed
ORDER CODE
SD1733
BRANDING
TH513
PIN CONNECTION
DESCRIPTION
The SD1733 is a 50 V Class AB epitaxial silicon
NPN planar transistor designed primarily for SSB
and VHF communications. This device utilizes
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
4. Emitter
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
110
55
4.0
3.25
127
+200
−
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance
2.0
°C/W
1/4
SD1733 (TH513)
ELECTRICAL SPECIFICATIONS
(T
case
=
25
°
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CES
BV
CEO
BV
EBO
h
FE
I
C
=
100mA
I
C
=
200mA
I
E
=
10mA
V
CE
=
6V
V
BE
=
0V
I
B
=
0mA
I
C
=
0mA
I
C
=
1.4A
110
55
4.0
19
—
—
—
—
—
—
—
50
V
V
V
—
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
G
P
*
IMD*
η
c*
C
OB
Note:
* f
1
f
=
30 MHz
P
OUT
=
75 W PEP
P
OUT
=
75 W PEP
P
OUT
=
75 W PEP
f
=
1 MHz
=
30.00 MHz, f
2
V
CE
=
50 V
V
CE
=
50 V
V
CE
=
50 V
V
CE
=
50 V
V
CB
=
50 V
75
14
—
37
—
—
—
—
—
—
—
—
−30
—
100
W
dB
dBc
%
pF
=
30. 001 MHz
2/4
SD1733 (TH513)
TEST CIRCUIT
C1
C2
C3, C4
C5
C6
C7
C9
C10
C11
:
:
:
:
:
:
:
:
:
20 - 500pF
50 - 500pF
3.9nF
100nF
2.2
µ
F
56pF
100pF
20 - 150pF
20 - 500pF
L1
L2
L3
L4
L5
R2
R3
: 3 Turns, Diameter Wire 1.5mm, Int. Diameter 7mm,
Pitch 2.5mm
: 22
µ
H Choke Coil
: 4 Turns, Diameter Wire 1.5mm, Int. Diameter 10mm,
Pitch 2.5mm
: Ferroxcube Choke Coil
: 7 Turns, Diameter Wire 1.5mm, Int. Diameter 12mm,
Pitch 2.5mm
: 33
Ω
: 4.7
Ω
BIAS CIRCUIT
3/4
SD1733 (TH513)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0135
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
4/4
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