MPSA12
MPSA12
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
20
20
10
1.2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Parameter
Test Condition
I
C
= 100µA, I
E
= 0
V
CB
= 15V, I
E
= 0
V
CB
= 15V, I
C
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA
I
C
= 10mA, I
B
= 0.01mA
I
C
= 10mA, V
CE
= 5.0V
20,000
1.0
1.4
V
V
Min.
20
100
100
100
Typ.
Max.
Units
V
nA
nA
nA
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
On Characteristics *
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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Advance Information
Product Status
Formative or In
Design
First Production
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This datasheet contains the design specifications for
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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