T H AT
Corporation
FEATURES
·
4 Matched NPN Transistors (300)
4 Matched PNP Transistors (320)
2 Matched NPNs and PNPs (340)
4 Matched NP6N - 4 Matched PNP (380)
Monolithic Construction
Low Noise
- 0.75
nV Hz
(
PNP
)
- 0.8
nV Hz
(
NPN
)
High Speed
- f
T
= 350 MHz (NPN)
- f
T
= 325 MHz (PNP)
Excellent Matching – 500
mV
typical
between devices of same gender
Dielectrically Isolated
36V V
CEO
Low-Noise Matched Transistor Array ICs
THAT 300 Series
APPLICATIONS
·
·
·
·
·
·
Microphone Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
Servos
·
·
·
·
·
·
DESCRIPTION
The THAT300 Series ICs are large-geometry
monolithic NPN and/or PNP transistor arrays which
combine low noise, high speed and excellent para-
metric matching between devices of the same gender.
The large geometries typically result in 25
W
base
spreading resistance for the PNP devices (30
W
for
the NPNs), producing 0.75
nV Hz
voltage noise
(0.8
nV Hz
for the NPNs). This makes the 300
Series an ideal choice for low-noise amplifier input
stages.
Fabricated on a Complementary Bipolar Dielec-
trically Isolated process, each transistor is electri-
cally isolated from the others by a layer of insulating
oxide. The resulting low collector-to-substrate capac-
itance produces a typical NPN f
T
of 350 MHz,
325 MHz for the PNPs. This delivers ac performance
similar to discrete 2N3904- and 2N3906-class de-
vices. Dielectric isolation also minimizes crosstalk
and provides complete DC isolation.
Substrate biasing is not required for normal op-
eration, though the substrate should be grounded to
optimize speed and minimize inter-device crosstalk.
The monolithic construction assures excellent pa-
rameter matching and tracking over temperature.
Part Number
THAT300P
Configuration
4-Matched NPN Transistors
Package
DIP14
SO14
DIP14
THAT300S
THAT320P
4- Matched PNP Transistors
THAT320S
THAT340P
THAT340S
THAT380G
2 Matched NPN Transistors and
2 Matched PNP Transistors
4 Matched NPN Transistors and
4 Matched PNP Transistors
Table 1. Ordering Info
SO14
DIP14
SO14
Individual Die
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Page 2
THAT300 Series Transistor Arrays
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25°C)
Parameter
NPN Collector-Emitter Voltage
NPN Collector-Base Voltage
NPN Emitter-Base Voltage
NPN Collector Current
NPN Emitter Current
PNP Collector-Emitter Voltage
PNP Collector-Base Voltage
PNP Emitter-Base Voltage
PNP Collector Current
PNP Emitter Current
Collector-Collector Voltage
Emitter-Emitter Voltage
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature
Symbol
BV
CEO
BV
CBO
BV
EBO
I
C MAX
I
E MAX
BV
CEO
BV
CBO
BV
EBO
I
C MAX
I
E MAX
BV
CC
BV
EE
T
A
T
JMAX
T
STORE
-45
I
C
= 1 mAdc, I
B
= 0
I
C
= 10
mAdc,
I
E
= 0
I
E
= 100
mAdc,
I
C
= 0
Conditions
I
C
= 1 mAdc, I
B
= 0
I
C
=10
mAdc,
I
E
=0
I
E
= 100
mAdc,
I
C
= 0
Min
36
36
5
10
10
–36
–36
–5
–10
–10
±100
±100
0
Typ
40
40
—
20
20
–40
–40
—
–20
–20
±200
±200
—
—
70
150
125
—
—
—
Max
—
—
—
Units
V
V
V
mA
mA
V
V
V
mA
mA
V
V
°C
°C
°C
THAT 300
1
2
3
4
5
6
7
SUB
SUB
14
13
12
11
10
9
8
1
2
3
4
5
6
7
THAT 320
14
13
12
SUB
SUB
11
10
9
8
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
Fig 1. 300 Pinout
Fig 2. 320 Pinout
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
600041 Rev B
Page 3
SPECIFICATIONS
1
(Cont’d)
THAT 340
1
2
3
4
5
6
7
SUB
SUB
14
13
12
11
10
9
8
Q7
E
Q3
B
Q3
E
GKH YK
Q1
E
Q3
C
Q1
B
Q1
C
Q2
C
Q2
B
Q4
C
Q2
E
Q1
Q2
Q1
PNP
Q3
NPN
Q5
NPN
Q7
PNP
Q5
C
Q7
B
Q7
C
Q2
PNP
Q4
NPN
Q6
NPN
Q8
PNP
17C1
18B
Q4
B
Q4
E
THAT
312
Q5
E
Q5
B
Q6
E
Q6
B
Q6
C
Q8
B
Q8
E
Q3
Q4
Q8
C
Fig 3. 340 Pinout
Fig 4. 380 Die layout
NPN Electrical Characteristics
2
Parameter
NPN Current Gain
Symbol
h
fe
Conditions
V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
NPN Current Gain Matching
NPN Noise Voltage Density
NPN Gain-Bandwidth Product
Dh
fe
e
N
f
T
V
CB
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
I
C
= 1 mA, V
CB
= 10 V
—
—
60
100
100
5
0.8
350
—
—
—
—
nV
%
Hz
Min
Typ
Max
Units
MHz
NPN
DV
BE
(THAT300: V
BE1
-V
BE2 ;
V
BE3
-V
BE4
) (THAT340: V
BE1
-V
BE2
)
V
OS
I
C
= 1 mA
I
C
= 10
mA
NPN
DI
B
(THAT300: I
B1
-I
B2,
I
B3
-I
B4
) (THAT340: I
B1
-V
B2
)
I
OS
I
C
= 1 mA
I
C
= 10
mA
NPN Collector-Base Leakage Current I
CBO
NPN Bulk Resistance
NPN Base Spreading Resistance
NPN Collector Saturation Voltage
NPN Output Capacitance
r
BE
r
bb
V
CE(SAT)
C
OB
V
CB
= 25 V
V
CB
= 0 V, 10
mA
< I
C
<
10 mA
V
CB
= 10 V, I
C
= 1 mA
I
C
= 1 mA, I
B
= 100mA
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
—
—
—
—
—
—
±500
±5
25
2
30
0.05
3
—
—
—
±1500
nA
nA
pA
W
W
V
pF
—
—
±0.5
±0.5
±3
mV
mV
NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)
V
CC
= 0 V, 100 kHz
C
CC
0.7
pF
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25°C.
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Page 4
THAT300 Series Transistor Arrays
SPECIFICATIONS
1
(Cont’d)
PNP Electrical Characteristics
2
Parameter
PNP Current Gain
Symbol
h
fe
Conditions
V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
PNP Current Gain Matching
PNP Noise Voltage Density
PNP Gain-Bandwidth Product
Dh
fe
e
N
f
T
V
CB
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
I
C
= 1 mA, V
CB
= 10 V
—
—
Min
Typ
Max
Units
50
75
75
5
0.75
325
—
—
—
—
nV
%
Hz
MHz
PNP
DV
BE
(THAT320: V
BE1
-V
BE2;
V
BE3
-V
BE4
) (THAT340: V
BE3
-V
BE4
)
V
OS
I
C
= 1 mA
I
C
= 10
mA
PNP
DI
B
(THAT320: I
B1
-I
B2;
I
B3
-I
B4
) (THAT340: I
B3
-I
B4
)
I
OS
I
C
= 1 mA
I
C
= 10
mA
PNP Collector-Base
Leakage Current
PNP Bulk Resistance
PNP Base Spreading Resistance
PNP Collector Saturation Voltage
PNP Output Capacitance
—
—
±700
±7
±1800
nA
nA
—
—
±0.5
±0.5
±3
mV
mV
I
CBO
r
BE
r
bb
V
CE(SAT)
C
OB
V
CB
= 25 V
V
CB
= 0 V, 10mA < I
C
< 10 mA
V
CB
= 10 V, I
C
= 1 mA
I
C
= 1 mA, I
B
= 100
mA
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
—
—
—
—
–25
2
25
–0.05
3
—
—
—
pA
W
W
V
pF
PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-
sumed by THAT Corporation for it’s use nor for any infringements of patents or other rights of third parties which may
result from it’s use.
LIFE SUPPORT POLICY
THAT Corporation products are not designed for use in life support equipment where malfunction of such products
can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer’s own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.
CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.
It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-
ages can accumulate and discharge without detection causing a loss of function or performance to occur.
The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-
sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.
Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-
tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
600041 Rev B
Page 5
0.750±0.004
(19.05±0.10)
0.050
(1.27)
Typ
0.25±.004
(6.35±0.10)
1
0.060
(1.52)
Typ.
0.30 ±0.02
(7.62 ±0.5)
0.125±0.004
(3.18±0.10)
0.157 0.245
(3.99) (6.2)
Max Max
1
0.018 (0.46)
Max
0.344 (8.74)
Max
0.069
(1.75)
Max
0.018
(0.46)
0.10 Typ.
(2.54)
0.075
(1.91)
0.010
(0.25)
0.010
(0.25)
Max
Note:
q
JA = 100 °C / W
Note:
q
JA = 100 °C / W
Figure 5. Dual-In-Line Package Outline
Figure 6. Surface-Mount Package Outline
1613u
-477.5
-286.5
-411.5
286.5
THAT
312
477.5
411.5
-95.5
95.5
0
668.5
477.5
286.5
17C1
18B
95.5
0
-95.5
-286.5
-477.5
-668.5
90u
90u
Figure 7. Die dimensions
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
GKH YK
1232u
微控制器 MCU
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