®
THBT7011D
DUAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
Application Specific Discretes
A.S.D.™
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
PEAK PULSE CURRENT :
I
PP
= 30A for 10/1000µs surge.
HOLDING CURRENT :
I
H
= 150mA.
BREAKDOWN VOLTAGE: 70V Min.
LOW DYNAMIC BREAKOVER VOLTAGE.
SO-8
DESCRIPTION
Dedicated to telecommunication equipment
protection,this device provides a dual bidirectional
protectionfunction.
Dynamic characteristics have been defined for
several types of surges, in order to meet the SLIC
maximum ratings.
FUNCTIONAL DIAGRAM
T
R
G
PINOUT CONFIGURATION
T
NC
NC
R
TM: ASD is trademarks of STMicroelectronics.
G
G
G
G
January 1999 - Ed: 5C
1/8
THBT7011D
COMPLIES WITH THE
FOLLOWING STANDARDS:
CCITT K20
VDE0433
VDE0878
IEC-1000-4-5
FCC Part 68, lightning surge
type A
FCC Part 68, lightning surge
type B
BELLCORE TR-NWT-001089
First level
BELLCORE TR-NWT-001089
Second level
CNET l31-24
Peak Surge
Voltage
(V)
4000
4000
4000
level 4
level 4
1500
800
100
2500
1000
5000
4000
Voltage
Waveform
(
µ
s)
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
9/720
2/10
10/1000
2/10
0.5/700
Current
Waveform
(
µ
s)
5/310
5/310
1/20
5/310
8/20
10/160
10/560
5/320
2/10
10/1000
2/10
0.8/310
Admissible
Ipp
(A)
25
40
50
25
50
47
35
25
90
30
90
25
Necessary
Resistor
(
Ω
)
-
10
-
-
-
25
15.5
-
23
24
50
-
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
I
PP
I
TSM
T
stg
T
j
T
L
Parameter
Peak pulse current (see note 1)
Non repetitive surge peak on-state current
(F=50Hz)
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s
10/1000
µs
tp = 100 ms
t = 1s
Value
30
15.5
9
- 40 to + 150
+ 150
260
Unit
A
A
°C
°C
°C
Note 1 : Pulse waveform :
10/1000
µ
s t
r
=10
µ
s
% I
PP
100
t
p
=1000
µ
s
30
25
20
15
10
Itsm ( A )
F=50Hz
Tj initial=+25°C
50
0
t
r
t
p
t
5
0
50
t ( ms )
100
200
500
1 000
2 000
2/8
THBT7011D
TEST CIRCUITS FOR I
PP
Transversal mode
TIP or
RING
I
See test
circuit 3
PP
RP
THBT
GND
THERMAL RESISTANCES
Symbol
R
th (j-a)
Junction to ambient
Parameter
Value
170
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Parameter
Stand-offvoltage
Leakage current at stand-off voltage
Continuous Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
I
BO
I
H
I
R
I
PP
I
V
V
RM
V
R
V
V
BO
BR
STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND
Type
I
RM
@ V
RM
max.
µ
A
V
I
R
@ V
R
max.
note 1
µ
A
V
V
BO
@
max.
note 2
V
I
BO
max.
mA
I
H
min
note 3
mA
C
max
note 4
pF
min.
mA
THBT7011D
5
66
50
70
89
50
400
150
80
3/8
THBT7011D
STATIC PARAMETERS BETWEEN TIP AND RING
Type
max.
µ
A
I
RM
@ V
RM
note 6
V
I
R
@ V
R
max.
µ
A
C
note 6
V
max
note 4
pF
THBT7011D
Note 1:
Note 2:
Note 3:
Note 4:
Note 5 :
Note 6:
5
132
50
140
40
I
R
measured at V
R
guarantees V
BR
> V
R
Measured at 50 Hz (1 cycle) test circuit 1.
See the reference test circuit 2.
V
R
= 1V, F = 1MHz.
See test circuit 3 for V
BO
dynamic parameters; R
p
is the protection resistor located on the line card.
Ground not connected or |V
TIP
| = |V
RING
| versus Ground
DYNAMIC BREAKOVER VOLTAGES (Transversal mode)
Type
THBT7011D
Symbol
V
BO
Test conditions
(see note 5)
10/700µs
1.2/50µs
2/10µs
1.5kV
1.5kV
2.5kV
R
p
=10Ω
R
p
=10Ω
R
p
=62Ω
I
PP
=30A
I
PP
=30A
I
PP
=38A
Maximum
90
95
150
Unit
V
TEST CIRCUIT 1 for I
BO
and V
BO
parameters:
tp = 20ms
Auto
Transformer
220V/2A
static
relay.
K
R1
140
R2
240
220V
Vout
IBO
measure
Transformer
220V/800V
5A
D.U.T
V BO
measure
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT
Selection
- Device with V
BO
<
200 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
Ω.
- Device with V
BO
≥
200 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
Ω.
4/8
THBT7011D
TEST CIRCUIT 2 for I
H
parameter.
R
D.U.T.
- V
P
V
BAT
= - 48 V
Surge generator
This is a GO-NOGO test which allows to confirm the holding current (I
H
) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
µs.
3) The D.U.T will come back off-state within 50 ms max.
TEST CIRCUIT 3 for I
PP
and V
BO
parameters :
R
4
(V
P
is defined in no load condition)
TIP
R
2
R ING
R
3
R
1
L
V
P
C
1
C
2
G ND
Pulse (
µ
s)
t
r
10
1.2
2
t
p
700
50
10
V
p
(V)
1500
1500
2500
C
1
(µF)
20
1
10
C
2
(nF)
200
33
0
L
(µH)
0
0
1.1
R
1
(Ω)
50
76
1.3
R
2
(Ω)
15
13
0
R
3
(Ω)
25
25
3
R
4
(Ω)
25
25
3
I
PP
(A)
30
30
38
R
p
(Ω)
10
10
62
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