^Eini-donduatoi ^Products., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general-purpose amplifier and low-speed switching applications.
•
•
•
High DC Current Gain —
h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage
Multiplication
Choice of Packages —
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
MJE700,T
MJE702
MJE703
NPN
MJE800,T
MJE802
MJE803
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
PNP
MAXIMUM RATINGS
MJE702
MJE703
MJE802
MJE803
80
80
5.0
4.0
0.1
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Symbol
MJE700.T
MJE800J
60
60
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCB
VEB
IG
IB
PD
TJ, T
stg
CASE 77
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 77
TO-220
50
TO-220
50
0.40
40
0.32
Watts
W/°C
°C
-55to+150
Symbol
Rejc
Max
3.13
2.50
Unit
°C/W
TO-225AA TYPE
MJE700-703
MJE800-803
40
TO-220AB-
g
30
TO-126
a
cc
20
10
CASE 221A-06
TO-220AB
MJE700T
MJE800T
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Quality Semi-Conductors
MJE700.T MJE702 MJE703 MJE80O.T MJE802 MJE803
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1 )
OC = 50 mAdc, IB = 0)
Collector Cutoff Current
MJE700.T, MJE800.T
MJE702, MJE703, MJE802, MJE803
V
(BR)CEO
Symbol
|
Min
Max
Unit
60
80
Vdc
—
(VCE = 60 vdc, IB = o)
(VCE = so vdc, IB = o)
Emitter Cutoff Current (VBE = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (1)
(l
c
= 1 .5 Adc, VCE =
3
-0
vdc
)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage (1)
(IC = 1 .5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base-Emitter On Voltage (1)
(IC = 1 .5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE =
3
-°
Vdc
)
DYNAMIC CHARACTERISTICS
MJETOOJ, MJESOO.T
MjE/oa, MJETOS, MJE802, MJESOS
!CEO
uAdc
—
—
Collector Cutoff Current (VCB = Rated BVcEQ.
!
E
=
°)
(V
CB
= Rated BV
CEO
, IE = 0, T
C
= 100°C)
ICBO
IEBO
hFE
100
100
100
500
2.0
uAdc
mAdc
—
750
750
100
MJE700.T, MJE702, MJE800.T, MJE802
MJE703, MJE803
All devices
VcE(sat)
MJE700.T, MJE702, MJE800.T, MJE802
MJE703, MJE803
All devices
v
BE(on)
—
Vdc
—
2.5
2.8
3.0
Vdc
2.5
2.5
3.0
MJE700J, MJE702, MJE800,T, MJE802
MJE703, MJE803
AN
devices
—
Small-Signal Current Gain (lc = 1.5 Adc, VCE
= 3
-°
Vdc
'
f
-
1
-°
MHz
)
(1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
hfe
1.0
嵌入式系统
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