1N957B, -1 thru 1N992B, -1, e3 DO-35
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The popular 1N957B thru 1N992B series of 0.5 watt Zener Voltage
Regulators provides a selection from 6.8 to 200 volts in standard 5% or
10% tolerances as well as tighter tolerances identified by different suffix
letters on the part number. These glass axial-leaded DO-35 Zeners are
also optionally available with an internal-metallurgical-bond option by
adding a “-1” suffix as well as RoHS Compliant by adding an “e3” suffix.
Microsemi also offers numerous other Zener products to meet higher and
lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-35
(DO-204AH)
FEATURES
•
JEDEC registered 1N957B(-1) to 1N992B(-1) series
•
Internal metallurgical bond option available by adding a
“-1” suffix (similar to military product)
•
Surface Mount equivalents available as MLL957B to
MLL992B or with “-1” suffix for bonded in the DO-213AA
MELF style package (consult factory for others)
•
RoHS Compliant devices available by adding “e3” suffix
•
DO-7 glass body axial-leaded Zener equivalents are also
available
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating
current and temperature range
Extensive selection from 6.8 to 200 V
Standard voltage tolerances are plus/minus 5%
with B suffix, 10 % with A suffix identification
Tight tolerances available in plus or minus 2%
or 1% with C or D suffix respectively
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Minimal capacitance (see Figure 3)
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
•
Operating and Storage temperature: -65
º
C to +175
º
C
•
Thermal Resistance: 250
º
C/W junction to lead at 3/8
(10 mm) lead length from body, or 310
º
C/W junction to
ambient when mounted on FR4 PC board (1 oz Cu)
2
with 4 mm copper pads and track width 1 mm, length
25 mm
o
•
Steady-State Power: 0.5 watts at T
L
< 50 C 3/8 inch
º
(10 mm) from body or 0.48 W at T
A
< 25 C when
mounted on FR4 PC board as described for thermal
resistance above (also see Figure1)
•
Forward voltage @200 mA: 1.1 volts (maximum) for
1N957B – 1N985B and 1.3 V for 1N985 – 1N992B
•
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
•
•
CASE: Hermetically sealed axial-lead glass
DO-35 (DO-204AH) package
TERMINALS: Tin-Lead (Sn/Pb) or RoHS
Compliant annealed matte-Tin plating solderable
per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. Diode
to be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Part number
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
WEIGHT: 0.2 grams
See package dimensions on last page
•
•
•
•
•
1N957B – 992B, e3
(DO-35)
DO-35)
Copyright
©
2005
10-18-2005 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N957B, -1 thru 1N992B, -1, e3 DO-35
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS* @ 25
o
C
JEDEC
TYPE
NUMBER
(Note 1)
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
1N983B
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
NOMINAL
ZENER
VOLTAGE
(Note 2)
ZENER
TEST
CURRENT
MAX. ZENER IMPEDANCE
(Note 3)
MAX. DC
ZENER
CURRENT
(Note 4)
MAX. SURGE
CURRENT
(Note 5)
MAX. REVERSE
LEAKAGE
CURRENT
I
R
@
V
R
μA
VOLTS
150
5.2
75
5.7
50
6.2
25
6.9
10
7.6
5
8.4
5
9.1
5
9.9
5
11.4
5
12.2
5
13.7
5
15.2
5
16.7
5
18.2
5
20.6
5
22.8
5
25.1
5
27.4
5
29.7
5
32.7
5
35.8
5
38.8
5
42.6
5
47.1
5
51.7
5
56.0
5
62.2
5
69.2
5
76.0
5
83.6
5
91.2
5
98.8
5
114.0
5
121.6
5
136.8
5
152.0
MAX. TEMP.
COEFFICIENT
WWW .
Microsemi
.C
OM
V
Z
VOLTS
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
I
ZT
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.0
1.8
1.7
1.5
1.4
1.3
1.1
1.0
0.95
0.85
0.80
0.68
0.65
Z
ZT
@ I
ZT
OHMS
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13.0
16
17
21
25
29
33
41
49
58
70
80
93
105
125
150
185
230
270
330
400
500
750
900
1100
1500
1700
2200
2500
Z
ZK
OHMS
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7100
8000
@ I
ZK
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
I
ZM
mA
55
50
45
41
38
32
31
28
25
24
20
18
16
15
13
12
11
10
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
4.1
3.7
3.3
3.1
2.7
2.4
2.2
2.0
1.8
I
ZSM
mA
300
275
250
225
200
175
160
150
130
120
110
100
90
80
70
65
60
55
46
44
40
37
35
30
28
26
23
21
18
16
15
13
12
11
10
9
α
VZ
%/
o
C
+0.05
+0.058
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.083
+0.085
+0.086
+0.087
+0.088
+0.090
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.098
+0.098
+0.099
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
* JEDEC Registered Data
NOTE 1:
The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2:
Zener voltage (
V
Z
) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a
o
temperature of 25 +8/ -2 C.
NOTE 3:
The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I
ZT
or
I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4:
The values of
I
ZM
are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
voltage above V
ZT
which results from zener impedance and the increase in junction temperature as power dissipation approaches
o
400 mW. In the case of individual diodes I
ZM
is that value of current which results in a dissipation of 400 mW at 75 C lead
temperature at 3/8” from body.
NOTE 5:
The surge for I
ZSM
is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
1N957B – 992B, e3
(DO-35)
Copyright
©
2005
10-18-2005 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N957B, -1 thru 1N992B, -1, e3 DO-35
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
GRAPHS
WWW .
Microsemi
.C
OM
TEMPERATURE COEFFICIENT %/ C
RATED POWER DISSIPATION - mW
TEMPERATURE COEFFICIENT mV/ C
o
Voltage Temperature
o
Coefficient %/ C
mV Change /ºC
o
T
L
– LEAD TEMPERATURE ( C) 3/8” FROM BODY or
T
A
on FR4 PC BOARD
o
NOMINAL ZENER VOLTAGE (VOLTS)
FIGURE 1
POWER DERATING CURVE
FIGURE 2
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
PACKAGE DIMENSIONS
1N957B – 992B, e3
(DO-35)
DO-35)
All dimensions in: INCH
mm
FIGURE 3
CAPACITANCE vs. ZENER VOLTAGE
(TYPICAL)
Copyright
©
2005
10-18-2005 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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